TRANSISTOR 45 F 123 Search Results

TRANSISTOR 45 F 123 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 45 F 123 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR • fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA	Original	MRF1047T1/D 25SEP01 26MAR02 200E MRF1047 MRF1047T1	PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA	Original	MRF1047T1/D 03AUG01 26MAR02 200E MRF1047 MRF1047T1	PDF
BFP520 Abstract: VPS05605 Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability	Original	BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Aug-09-2001 BFP520 VPS05605	PDF
ev 2816 Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 Gold metallization for high reliability	Original	VPS05605 OT-343 50Ohm 45GHz -j100 Jun-09-2000 ev 2816 ic rom 2816 VPS05605 transistor bfp 520 gummel	PDF
VPS05605 Abstract: No abstract text available Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 Gold metallization for high reliability	Original	VPS05605 OT-343 50Ohm 45GHz -j100 Jan-29-1999 VPS05605	PDF
IC 7481 pin configuration Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability	Original	BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Sep-26-2001 IC 7481 pin configuration IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor	PDF
IC 7481 pin configuration Abstract: BFP520 application notes Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability	Original	BFP520 VPS05605 OT343 IC 7481 pin configuration BFP520 application notes	PDF
BFP520 application notes Abstract: SIEGET 45 Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability	Original	BFP520 VPS05605 OT343 BFP520 application notes SIEGET 45	PDF
AM1214-300 Abstract: No abstract text available Text: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base	Original	AM1214-300 AM1214-300	PDF
transistor b 1238 Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520 Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1	Original	VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520	PDF
AM81214-300 Abstract: AM81214-30 k 118 Text: AM81214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM81214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base	Original	AM81214-300 AM81214-300 AM81214-30 k 118	PDF
AM1214-300 Abstract: No abstract text available Text: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base	Original	AM1214-300 AM1214-300	PDF
transistor D613 equivalent Abstract: TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567 Text: 123455678 LIN-Slave for relay and DC motor control 9ABCDEAF8 Microcontroller: MLX16x8 RISC CPU o o o 16 bit RISC-CPU Co-processor for fast multiplication and division In-circuit debug and emulation Memories o o o 32 kByte Flash with ECC 2 kByte RAM 384 Byte EEPROM with ECC for customer purpose	Original	MLX16x8 J2602, ISO/TS16949 ISO14001 MLX81150 transistor D613 equivalent TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567	PDF
transistor 4040 Abstract: 2sd794 3400 transistor 2sd794 transistor transistor 2sd794 ic 4040 Text: 2SD794/2SD794A TO-126C Transistor NPN TO-126C 1. EMITTER 2. COLLECTOR 123 3. BASE 4.040 4.240 Features 10.800 11.200 3.100 3.300 2.700 2.900 High voltage and Large current capacity Complementary to 2SB744,2SB744A 3.000 1.800 3.400 2.200 7.800 8.200	Original	2SD794/2SD794A O-126C O-126C 2SB744 2SB744A 2SD794 2SD794A 100mA transistor 4040 3400 transistor 2sd794 transistor transistor 2sd794 ic 4040	PDF

Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456767 1234567675 345676758 RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	952-954MHz RA03M9595M RA03M9595M	PDF
RA07M1317MS Abstract: C 829 transistor Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456764 1234567645 34567645829 829 OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier	Original	135-175MHz RA07M1317MSA 175-MHz RA07M1317MSA RA07M1317MS C 829 transistor	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367589 123456367589 RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the	Original	806-869MHz 34dBm RA02M8087MD 34dBm 300mA -26dBc 31dBm RA02M8087MD	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123453637 1234536375 345363758 RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module	Original	66-88MHz RA07M0608M 88-MHz RA07M0608M	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456364 1234563645 3456364578 RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the	Original	400-430MHz 38dBm RA03M4043MD 38dBm 19dBm -25dBc 35dBm RA03M4043MD	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123454673 1234546735 3454673589 RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M3540MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the	Original	350-400MHz 38dBm RA03M3540MD 38dBm 19dBm -25dBc 35dBm RA03M3540MD	PDF
HS2907A Abstract: JANTX2N2907AUB JANTX2N2907A JANTXV2N2907A JANTXV2N2907AUB JANTXV2N2907 4VDC60 JANTX2N2907 HS2907 Text: JANTXV2N2907AUB A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 HSOT PRODUCT SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n I.A.W. MIL-PRF-19500/291 n SMALL OUTLINE SURFACE MOUNT PACKAGE n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS	Original	JANTXV2N2907AUB MIL-PRF-19500/291 10Vdc, 100kHz< HS2907A JANTX2N2907AUB JANTX2N2907A JANTXV2N2907A JANTXV2N2907AUB JANTXV2N2907 4VDC60 JANTX2N2907 HS2907	PDF
BUZ10A Abstract: automatic motor for reverse and forward guided vehicle 30C17 Text: 7=52=1237 w # Q02^b4b 2 S G S -T H O M S O N k 7 # BUZ10A [M lD { g ^ Q iL [l ïï^ © lD (g i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S- TH OMSO N 30E TYPE V qss ^ ds (on) Id B U Z 10 A 50 V 0 .1 2 Î2 17 A 3> • H IG H S P E E D S W IT C H IN G	OCR Scan	BUZ10A BUZ10A automatic motor for reverse and forward guided vehicle 30C17	PDF
2N2484 Abstract: No abstract text available Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2484 Features 60 Volts 50mAmps • Meets MIL-S-19500/376 • Collector-Base Voltage 60V • Collector Current: 50 mA NPN BIPOLAR TRANSISTOR Maximum Ratings RATING Collector-Emitter Voltage	Original	2N2484 50mAmps MIL-S-19500/376 MSC0280A 2N2484	PDF
transistor WL 431 Abstract: 2N700A BUV pnp 50a MW1131 Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,	OCR Scan	MIL-S-19500/123A -S-19500/123 2N700A -65to 70MHz 5961-A085 transistor WL 431 2N700A BUV pnp 50a MW1131	PDF

TRANSISTOR 45 F 123 Search Results

TRANSISTOR 45 F 123 Result Highlights (5)

TRANSISTOR 45 F 123 Datasheets Context Search

200E

200E

BFP520

ev 2816

VPS05605

IC 7481 pin configuration

IC 7481 pin configuration

BFP520 application notes

AM1214-300

transistor b 1238

AM81214-300

AM1214-300

transistor D613 equivalent

transistor 4040

Untitled

RA07M1317MS

Untitled

Untitled

Untitled

Untitled

HS2907A

BUZ10A

2N2484

transistor WL 431