TRANSISTOR SMD MARKING CODE 352
Abstract: PBSS304ND PBSS304PD mosfet SMD MARKING CODE 352
Text: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 7 April 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
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PBSS304ND
OT457
SC-74)
PBSS304PD.
PBSS304ND
TRANSISTOR SMD MARKING CODE 352
PBSS304PD
mosfet SMD MARKING CODE 352
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TRANSISTOR SMD MARKING CODE 352
Abstract: PBSS304ND PBSS304PD
Text: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
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PBSS304ND
OT457
SC-74)
PBSS304PD.
PBSS304ND
TRANSISTOR SMD MARKING CODE 352
PBSS304PD
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p-channel mosfet with diode sot89
Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
Text: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of
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OT1061
OT1118
OT1061)
OT1118)
ap6545UP
PMFPB6532UP
p-channel mosfet with diode sot89
PMFPB6532
PMFPB6545
AEC-Q101-qualified
PMEG30
MOSFET455
PBSS304PX
PMEG3020CPA
PMEG4010CPA
PMEG2020CPA
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: No abstract text available
Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV160UP
O-236AB)
MOSFET TRANSISTOR SMD MARKING CODE nh
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BUZ100
Abstract: to 220 smd BUZ100 SIEMENS
Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • d tfd f rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ100 Vbs 50 V b 60 A f%>S on 0.018 Q Package
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OCR Scan
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O-220
BUZ100
C67078-S1348-A2
BUZ100
to 220 smd
BUZ100 SIEMENS
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SMD TRANSISTOR MARKING 5H
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 PBSS301NX PBSS301PX 6 pin TRANSISTOR SMD CODE 5H
Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 01 — 21 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
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PBSS301PX
SC-62/TO-243)
PBSS301NX.
PBSS301PX
SMD TRANSISTOR MARKING 5H
TRANSISTOR SMD CODE PACKAGE SOT89
PBSS301NX
6 pin TRANSISTOR SMD CODE 5H
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SmD TRANSISTOR 42T
Abstract: smd 42t
Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100
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OCR Scan
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O-220
BUZ100
C67078-S1348-A2
6235bDS
SmD TRANSISTOR 42T
smd 42t
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PBSS301NZ
Abstract: PBSS301PZ SC-73 TRANSISTOR SMD MARKING CODE 57
Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
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PBSS301PZ
OT223
SC-73)
PBSS301NZ.
PBSS301PZ
PBSS301NZ
SC-73
TRANSISTOR SMD MARKING CODE 57
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Untitled
Abstract: No abstract text available
Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
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PBSS301PZ
OT223
SC-73)
PBSS301NZ.
PBSS301PZ
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PBSS301NZ
Abstract: PBSS301PZ SC-73
Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 01 — 7 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
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PBSS301PZ
OT223
SC-73)
PBSS301NZ.
PBSS301PZ
PBSS301NZ
SC-73
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Untitled
Abstract: No abstract text available
Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
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PBSS301PX
SC-62/TO-243)
PBSS301NX.
PBSS301PX
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sot89 footprint
Abstract: PBSS301NX PBSS301PX SMD TRANSISTOR MARKING 5H
Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
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PBSS301PX
SC-62/TO-243)
PBSS301NX.
PBSS301PX
sot89 footprint
PBSS301NX
SMD TRANSISTOR MARKING 5H
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C67078-S1348-A2
Abstract: No abstract text available
Text: BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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O-220
C67078-S1348-A2
C67078-S1348-A2
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smd code A9 3 pin transistor
Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS5612PA
OT1061
PBSS4612PA.
smd code A9 3 pin transistor
smd transistor a9
NXP SMD TRANSISTOR MARKING CODE
PBSS5612PA
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smd transistor marking A5
Abstract: TRANSISTOR REPLACEMENT table for transistor PBSS4612PA
Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4612PA
OT1061
PBSS5612PA.
smd transistor marking A5
TRANSISTOR REPLACEMENT table for transistor
PBSS4612PA
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Untitled
Abstract: No abstract text available
Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS5612PA
OT1061
PBSS4612PA.
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Untitled
Abstract: No abstract text available
Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4612PA
OT1061
PBSS5612PA.
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smd transistor marking A6
Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4620PA
OT1061
PBSS5620PA.
smd transistor marking A6
TRANSISTOR SMD MARKING CODE a6
NXP SMD TRANSISTOR MARKING CODE
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TRANSISTOR SMD CODE 339
Abstract: smd zener diode code n0
Text: SIEMENS PROFET BTS430K2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • Clamp of negative voltage at output 50 Vbb-V o u t Avalanche Clamp Short-circuit protection Vbb operation 4.5 . . 32 Current limitation
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OCR Scan
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BTS430K2
Q67060-S6200-A2
O-220
E3043
BTS430K2
Q67060-S6200-A3
TRANSISTOR SMD CODE 339
smd zener diode code n0
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TRANSISTOR SMD MARKING CODE 2s
Abstract: TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103
Text: PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat BISS transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5112PAP
DFN2020-6
OT1118)
PBSS4112PANP.
PBSS4112PAN.
AEC-Q101
TRANSISTOR SMD MARKING CODE 2s
TRANSISTOR SMD MARKING CODE QR
PBSS5112PAP
transistor 103
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PBSS4160DS
Abstract: PBHV8140Z PBLS2003D pbss4160dpn PBLS4004Y PBLS4003D PBLS2003S PBLS2021D PBSS4350Z, PBSS4350X, PBSS4350T PBSS4021NT
Text: The most efficient low VCEsat BISS transistors Experience best performance for on-state-resistance and switching times. Choose from NXP’s broad portfolio of energy and space saving products. Low VCEsat (BISS) transistors Product News : Fourth-generation technology
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OurBHV9115T
PBHV9540Z
PBHV9040T
PBHV9050T
PBHV9050Z
M3D088
PBSS4160DS
PBHV8140Z
PBLS2003D
pbss4160dpn
PBLS4004Y
PBLS4003D
PBLS2003S
PBLS2021D
PBSS4350Z, PBSS4350X, PBSS4350T
PBSS4021NT
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BPX81-4
Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
Text: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291
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OCR Scan
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BPX81
BPX82-89,
BPX82
76K130
18-pln
023SbQS
BPX81-4
BPX81-3
BPX81
BPX-81-4
Typ BPX81-2
BPX80
BPX81-2
BPX82
BPX89
phototransistor array
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSH111BK
O-236AB)
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DNT04
Abstract: DNT04S0A0R03NFA DNT04S0A0S03NFA
Text: FEATURES High Efficiency: 93%@ 5Vin, 3.3V/5A out Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Standard footprint and pinout Resistor-based trim Output voltage programmable from 0.75V to 3.63V via external resistors
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EN60950-1)
73/23/EEC
93/68/EEC
DNT04,
x6220
DNT04SIP5A
DNT04
DNT04S0A0R03NFA
DNT04S0A0S03NFA
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