TRANSISTOR 3305 Search Results

TRANSISTOR 3305 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 3305 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
BFW17A Abstract: bfw17a philips semiconductor lem HA Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good	OCR Scan	BFW17A 711Dfl2b D04fc 0D4b025 BFW17A bfw17a philips semiconductor lem HA	PDF
BLX92A Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944	PDF
BFQ268 Abstract: No abstract text available Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with	OCR Scan	BFQ268; BFQ268/1 711002t) BFQ268 OT172A1) BFQ268/I OT172A3 BFQ268/I 004SbbD	PDF
MRF227 Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica	OCR Scan	b3b72S4 MRF227 T0-206A O-391 MRF227 MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G	PDF
Untitled Abstract: No abstract text available Text: OLE D N AUER PHILIPS/DISCRETE 86D MAINTENANCE TYPE ^5 3 *1 3 1 DOIHQIQ 1 T ~ 3 ?-o y D 01852 • BLX96 _Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u .h .f. amplifiers for television transposers and transmitters.	OCR Scan	BLX96 7ZH737 bbS3T31 -16dB)	PDF
lc 945 p transistor NPN TO 92 Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision Text: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.	OCR Scan	0G14D10 BLX96 lc 945 p transistor NPN TO 92 BLX96 blx96a IEC134 lc 945 p transistor s3 vision	PDF
A83A marking Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich	OCR Scan	LTE21009R LTE21009RA 711002b FO-41B) LTE21009RA A83A marking 113A db 435A 95A 640 marking 113a transistor 81 110 w 85 MARKING 41B marking code 41b	PDF
transistor 7905 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications	OCR Scan		PDF
BFR94 Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305 Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency	OCR Scan	bbS3T31 BFQ34 BFR94 T-33-Ã OT-48 VCE-20V BFR94 Ferroxcube cross reference Ferroxcube core BFR94A f2nd transistor 3305	PDF
LWE2015R Abstract: No abstract text available Text: Az_ N AMER P H I L I P S / D I S C R E T E OLE D • bbSBTBl □QlSQl'i 6 ■ LWÊ2015R ^ r - ^ - o s r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w.	OCR Scan	01SQ1CI 2015R G01S053 LWE2015R 250mA LWE2015R	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.	OCR Scan	LbS3T31 LTE21025R FO-41B)	PDF
MP14 Abstract: SL2364C transistor 45 f 123 Monolithic Transistor Pair SL2364 6 "transistor arrays" ic Dual Long-Tailed Pair Transistor Array transistor array high speed Text: ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a monolithic integrated circuit manufactured on a very high	Original	SL2364 SL2364 SL2364C 200mW MP14 SL2364C transistor 45 f 123 Monolithic Transistor Pair 6 "transistor arrays" ic Dual Long-Tailed Pair Transistor Array transistor array high speed	PDF
Monolithic Transistor Pair Abstract: dilmon mp14 SL2364 SL2364C Dual Long-Tailed Pair Transistor Array 6 "transistor arrays" ic Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a	Original	SL2364 SL2364 200mW Monolithic Transistor Pair dilmon mp14 SL2364C Dual Long-Tailed Pair Transistor Array 6 "transistor arrays" ic	PDF

SL2364 Abstract: Monolithic Transistor Pair Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a	Original	SL2364 SL2364 Monolithic Transistor Pair	PDF
dilmon Abstract: No abstract text available Text: GEC P L E S S E Y S i S I M I < <> \ I < l 1 l> H ADVANCE INFORMATION S DS 3305-2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a	OCR Scan	SL2364 SL2364 SL2364C 37bfl52E 200mW 37bfl522 0D21D70 dilmon	PDF
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original		PDF
Untitled Abstract: No abstract text available Text: GEC P L E S S E Y SI M I t O I\ U I ADVANCE INFORMATION I (I K s DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected <> form a dual long-tailed pair with tail transistors. This is a noriolithic integrated circuit manufactured on a very high	OCR Scan	SL2364 SL2364 200mW	PDF
PLB16002U Abstract: 3b2 229 Text: -r=-33-<2S" Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL PLB16002U 5bE D 711GÛ2b G04b402 3b2 IPHIN FEATURES DESCRIPTION APPLICATIONS • Input matching cell allows an easier design of circuits	OCR Scan	PLB16002U FO-229 711Gfl2b G04b40a PLB16002U 3b2 229	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
ZTX857 Abstract: 300V transistor npn 2a DSA003778 Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio	Original	ZTX857 100mA, 100MHz 250mA, 500mA, 100ms ZTX857 300V transistor npn 2a DSA003778	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ISSUE 1 APRIL 94 FEATURES * 300 Volt VCEO * 3 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.	Original	ZTX857 100ms	PDF
transistor d 13009 Abstract: IC 566 vco transistor j 13009 IC 8085 pin Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•— 1.25 ± 0.1 -■	OCR Scan	UPA832TF 1S21EI2 NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 transistor d 13009 IC 566 vco transistor j 13009 IC 8085 pin	PDF

TRANSISTOR 3305 Search Results

TRANSISTOR 3305 Result Highlights (5)

TRANSISTOR 3305 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

BFW17A

BLX92A

BFQ268

MRF227

Untitled

lc 945 p transistor NPN TO 92

A83A marking

transistor 7905

BFR94

LWE2015R

Untitled

MP14

Monolithic Transistor Pair

SL2364

dilmon

HMXR-5001

Untitled

PLB16002U

Transistor 2SA 2SB 2SC 2SD

ksd 302 250v, 10a

ZTX857

Untitled

transistor d 13009