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    TRANSISTOR 2SD2005 Search Results

    TRANSISTOR 2SD2005 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD2005 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD2005

    Abstract: 1FS transistor TRANSISTOR C 369 transistor 2sD2005
    Text: 2SD2005 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high collector power dissipation: Pc = 1.2 W suitable for use at low voltage because transistor has a low saturation voltage, typically V CE(sat) = 0.15 V at lc/lB = 500 mA/50 mA


    OCR Scan     		2SD2005 2SB1329 2SD2005 1FS transistor TRANSISTOR C 369 transistor 2sD2005 PDF

    2SB1329

    Abstract: 2SD2005
    Text: 2SB1329 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high power, Pc = 1.2 W • low collector saturation voltage, typically VCE(sat) = -0.2 V at Iq/I b = -500 mA/-50 mA • complementary pair with 2SD2005 2SB1329 (MRT)


    OCR Scan     		2SB1329 A/-50 2SD2005 2SB1329 PDF

    2SB1329

    Abstract: 2SD2005
    Text: h"7 > V $ /Transistors 2SD 2005 • 2SD2005 Xt : $ * ' > NPN y 'J =l > N7 > V Epitaxial Planar NPN Silicon Transistor 4» «*IM M !/M ecllu m Power Amp. /Dimensions Unit : mm « * 1) P C = 1 .2 W 2 ) V C E ( s a t ) * ''' ïiŒ K li/F ^ i i b r t ' 5 0


    OCR Scan     		2SD2005 500mA/50mA) 2SB1329 2SB1329. 2SB1329 2SD2005 PDF

    2SC1740 transistor

    Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
    Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN


    OCR Scan     		2SC2021LN 2SB821 2SB1276 2SC2021MLN O-92L O-92LS 2SB737 V2SD786 2SA1137 2SC1740 2SC1740 transistor A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819 PDF

    C2021M

    Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
    Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)


    OCR Scan     		2SC2021LJNE) 2SB821 2SA937ALN \2SC2021LN 2SB1276 2021M 2SA937AM 2SB737 2SD786 2SA1137 C2021M B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240 PDF

    2SB1328

    Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
    Text: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.


    OCR Scan     		O-92L T0-92LS O-92L O-92LS O-92L. T0-92LS 2SA1819 2SB1328 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306 PDF

    2SD2008

    Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
    Text: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application


    OCR Scan     		O-92L T0-92LS O-92L O-92LS O-92L. O-92LS 2SA1819 2SD2008 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331 PDF

    2SA1482

    Abstract: 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374
    Text: _ . . • Transistors 7028*^ DQQ7M31 TbT ■ R H M T0-92L •T0-92LS •MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (Ta=25*C )


    OCR Scan     		DQQ7M31 T0-92L T0-92LS O-92L O-92LS O-92L. O-92L O-92LS T0-92L 2SA1482 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374 PDF

    2SB1333

    Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
    Text: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.


    OCR Scan     		O-92L T0-92LS O-92L O-92LS O-92L. 2SA1819 2SB1333 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482 PDF

    2SB1482

    Abstract: 2SC4722 2sa1820 2SD2172
    Text: Transistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. P a ckage A pplication TO-92L TO-92LS MRT Part No.


    OCR Scan     		O-92L O-92LS O-92L O-92LS O-92L. -92LS 5k10k 2SB1482 2SC4722 2sa1820 2SD2172 PDF

    2SB1329

    Abstract: 2SD2005 C12W 2sb1329r
    Text: h7 /T ransistors 2SB1329 I T frz f PNP '> •;= !> Epitaxial Planar PNP Silicon Transistor & * -f "j 3- > *3/Medium Power Amp. & Switching 2SB1329 • • il- J fi'Ì ììE l/ D im e n s io n s Unit : mm $ £ 1) PC= 1.2W 2) VcE(sat) * ’ •(& < h b 1 y


    OCR Scan     		2SB1329 2SB1329 2SD2005 --500mA/--50mA) 2SD2005. 2SD2005 C12W 2sb1329r PDF

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337 PDF