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    TRANSISTOR 431 N Search Results

    TRANSISTOR 431 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 431 N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SLA6023 driver schematic

    Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
    Text: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022


    Original     		PDF STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA6023 driver schematic UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0

    transistor 431 c

    Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
    Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity


    Original     		PDF 431DD 431/1203/Q1 ROP/1203/Q1 transistor 431 c 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a

    TRANSISTOR bH-16

    Abstract: BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56T1 OT-223 inch/1000 BCP56T3 inch/4000 100mA 250mA 500mA TRANSISTOR bH-16 BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor

    ZTX108B

    Abstract: ZR431 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21
    Text: Application Note 27 Issue 1 June 1996 ZR431 Application Note David Bradbury The ZR431 is an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving excellent temperature stability and the capability of operating at currents from 50µA up


    Original     		PDF ZR431 to100mA. 100nA, ZTX108B 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21

    cadstar pcb

    Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
    Text: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49


    Original     		PDF

    marking code AE SMD Transistor

    Abstract: smd transistor 2T transistor smd code marking 431 transistor 431 smd n1f smd national marking code 8 soic 431 TRANSISTOR smd lm431 transistor SMD 2t n1f sot23
    Text: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized package 4-Bump micro SMD using National’s micro SMD package technology. The output voltage may be set at any level


    Original     		PDF LM431 15-Aug00 AN-1112: 2-Sep-2000] marking code AE SMD Transistor smd transistor 2T transistor smd code marking 431 transistor 431 smd n1f smd national marking code 8 soic 431 TRANSISTOR smd transistor SMD 2t n1f sot23

    smd transistor 2T

    Abstract: transistor smd code marking 431 transistor 431 smd transistor smd marking 431 K TRANSISTOR SMD MARKING CODE 2t transistor smd marking 431 SMD TRANSISTOR MARKING 2T smd transistor A1 sot-23 TRANSISTOR SMD MARKING CODE 2.T 431 SMD SOT-23 CODE MARKING
    Text: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized package 4-Bump micro SMD using National’s micro SMD package technology. The output voltage may be set at any level


    Original     		PDF LM431 27AN-1112: 5-Aug-2002] smd transistor 2T transistor smd code marking 431 transistor 431 smd transistor smd marking 431 K TRANSISTOR SMD MARKING CODE 2t transistor smd marking 431 SMD TRANSISTOR MARKING 2T smd transistor A1 sot-23 TRANSISTOR SMD MARKING CODE 2.T 431 SMD SOT-23 CODE MARKING

    transistor w 431

    Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
    Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW


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    sd 431 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		PDF bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor

    29Z3

    Abstract: Transistor CODE FR m7am
    Text: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided


    OCR Scan     		PDF BCY67 BCY67 29Z3 Transistor CODE FR m7am

    2-7D101A

    Abstract: 2SA1431
    Text: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 100-320(VCe = -2 V , IC= -0.5A)


    OCR Scan     		PDF 2SA1431 961001EAA2' 2-7D101A 2SA1431

    2SA143

    Abstract: 2SA1431 2-7D101A
    Text: 2SA1431 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 431 Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hEE Linearity : hFE(l) = 100-320 (VCe = -2 V , IC= -0.5A )


    OCR Scan     		PDF 2SA1431 2SA143 2SA1431 2-7D101A

    Transistor PJ 431

    Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
    Text: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue


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    TFK u 116

    Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
    Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW


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    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


    OCR Scan     		PDF BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 0033530 b88 Philips Semiconductors APX Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N AnER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT drain-source voltage


    OCR Scan     		PDF bbS3T31 BSP122 OT223

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.


    OCR Scan     		PDF RZB12250Y 100ps;

    buz349

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 0D20bSD 7 SSE D N AUER PHILIPS/ DISCRE TE PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery


    OCR Scan     		PDF 0D20bSD BUK627-400A BUK627-400B BUK627 -400A T-39-H bS3T31 0020bS4

    h a 431 transistor

    Abstract: DARLINGTON ESM 30 diode ESM 5045D ESM5045D 431E ESM5045DV
    Text: PH I L I P S INTERNATIONAL 4SE D E3 711002b 0D31237 J 7 SPHIN ESM5045D V T -3 3 ~ 2 ? SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).


    OCR Scan     		PDF 711002b 0D31237 ESM5045D OT227B. Csat/50 Csat/50--VBEoff h a 431 transistor DARLINGTON ESM 30 diode ESM 5045D 431E ESM5045DV

    ESM5045D

    Abstract: No abstract text available
    Text: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,


    OCR Scan     		PDF bbS3T31 ESM5045D Csat/50

    Untitled

    Abstract: No abstract text available
    Text: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		PDF bb53T31 BUK482-100A OT223 Fig-14 riin76ter bb53R31 DD3D736 OT223.

    NE582N

    Abstract: 75494 NE582
    Text: NE582-N PIN CONFIGURATION DESCRIPTION The NE582 is a general interface device comprising a high current output transistor and drive circu itry in each of 6 elements. Each output transistor is individually capa­ ble o f sinking 400mA with a typical satura­


    OCR Scan     		PDF NE582-N NE582 400mA 16-pin 100kHz NE582N 75494

    2N2297

    Abstract: transistor 2N2297 transistor w 431
    Text: 2N2297 PHILIP S IN TE RN AT IO NA L 71100 2b SbE D 00425T4 bbT • PHIN SILICON PLANAR EPITAXIAL TRANSISTO R N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter


    OCR Scan     		PDF 2N2297 711002b 00425T4 D04S5 2N2297 transistor 2N2297 transistor w 431