MJ423
Abstract: Y300500
Text: ON Semiconductort MJ423 High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS • High Voltage — • • VCEX = 400 Vdc
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MJ423/D
r14525
MJ423
Y300500
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Untitled
Abstract: No abstract text available
Text: 2729GN-400 Rev 1 2729GN-400 400 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-400 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts
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2729GN-400
2729GN-400
55-KR
55-KR
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1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
1N4001 transistor free
BC337 figure
1N4001
BC337
BU323P
silicon diode 1N4001 specifications
transistor BC337
transistor darlington npn
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BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
BC337 rbe
BC337 figure
1N4001
BC337
BU323P
diode 1N4001 voltage limitations
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MDS400
Abstract: No abstract text available
Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold
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MDS400
MDS400
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Untitled
Abstract: No abstract text available
Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
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TPR400
Abstract: max7540
Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
TPR400
TPR400
max7540
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transistor C128
Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT
Text: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes
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C1-28/C1-28Z
C1-28
150oCNDS
transistor C128
c128 transistor
28c128
C1-28Z
transistor c1-28
GHZ TECHNOLOGY
55FT
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Motorola AN222A
Abstract: MJ10023 1N4937 sps transistor
Text: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS
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MJ10023/D
MJ10023
MJ10023
DeviceMJ10023/D
Motorola AN222A
1N4937
sps transistor
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MJ423
Abstract: mj423 motorola MOTOROLA TRANSISTOR
Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits.
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MJ423/D
MJ423
mj423 motorola
MOTOROLA TRANSISTOR
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BU208A equivalent
Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching
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MJ13333
MJ13333
AMP32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU208A equivalent
BD237 similar
IC 3843 8 Pin
BU108
BU208
2N4347
BD-31
2n3055 motorola
bdx54c equivalent
MJ13330
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100MIL
Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor
Text: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450
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UDR-500
UDR-500
100MIL)
180pf,
470pf,
100MIL
FERRITE TOROID
Johanson Piston Trimmer
indiana general
udr 70
F624-19
l44 transistor
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MARKING TRANSISTOR T44
Abstract: MPSA44
Text: CHENMKO ENTERPRISE CO.,LTD CHT44PT SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)
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CHT44PT
OT-23
OT-23)
500mA)
MPSA44
10MHz
MARKING TRANSISTOR T44
MPSA44
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CHT44GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT44GP SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)
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CHT44GP
OT-23
OT-23)
500mA)
MPSA44
10MHz
CHT44GP
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MJ10005 equivalent
Abstract: MJ10005 transistor mj10005 1N4937 MJ10004
Text: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,
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MJ10005
MJ10005
100Nlit
r14525
MJ10005/D
MJ10005 equivalent
transistor mj10005
1N4937
MJ10004
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UMIL10P
Abstract: No abstract text available
Text: R.3.070799 UMIL10P 10 Watts, 28 Volts, Class AB UHF Communications 100 – 400 MHz CASE OUTLINE 55FU Style 2 GENERAL DESCRIPTION The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in
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UMIL10P
UMIL10P
200mA
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6DI15S-050
Abstract: 1DI300ZP-120 m114 1di200 6DI20MS-050 M615
Text: /\°7 —t / W X / Power Devices • v ,:i~ J t' PowerTransistor Modules Power transistor modules with zener diode for snubber circuit Vcso V ceo tc Votts sus Votts Com Amps 300 400 400 300 300 400 400 1DI300MN-050 1DI400MN-050 1DI400MP-050 1DI300MN-120
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1DI300MN-050
1DI400MN-050
1DI400MP-050
1DI300MN-120
1DI300MP-120
1DI400MN-120
1DI400MP-120
1DI200ZN-120
1DI200ZP-120
1DI300ZN-120
6DI15S-050
1DI300ZP-120
m114
1di200
6DI20MS-050
M615
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transistor s72
Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K40A41
Amperes/1000
transistor s72
S72 Transistor
KS621K40A41
transistor b 1417
transistor s70
powerex ks62
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transistor TE 901 equivalent
Abstract: transistor TE 901 IGT6D11 IGT6E11
Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D11
6D11-
transistor TE 901 equivalent
transistor TE 901
IGT6E11
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IGT8D21
Abstract: IGT8E21
Text: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT8D21
60Msec,
IGT8E21
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0105-50
Abstract: Scans-00115685
Text: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon
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-T-33-15
-65to
Vcc-28V
T-33-15
0105-50
Scans-00115685
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transistor k 4212
Abstract: of transistor C 4212 KS624540 K10-43 k1043 transistor 600 volts 60 amperes powerex ks62 diode S62
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/600 Volts O UTLINE DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are high power devices designed for
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Amperes/600
KS624540
transistor k 4212
of transistor C 4212
KS624540
K10-43
k1043
transistor 600 volts 60 amperes
powerex ks62
diode S62
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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s75 transistor
Abstract: KS621240 powerex ks62 transistor b 1417
Text: fOMCREX KS621240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SítlCflB DâTHnCftOn Transistor Module 400 Amperes/1200 Volts O U T L IN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621240
Amperes/1200
s75 transistor
KS621240
powerex ks62
transistor b 1417
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