4P04L11
Abstract: IPD50P04P4L-11
Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50P04P4L-11
PG-TO252-3-313
4P04L11
-10V1)
-10V2)
4P04L11
IPD50P04P4L-11
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4P04L11
Abstract: INFINEON marking
Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPD50P04P4L-11
PG-TO252-3-313
PG-TO252-3-313
4P04L11
-10V1)
-10V2)
4P04L11
INFINEON marking
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4P04L11
Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50
Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50P04P4L-11
PG-TO252-3-313
PG-TO252-3-313
4P04L11
-10V1)
-10V2)
726-IPD50P04P4L-11
4P04L11
IPD50P04P4L-11
IPD50p04
IPD50P04p4l11
IPD50P04P4L
PG-TO252-3
IPD50
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Untitled
Abstract: No abstract text available
Text: IPD5N25S3-430 OptiMOS -T Power-Transistor Product Summary V DS 250 V R DS on ,max 430 mW ID 5 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD5N25S3-430
PG-TO252-3-313
PG-TO252-3-
3N25430
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4P0413
Abstract: 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413
Text: IPD50P04P4-13 Type OptiMOS -P2 Power-Transistor Product Summary Package V DS -40 V R DS on 12.6 mW ID -50 A Marking Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50P04P4-13
PG-TO252-3-313
4P0413
-10V2)
4P0413
2101-7R
4-P-04
IPD50P04P4-13
IPD50p04
IPD50P04P4
IPD50P04P413
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4-P-04
Abstract: No abstract text available
Text: IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 6.4 mW ID -85 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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IPD85P04P4L-06
PG-TO252-3-313
4P04L06
-10V2)
4-P-04
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4N0402
Abstract: a3180 c9025 IPD90N04S4-02 TH-43
Text: IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD90N04S4-02
PG-TO252-3-313
4N0402
4N0402
a3180
c9025
IPD90N04S4-02
TH-43
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4N0405
Abstract: No abstract text available
Text: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD90N04S4-05
PG-TO252-3-313
4N0405
4N0405
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4N0403
Abstract: IPD90N04S4-03 65V-5 IPD90N04S4
Text: IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD90N04S4-03
PG-TO252-3-313
4N0403
4N0403
IPD90N04S4-03
65V-5
IPD90N04S4
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4N0405
Abstract: IPD90N04S4-05 smd diode 86A IPD90N04S4 F86A PG-TO252-3-313
Text: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD90N04S4-05
PG-TO252-3-313
4N0405
4N0405
IPD90N04S4-05
smd diode 86A
IPD90N04S4
F86A
PG-TO252-3-313
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4N04L04
Abstract: IPD90N04S4L-04 PG-TO25 IPD90N04S4 IPD90N04S4L PG-TO252-3-313
Text: IPD90N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.8 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD90N04S4L-04
PG-TO252-3-313
4N04L04
4N04L04
IPD90N04S4L-04
PG-TO25
IPD90N04S4
IPD90N04S4L
PG-TO252-3-313
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IPD70P04P4L-08
Abstract: a1409
Text: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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IPD70P04P4L-08
PG-TO252-3-313
4P04L08
-10V1)
IPD70P04P4L-08
a1409
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IPD90P04P4-05
Abstract: 4P0405 IPD90P04P4 IPD90P04 IPD90P04P405
Text: IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.7 mΩ ID -90 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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IPD90P04P4-05
PG-TO252-3-313
4P0405
-10V2)
IPD90P04P4-05
4P0405
IPD90P04P4
IPD90P04
IPD90P04P405
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IPD100N04S4-02
Abstract: 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n
Text: IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD100N04S4-02
PG-TO252-3-313
4N0402
IPD100N04S4-02
4N0402
DSS 1630
marking 206a
175C
D441000
ipd100n
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4P0409
Abstract: IPD70P04P4-09 IPD70P04P4
Text: IPD70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 8.9 mΩ ID -73 A Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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IPD70P04P4-09
PG-TO252-3-313
4P0409
-10V1)
4P0409
IPD70P04P4-09
IPD70P04P4
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Untitled
Abstract: No abstract text available
Text: IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V DS 100 V R DS on ,max 6.6 mW ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified TAB • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 3 • Green Product (RoHS compliant)
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IPD90N10S4L-06
PG-TO252-3-313
4N10L06
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4P0407
Abstract: IPD85P04P407
Text: IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.3 mW ID -85 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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IPD85P04P4-07
PG-TO252-3-313
4P0407
-10V2)
4P0407
IPD85P04P407
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IPD75N04S4-06
Abstract: 4N0406 PG-TO252-3-313 17A44 d75a 4N04 ipd75n
Text: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD75N04S4-06
PG-TO252-3-313
4N0406
726-IPD75N04S4-06
IPD75N04S4-06
4N0406
PG-TO252-3-313
17A44
d75a
4N04
ipd75n
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IPD50N04S4L-08
Abstract: 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A
Text: IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD50N04S4L-08
PG-TO252-3-313
IPD50N04S4-08
4N04L08
IPD50N04S4L-08
4N04L08
IPD50N04S4-08
PG-TO252-3-313
ANPS071E
8025A
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4N0410
Abstract: IPD50N04S4-10
Text: IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 9.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD50N04S4-10
PG-TO252-3-313
4N0410
4N0410
IPD50N04S4-10
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Untitled
Abstract: No abstract text available
Text: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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IPD70P04P4L-08
PG-TO252-3-313
4P04L08
-10V1)
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IPD50N04S4-08
Abstract: 4N0408
Text: IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD50N04S4-08
PG-TO252-3-313
4N0408
IPD50N04S4-08
4N0408
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4N0406
Abstract: 59-MID IPD75N04S4-06 PG-TO252-3-313 gs 32
Text: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD75N04S4-06
PG-TO252-3-313
4N0406
4N0406
59-MID
IPD75N04S4-06
PG-TO252-3-313
gs 32
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4P04L04
Abstract: IPD90P04P4L04
Text: IPD90P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.3 mW ID -90 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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IPD90P04P4L-04
PG-TO252-3-313
4P04L04
-10V2)
4P04L04
IPD90P04P4L04
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