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    TRANSISTOR 2SC373 Search Results

    TRANSISTOR 2SC373 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC3739(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC3732-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC3731-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC3739(0)-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC3733-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation

    TRANSISTOR 2SC373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1714

    Abstract: marking ok 2SA1460 2SC3736
    Text: DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC3736 is designed for power amplifier and high speed 4.5 ±0.1 switching applications. 1.6 ±0.2 1.5 ±0.1


    Original     		PDF 2SC3736 2SC3736 2SA1460 D1714 marking ok

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC3731 2SA1458 300ns 1S955 1S955 2SC3731

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC3731 2SA1458 300ns 1S955 1S955 2SC3731

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC3731 2SA1458 300ns 1S955 1S955 2SC3731

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC3731 2SA1458 300ns 1S955 1S955 2SC3731

    2SC3735

    Abstract: hFE CLASSIFICATION Marking B35 2SA1462 b35 sc-59
    Text: DATA SHEET SILICON TRANSISTOR 2SC3735 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR <R> FEATURES PACKAGE DRAWING Unit: mm • High-speed switching 2.8±0.2 +0.1 0.4 –0.05 • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance


    Original     		PDF 2SC3735 2SC3735 hFE CLASSIFICATION Marking B35 2SA1462 b35 sc-59

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SA1458 2SC3731 PW300ns 1S955 1S955 2SA1458

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SA1458 2SC3731 PW300ns 1S955 1S955 2SA1458

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SA1458 2SC3731 PW300ns 1S955 1S955 2SA1458

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SA1458 2SC3731 PW300ns 1S955 1S955 2SA1458

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


    Original     		PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099

    2SC3736

    Abstract: 2SA1460 IEI-1213 MEI-1202 MF-1134 nec marking power amplifier marking HFF
    Text: DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3736 is designed for power amplifier and high speed switching applications. in millim eters FEATURES • High speed, high voltage switching.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: / NEC ELECTRON DEVICE SILICON TRANSISTOR / 2SC3734 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed: t stfl < 200 rts • C om plem entary to 2SA1461 ABSOLUTE M AXIM UM RATINGS


    OCR Scan     		PDF 2SA1461 2SC3734 10to2D

    MARKING B24

    Abstract: 2SA1461 2SC3734 Marking B23 vqb 201
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC3734 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters 2.8 ±0.2 • High Speed: t stg < 200 ns • Complementary to 2SA1461 0.65 ±8:3 1.5 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2SA1461 VCC-30V J22686 MARKING B24 2SA1461 2SC3734 Marking B23 vqb 201

    lkt 108

    Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 10-1BI= 10-1B2 2SC3735 NECTOKJ22686 lkt 108 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34

    ge330

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC3739 HIGH FREQUENCY AMPLIFIER AND SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim e te rs • High G ain B a ndw idth P rodu ct: f-f- = 200 M H z M IN . • C om plem entary to 2S A 1464


    OCR Scan     		PDF 2SC3739 ge330

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S


    OCR Scan     		PDF 2SA1608 2SC3739

    2SC3735

    Abstract: No abstract text available
    Text: SEC ELECTRONDEVICE / / SILICON TRANSISTOR J 2SC3735 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in m illim e te rs • High Speed: t on < 12 ns to ff< 1 8 n s 2 . 8 ± 0.2 0 -6 5 i g U ABSOLUTE M A XIM U M RATINGS


    OCR Scan     		PDF 2SC3735 2SC3735

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR 2SC3736 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP TIO N PACK AG E D IM E N S IO N S The 2SC3736 is designed fo r pow er a m p lifie r and high speed s w itch ing appiications.


    OCR Scan     		PDF 2SC3736 2SC3736

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SA1463

    Abstract: 2SC3736 MEI-1202 MF-1134
    Text: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES


    OCR Scan     		PDF 2SA1463 2SA1463 2SC3736 MEI-1202 MF-1134

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1462 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in millimaters • High Speed Switching : \on =9.0 m TYP. toff = 19.0 ns TYP. • High fr : *t “ 1 800 MHz TYP. • LowCob :Cob = 2 .0pFTYP.


    OCR Scan     		PDF 2SA1462 2SC3735

    2SC3735

    Abstract: No abstract text available
    Text: NEC ELECTRON DEVICE / / SILICON TRANSISTOR - _ _ _ . _ _ 2S A 1462 HIGH SPEED SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2 - 8 ± Q -2 _ :_ 1.5 om t E3 -b i • High Speed Switching : t o n ^9 .0 n s TYP.


    OCR Scan     		PDF 2SC3735 2SC3735