2SJ380
Abstract: No abstract text available
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 4 V Gate Drive
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2SJ380
2SJ380
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2SJ380
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ380 SILICON P CHANNEL MOS TYPE L2-7T-MOS V SEM ICONDUCTOR TO SH IBA TECHNICAL DATA (2SJ380) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE
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2SJ380
2SJ380)
0-15il
--60V)
20kfi)
2SJ380
--25V,
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2SJ380
Abstract: transistor 2sj380
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ380 SILICON P CHANNEL MOS TYPE L2-7T-MOS V SEM ICONDUCTOR TO SH IBA TECHNICAL DATA (2SJ380) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE
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2SJ380
2SJ380)
--60V)
20kfl)
2SJ380
transistor 2sj380
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance
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2SJ380
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2SJ380
Abstract: No abstract text available
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r ^ 3 .2 ± 0.2
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2SJ380
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 . 03.2 ± 0.2
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2SJ380
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2SJ380
Abstract: 015IL
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r <v> 4V Gate Drive Low Drain-Source ON Resistance
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2SJ380
015IL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 3.2 ± 0 .2 4V Gate Drive Low Drain-Source ON Resistance l° 2 .7 ± 0 .2 3.0 )
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2SJ380
--60V)
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ380 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 ^ 3 .2 i 0 .2
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2SJ380
20kf2)
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J380
Abstract: transistor j380 2SJ380
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
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2SJ380
J380
transistor j380
2SJ380
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transistor j380
Abstract: 2SJ380 J380
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
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2SJ380
transistor j380
2SJ380
J380
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J380
Abstract: transistor j380 2SJ380
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
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2SJ380
J380
transistor j380
2SJ380
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TS251
Abstract: 2SJ380
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate D rive Low Drain-Source ON Resistance : R ß S (O N ) = 0.15 O (Typ.) High Forward Transfer Adm ittance : |Yfs| = 7.7 S (Typ.)
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2SJ380
TS251
2SJ380
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Untitled
Abstract: No abstract text available
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
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2SJ380
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Untitled
Abstract: No abstract text available
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm • 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) · High forward transfer admittance: |Yfs| = 7.7 S (typ.)
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2SJ380
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt- M O S V 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SJ380
--100/iA
--60V)
20kf2)
--12A,
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004O
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
*45F122
GT30f124
*30g122
*30f124
IGBT GT30F124
GT30J124
GT45F122
GT30F123
TPCA*8023
GT50N322
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004O
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
GT45F122
TK13A60U
GT30F123
2SK4207
GT30J124
IGBT GT30F123
gt30f122
GT30G122
2SC5471
IGBT GT30J124
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