Philips polystyrene capacitors
Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB
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BLW76
SC08a
Philips polystyrene capacitors
capacitor polyester philips
HF power amplifier
MGP502
push pull class AB RF linear
MGP501
Philips polystyrene capacitor
BLW76
class A push pull power amplifier
transistor w 04 59
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
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Untitled
Abstract: No abstract text available
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
O-205AD)
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
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8909E
Abstract: AT-42000 AT-42000-GP4 S21E AT42000-GP4 AV02-1002EN 42000
Text: AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized
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AT-42000
AT-42000
5965-8909E
AV02-1002EN
8909E
AT-42000-GP4
S21E
AT42000-GP4
42000
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SOT123 Package
Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain
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BLF145
SC08a
OT123
SOT123 Package
enamelled copper wire tables
HF SSB APPLICATIONS
BLF145
J119 transistor
J-146
MGP040
j146
enamelled copper wire mm table
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enamelled copper wire tables
Abstract: BLF145 J146 J-146
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage
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BLF145
OT123
MBB072
enamelled copper wire tables
BLF145
J146
J-146
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SSB transmitter
Abstract: 7540 Group BLF145
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF145 HF power MOS transistor Product specification Supersedes data of 1997 Dec 12 2003 Oct 13 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain
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M3D065
BLF145
OT123A
SCA75
613524/03/pp15
SSB transmitter
7540 Group
BLF145
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2D TRANSISTOR
Abstract: MMBTA92E marking 2D
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors MMBTA92E TRANSISTOR C WBFBP-03A DESCRIPTION PNP Epitaxial Silicon Transistor TOP 1.6x1.6×0.5 unit: mm FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) B C
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WBFBP-03A
MMBTA92E
WBFBP-03A
2D TRANSISTOR
MMBTA92E
marking 2D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A 1.6x1.6×0.5 unit: mm FEATURES Power dissipation PCM : 0.15 W (Ta=25℃) TOP B APPLICATION
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WBFBP-03A
THA42TTD03
WBFBP-03A
30MHz
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JANS2N5154
Abstract: 2N5154U3
Text: JANS 2N5152L and JANS 2N5154L Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation
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2N5152L
2N5154L
MIL-PRF-19500/544
2N5154L
2N5152
2N5154.
MIL-PRF-19500/544.
T4-LDS-0100-1,
JANS2N5154
2N5154U3
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A
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ZXTPS720MC
ZX3CD3S1M832
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3055 transistor
Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for
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D004T11
Q62702-U58
B--01
fl23Sb05
A23SbDS
B--03
3055 transistor
2N3055
M 3055 power transistor
transistor 3055
e 3055 t
3055 npn
power transistor 3055
on 3055
j 3055
power transistor IN 3055
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AT-30533
Abstract: No abstract text available
Text: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:
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AT-30511
AT-30533
AT-30533
OT-23
OT-143
OT-23,
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Untitled
Abstract: No abstract text available
Text: 2N2468 GERMANIUM PNP POWER TRANSISTOR PACKAGE STYLE T O - 5 .335 *“ .370“ * i , 305 • p .3 3 5 J DESCRIPTION: The 2N2468 is a Medium Power Transistor for General Purpose Am plifier and Switching Applications T1.50 MIN. 3.0 A lc -50 V ce P diss 5.0 W @ Tc = 25 °C
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2N2468
2N2468
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLV21
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TRANSISTOR BF495
Abstract: BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310
Text: _ N AMER PHILIPS/DISCRETE " ~ . DbE D • BF495 htSBTBl 001H30Û G ■ T - 2 1 - I* ? ' SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television r a n r a n ; it is especially recommended for f.m . tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor
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BF495
DD15313
7Z07390
31-iy
D01S31S
7Z62763
7Z08226
TRANSISTOR BF495
BF495 transistor
BF495
BF495C
N10Y
BF495D
transistor TI 310
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YBs transistor
Abstract: transistor AC 307
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-500B
T0220AB
YBs transistor
transistor AC 307
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BLw76a
Abstract: BLW76 BD433 74412
Text: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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hb53T31
BLw76a
BLW76
BD433
74412
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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SQT404
BUK7615-100A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking
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BUK482-200A
OT223
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transistor D 716
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking
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BUK482-200A
OT223
oni25
transistor D 716
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