4124DL
Abstract: 4124dl power transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high
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4124D
4124D
4124DL-T92-B
4124DG-T92-B
4124DL-T92-K
4124DG-T92-K
4124DL-T92-R
4124DG-T92-R
4124DL-T60-K
4124DL
4124dl power transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4126D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high
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4126D
4126D
4126DL-T92-B
4126DG-T92-B
4126DL-T92-K
4126DG-T92-K
4126DL-T92-R
4126DG-T92-R
4126DL-T60-K
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high
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4128D
4128D
O-126
4128DL-T60-K
4128DG-T60-K
4128DL-T60-T
QW-R204-029
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high
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4128D
4128D
O-126
4128DL-T60-K
4128DG-T60-K
4128DL-T60-T
QW-R204-029
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NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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transistor s72
Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K40A41
Amperes/1000
transistor s72
S72 Transistor
KS621K40A41
transistor b 1417
transistor s70
powerex ks62
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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KD221K05
Abstract: D-18 D-19 D-20 KD221 X1000 ST DARLINGTON TRANSISTOR kd2-21
Text: ponasí KD221K05 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 50 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221
Amperes/1000
KD221K05
D-18
D-19
D-20
X1000
ST DARLINGTON TRANSISTOR
kd2-21
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KS221K05
Abstract: S-14 S-15 c 1181 ks22 powerex ks22 C101-102
Text: KS221K05 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 50 Amperes/1000 Volts Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS221K05
Amperes/1000
KS221K05
S-14
S-15
c 1181
ks22
powerex ks22
C101-102
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diode dual d92
Abstract: KD621220
Text: m /HBSX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUdl DsrHnQtOn Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD621220
Amperes/1200
diode dual d92
KD621220
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Untitled
Abstract: No abstract text available
Text: KD424520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15B97-1800 412 925-7272 DUdl DSfHnQtOfl Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD424520
15B97-1800
Amperes/600
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e60 diode
Abstract: D-50 KD324510HB
Text: ma/EREX KD324510HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 High-Beta Dual Darlington Transistor Module 100 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are
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KD324510HB
Amperes/600
e60 diode
D-50
KD324510HB
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KS224515
Abstract: S-30 ks22 powerex ks22
Text: KS224515 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS224515
Amperes/600
KS224515
S-30
ks22
powerex ks22
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Untitled
Abstract: No abstract text available
Text: m W EREX KS221K10 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SiflQlB DdrlíngtOD Transistor Module 100 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS221K10
Amperes/1000
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2SC5170
Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for
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2SC5170
2SC5170
100Hz)
110mVtyp
X10-3
LE300
mitsubishi vcb
transistor Common Base amplifier
common base amplifier circuit
DUAL TRANSISTOR
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KS624530
Abstract: No abstract text available
Text: KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SinQlB DdtHflQtOH Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS624530
Amperes/600
KS624530
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Untitled
Abstract: No abstract text available
Text: m M EREX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD621220
Amperes/1200
Inv12)
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Untitled
Abstract: No abstract text available
Text: <WEHEX KD221203 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U dl DdrHflQtOfl Transistor Module 30 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221203
Amperes/1200
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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D1181
Abstract: KS221K10 S-25 C1339 ks22 powerex ks22
Text: V O M E R E * KS221K10 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 100 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS221K10_
Amperes/1000
D1181
KS221K10
S-25
C1339
ks22
powerex ks22
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transistor k 4212
Abstract: of transistor C 4212 KS624540 K10-43 k1043 transistor 600 volts 60 amperes powerex ks62 diode S62
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/600 Volts O UTLINE DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are high power devices designed for
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Amperes/600
KS624540
transistor k 4212
of transistor C 4212
KS624540
K10-43
k1043
transistor 600 volts 60 amperes
powerex ks62
diode S62
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transistor kd221k75
Abstract: KD221K75 D-40 D40 transistor
Text: KM B SÍ KD221K75_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 75 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221K75_
Amperes/1000
transistor kd221k75
KD221K75
D-40
D40 transistor
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Untitled
Abstract: No abstract text available
Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123
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2N4123/4124
2N4123:
2N4124:
625mW
2N4124
2N3904
10OKHz
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