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    TRANSISTOR 2T Search Results

    TRANSISTOR 2T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2tk transistor

    Abstract: No abstract text available
    Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4403K MMBT4403K OT-23 2tk transistor

    2T marking

    Abstract: No abstract text available
    Text: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBT4403 MMBT4401 2N4403. OT-23 MMBT4403 MMBT4403-GS18 MMBT4403-GS08 D-74025 24-May-04 2T marking

    2T marking

    Abstract: No abstract text available
    Text: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBT4403 MMBT4401 2N4403. OT-23 MMBT4403 MMBT4403-GS18 MMBT4403-GS08 D-74025 24-May-04 2T marking

    MMBT4403

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 MMBT4403 -100A -100A, -150mA -150mA, -15mA 150mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 MMBT4403 -150mA -150mA, -15mA 150mA, -20mA

    MARKING SMD PNP TRANSISTOR 2t

    Abstract: 2T SMD TRANSISTOR TRANSISTOR SMD 2t sot23 CMBT4403
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT4403 C-120 MARKING SMD PNP TRANSISTOR 2t 2T SMD TRANSISTOR TRANSISTOR SMD 2t sot23 CMBT4403

    smd transistor 2T

    Abstract: 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT4403 C-120 smd transistor 2T 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403

    smd marking cb SOT23 transistor

    Abstract: MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT4403 C-120 smd marking cb SOT23 transistor MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01

    Marking br sot23 Transistor

    Abstract: MMBT4403 2T sot-23 sot23 2t marking pc sot-23 transistor BR SOT23 MMBT4403 2T transistor 2T Transistor 2 a sot23 sot 23 transistor
    Text: MMBT4403 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Switching transistor MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT4403 OT-23 OT-23 MMBT4403 -100A -100A, -150mA -150mA, -15mA 150mA, Marking br sot23 Transistor 2T sot-23 sot23 2t marking pc sot-23 transistor BR SOT23 MMBT4403 2T transistor 2T Transistor 2 a sot23 sot 23 transistor

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T


    Original     		PDF OT-23 CMBT4403 C-120

    2tk transistor

    Abstract: MMBT4403K 2TK
    Text: MMBT4403K tm PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT4403K MMBT4403K OT-23 2tk transistor MMBT4403K 2TK

    2tk transistor

    Abstract: MMBT4403K 2TK PNP Epitaxial Silicon Transistor sot-23 MMBT4403K 32TK
    Text: MMBT4403K tm PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT4403K OT-23 MMBT4403K 2tk transistor MMBT4403K 2TK PNP Epitaxial Silicon Transistor sot-23 32TK

    BLF888

    Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
    Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888

    blf878

    Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
    Text: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original     		PDF BLF878 BLF878 ez90 j4213 Bv 42 transistor J0314 Reference blf878

    Untitled

    Abstract: No abstract text available
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642

    BLF871

    Abstract: DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140
    Text: BLF871 UHF power LDMOS transistor Rev. 03 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P -N - P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .14 "Iprüi Pin configuration 1 = BASE 2 » EMITTER 3 * COLLECTOR ABSOLUTE MAXIMUM RATINGS Colleetor-emitter voltage Collector current DC


    OCR Scan     		PDF CMBT4403

    CMBT4403

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N -P transistor M arking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 _L 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 .004 "


    OCR Scan     		PDF CMBT4403 CMBT4403

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 * EMITTER 3 « COLLECTOR 2.6 2.4 _ 1.02 0.8ST 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT4403

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00


    OCR Scan     		PDF CMBT4403 23A33T4

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    7901S

    Abstract: No abstract text available
    Text: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.


    OCR Scan     		PDF EN5099 FC154 FC154 2SC4270 2SA1669, 7901S