TRANSISTOR 3B5 Search Results

TRANSISTOR 3B5 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 3B5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mda324 Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327	PDF
smd transistor 8c Abstract: 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPW60R160C6 JESD22	PDF
smd transistor 8c Abstract: Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPW60R160C6 JESD22	PDF
Untitled Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6	PDF
smd transistor 8c Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c	PDF
transistor f613 Abstract: transistor bc 567 Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.	Original	AO4604 AO4604 AO4604L -AO4604L 16789ABA2CDE9AFDC transistor f613 transistor bc 567	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b^E D • bbS3T31 0030545 S^2 M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	bbS3T31 BUK444-800A/B BUK444 -800A -800B	PDF
transistor A4t 85 Abstract: 3b5 transistor transistor A4t 45 transistor A4t Text: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLU30/12 OT-119) 711GfiEti transistor A4t 85 3b5 transistor transistor A4t 45 transistor A4t	PDF
t07 transistor Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile	OCR Scan	bbS3T31 BLU30/28 BLU30/28 OT119) t07 transistor	PDF
MCA45T Abstract: capacitor philips ll Text: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	711002b BLU30/28 BLU30/28 OT119) 711Dfl5b 0Db2735 MCA45T capacitor philips ll	PDF
capacitor 104 PF disc Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331 Text: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	BLU30/28 BLU30/28 OT119) capacitor 104 PF disc transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b 'Ì E D • ^53^31 OOE fiôEM T 3 0 I B L U 3 U /1 i> I APX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 4 7 0 M Hz communications band. Features:	OCR Scan	LU3U/12 OT-119) BLU30/12	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz	OCR Scan	l4475fl4 AT-60585	PDF

BU508A Abstract: BU508D BY223 philips bu508a bu50ba diode BY223 BU508D transistor dd77473 transistor BU508D BU-508A Text: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in S O T 9 3 A envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The B U 508 D has an integrated efficiency diode.	OCR Scan	BU508A; BU508D OT93A BU508D BU508D) 711002b DD77473 BU508A BY223 philips bu508a bu50ba diode BY223 BU508D transistor transistor BU508D BU-508A	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b	OCR Scan	O-220 C67078-S1321-A2 023SbD5 OOA4471	PDF
Untitled Abstract: No abstract text available Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.	OCR Scan	BBS33F; 3D93Sf BD937F; BD939F BD941F 711002b OT186 BD934F, BD936F, BD938F,	PDF
f173 Abstract: No abstract text available Text: SG S-TH O M SO N S D 1 2 7 5 -0 1 m RF & MICROWAVE TRANSISTO RS VHF MOBILE APPLICATIONS 1 60 MHz 13.6 VOLTS COMMON EMITTER p OUT = 40 W MIN. WITH 9.0 dB GAIN PIN CONNECTION V \ DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF	OCR Scan	SD1275-01 f173	PDF
IT136 Abstract: IT137 IT138 IT139 XIT137 XIT138 Text: IT136-IT139 CAL06IC CORP_ M8E D • W 3B5 000D3bS l « C 6 C calocft Monolithic Dual PNP General Purpose Amplifier CORPORATION V IT136-IT139 FEATURES • • • • • High Gain at Low Current Low Output Capacitance Tight Ib Match Tight V b e Tracking	OCR Scan	IT136-IT139 IT136, IT137 IT139 IT138 10jjA, 10jiA, IT136 IT137 IT138 IT139 XIT137 XIT138	PDF
Untitled Abstract: No abstract text available Text: ¿ = 7 S G S -T H O M S O N TEA2164 SWITCH MODE POWER SUPPLY PRIMARY CIRCUIT • POSITIVE AND NEGATIVE OUTPUT CUR RENT UP T 0 1.2A AND - 1.7A ■ A TWO LEVEL COLLECTOR CURRENT LIMI TATION ■ COMPLETE TURN OFF AFTER LONG DURA TION OVERLOADS ■ UNDER AND OVER VOLTAGE LOCK-OUT	OCR Scan	TEA2164 TEA2164control TEA2164 007Sb4c DIP16PW	PDF
siemens BL 350 Abstract: marking W4s FET marking code 365 npn fet transistor marking code HF d5 transistor npn AFC marking Siemens transistors rf transistor 3b5 00jT Text: B CR 400 P relim in ary Data A c tiv e Bias C o n tro lle r C h a ra c te ris tic s • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A p p lic a tio n notes • Stabilizing bias current of NPN transistors and FET's from	OCR Scan	200mA 235b05 7TM72 siemens BL 350 marking W4s FET marking code 365 npn fet transistor marking code HF d5 transistor npn AFC marking Siemens transistors rf transistor 3b5 00jT	PDF
mmic a08 Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: 3-phase motor driver BA6440FP The B A 6 4 4 0 F P is an 1C used for driving video cassette recorder capstan motors. Dimensions Units : mm BA6440FP (HSOP28) Features • available in a H S O P 2 8 package • supply voltage range 4 ~ 6 V (control block) and 3 ~ 20 V (output block)	OCR Scan	BA6440FP HSOP28)	PDF
MPM3003 Abstract: MC33035 ss43 hall RGP 30 H1 MOTOROLA brushless dc controller schematic Ss54 DIODE drive control damp motor Transistor sS41 MC33033 TJ3 diode bridge Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MPM3003 ICePAK Power M odule P-Channel and N-Channel Power M OSFET in a Three-Phase Bridge Configuration M otorola Preferred D evice The MPM3003 is a three-phase bridge power circuit packaged in the new power SIP called the ICePAK package. The upper legs of the bridge consist of three P-Channel	OCR Scan	MPM3003 b3b7254 MC33035 ss43 hall RGP 30 H1 MOTOROLA brushless dc controller schematic Ss54 DIODE drive control damp motor Transistor sS41 MC33033 TJ3 diode bridge	PDF

TRANSISTOR 3B5 Search Results

TRANSISTOR 3B5 Result Highlights (5)

TRANSISTOR 3B5 Datasheets Context Search

mda324

smd transistor 8c

smd transistor 8c

Untitled

smd transistor 8c

transistor f613

la 4440 amplifier circuit diagram 300 watt

Untitled

transistor A4t 85

t07 transistor

MCA45T

capacitor 104 PF disc

Untitled

Untitled

BU508A

Untitled

Untitled

f173

IT136

Untitled

siemens BL 350

mmic a08

Untitled

MPM3003