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    TRANSISTOR 306 X Search Results

    TRANSISTOR 306 X Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 306 X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: [email protected] b PHOTO TRANSISTOR 光 電 晶 體 Rev: A Date: 2002/10/19 GH-306 Series Electro-Optical Characteristics: Code for parts Material GH-XXXXX Rise Time Fall Time BVceo Min V TN2469TK-06E


    Original     		PDF GH-306 TN2469TK-06E 008inch) 000pcs) 350mm 300mm 105mm) 360mm 320mm

    SSM3J317

    Abstract: SSM3J317T
    Text: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)


    Original     		PDF SSM3J317T SSM3J317 SSM3J317T

    Untitled

    Abstract: No abstract text available
    Text: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)


    Original     		PDF SSM3J317T

    SSM6J205FE

    Abstract: No abstract text available
    Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)


    Original     		PDF SSM6J205FE SSM6J205FE

    SSM6J205FE

    Abstract: M3002
    Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)


    Original     		PDF SSM6J205FE SSM6J205FE M3002

    SSM6J205FE

    Abstract: No abstract text available
    Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)


    Original     		PDF SSM6J205FE SSM6J205FE

    SSM6J205FE

    Abstract: No abstract text available
    Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)


    Original     		PDF SSM6J205FE SSM6J205FE

    Untitled

    Abstract: No abstract text available
    Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)


    Original     		PDF SSM6J205FE

    ALR060

    Abstract: ASI10513 1402 Transistor
    Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz


    Original     		PDF ALR060 ALR060 ASI10513 1402 Transistor

    j48 transistor

    Abstract: TRANSISTOR j4 ASI10545 AJT015
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm


    Original     		PDF AJT015 AJT015 j48 transistor TRANSISTOR j4 ASI10545

    Untitled

    Abstract: No abstract text available
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm


    Original     		PDF AJT015 AJT015

    ALR060

    Abstract: ASI10513 transistor 306 x
    Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR060 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS


    Original     		PDF ALR060 ALR060 ASI10513 ASI10513 transistor 306 x

    ASI10532

    Abstract: ASI223-12
    Text: ASI223-12 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI 2223-12 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS


    Original     		PDF ASI223-12 ASI10532 ASI10532 ASI223-12

    ALR060

    Abstract: ASI10513
    Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz


    Original     		PDF ALR060 ALR060 10CODE: ASI10513 ASI10513

    ASI10533

    Abstract: ASI2223-20
    Text: ASI2223-20 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI 2223-20 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS


    Original     		PDF ASI2223-20 ASI10533 ASI10533 ASI2223-20

    ALR006

    Abstract: ASI10510
    Text: ALR006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR006 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS


    Original     		PDF ALR006 ALR006 ASI10510 ASI10510

    ALR030

    Abstract: ASI10512
    Text: ALR030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR030 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R 2.75 A 32 V VCC PDISS


    Original     		PDF ALR030 ALR030 ASI10512 ASI10512

    AJT006

    Abstract: ASI10544
    Text: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG A 4x .062 x 45° DESCRIPTION: .040 x 45° C 2xB ØE D The ASI AJT006 is Designed for F G H I FEATURES: M R • Input Matching Network • • Omnigold Metalization System N MAXIMUM RATINGS


    Original     		PDF AJT006 AJT006 ASI10544 ASI10544

    AJT015

    Abstract: ASI10545
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG A 4x .062 x 45° DESCRIPTION: .040 x 45° C 2xB The ASI AJT015 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS


    Original     		PDF AJT015 AJT015 ASI10545 ASI10545

    ALR015

    Abstract: ASI10511
    Text: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR015 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS


    Original     		PDF ALR015 ALR015 ASI10511 ASI10511

    ALR030

    Abstract: 1402 Transistor ASI10512
    Text: ALR030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR030 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 7.0 dB at 30 W/ 1400 MHz


    Original     		PDF ALR030 ALR030 ASI10512 1402 Transistor ASI10512

    Untitled

    Abstract: No abstract text available
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is Designed for 960 – 1215 MHz, JTIDS Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.1 dB at 15 W/ 1215 MHz


    Original     		PDF AJT015 AJT015 ASI10545

    AM81214-060

    Abstract: transistor a 726
    Text: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network


    Original     		PDF AM81214-060 AM81214-060 transistor a 726

    ALR015

    Abstract: ASI10511
    Text: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR015 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.5 dB at 15 W/1400 MHz


    Original     		PDF ALR015 ALR015 ASI10511