TRANSISTOR 3440 Search Results

TRANSISTOR 3440 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 3440 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
a 4x transistor Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor Text: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using	Original	MBC13900PP/D MBC13900 MBC13900 a 4x transistor MOTOROLA TRANSISTOR 318M motorola rf Power Transistor motorola sps transistor	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
sot-343 as Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2 Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70	Original	MBC13900PP/D MBC13900 MBC13900 sot-343 as a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M motorola sps transistor 3AA2	PDF
Motorola Abstract: MBC13900 MOTOROLA TRANSISTOR 318M Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70	Original	MBC13900PP/D MBC13900 MBC13900 Motorola MOTOROLA TRANSISTOR 318M	PDF
G-4035 Abstract: g4035 transistor g4035 Text: r Z 7 Ä T# S G S - R T H O M S O N LESM KS M JE 3440 SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed tor use in consumer and industrial	OCR Scan	MJE3440 OT-32 G-4035 g4035 transistor g4035	PDF
2N3440 Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J Text: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications	OCR Scan	2n3439 2N3440 j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J	PDF
transistor C 2290 Abstract: td 1410 NP34N03HLD NP34N03ILD Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP34N03HLD,NP34N03ILD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION	Original	NP34N03HLD NP34N03ILD NP34N03HLD O-251 O-252 transistor C 2290 td 1410 NP34N03ILD	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
MOTOROLA TRANSISTOR Abstract: No abstract text available Text: Freescale Semiconductor, Inc. Order this document by MBC13901PP/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005	Original	MBC13901PP/D MBC13901 MBC13901 MOTOROLA TRANSISTOR	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
C5750X7R1H106M Abstract: 30RF35 Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.	Original	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35	PDF
Untitled Abstract: No abstract text available Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100	PDF
TRANSISTOR J601 Abstract: gp816 RF35 J2396 J249 Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249	PDF
motorola sps transistor Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR	Original	MRF16030/D MRF16030 MRF16030 DEVICEMRF16030/D motorola sps transistor motorola 572 transistor Motorola 1600 395C-01 sps transistor	PDF

LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
MOTOROLA TRANSISTOR Abstract: 55 ic Sot-343 sot-343 as TRANSISTOR MOTOROLA Text: Order this document by MBC13901PP/D Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor The MBC13901 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70	Original	MBC13901PP/D MBC13901 MBC13901 MOTOROLA TRANSISTOR 55 ic Sot-343 sot-343 as TRANSISTOR MOTOROLA	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA	Original	MRF1047T1/D 03AUG01 26MAR02 200E MRF1047 MRF1047T1	PDF
CM2025 Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440 Text: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S	OCR Scan	AN415A) CM2025 w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440	PDF
BDX 241 Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905	PDF
3440S Abstract: 2N3440S hFE-10 G-2675 Text: 2N 3440S EPITAXIAL PLANAR NPN HIGH VOLTAGE AMPLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high voltage sw itching and linear am plifier applications. The complementary PNP type is the 2N 5415S. ABSOLUTE MAXIMUM RATINGS	OCR Scan	3440S 3440S 5415S. 2N3440S G-2675 10/us 2N3440S hFE-10 G-2675	PDF
2N3440S Abstract: No abstract text available Text: 2N 3440S SILICON PLANAR NPN H IG H -V O LTA G E AM PLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Je d ecT O -39 metal case, intend ed fo r high voltage switching and linear am p lifie r applications. The com plementaryPNP type is 2N 5415S.	OCR Scan	3440S 3440S JedecTO-39 5415S. 2N3440S 300/is, 2N3440S	PDF
200B Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET	Original	MRF5P20180/D MRF5P20180R6 200B MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA	PDF

TRANSISTOR 3440 Search Results

TRANSISTOR 3440 Result Highlights (5)

TRANSISTOR 3440 Datasheets Context Search

a 4x transistor

2sb504

sot-343 as

Motorola

G-4035

2N3440

transistor C 2290

2N2222A 338

MOTOROLA TRANSISTOR

sx3704

C5750X7R1H106M

Untitled

TRANSISTOR J601

motorola sps transistor

LG color tv Circuit Diagram schematics

IC HXJ 2038

MOTOROLA TRANSISTOR

1N6227

200E

CM2025

BDX 241

3440S

2N3440S

200B