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    TRANSISTOR 50GHZ Search Results

    TRANSISTOR 50GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 50GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SFT-9100

    Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
    Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE


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    PDF SFT-9200B 50GHz SFT-9200B 43Gb/s 40GbE, 100GbE SFT-9100 InP transistor HEMT sft 43 Sft9100 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise

    5HP ibm

    Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
    Text: IBM Microelectronics Blue Logic BiCMOS 5HP Technology SiGe BiCMOS process for high performance Highlights IBM Blue Logic BiCMOS 5HP is a unique and versatile process integrating a highperformance silicon germanium SiGe heterojunction bipolar transistor (HBT)


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    PDF 07G522035300* G522-0353-00 5HP ibm 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe

    60GHz transistor

    Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
    Text: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE


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    PDF SFT-9400B 60GHz SFT-9400B 43Gb/s 40GbE, 100GbE 50GHz 60GHz transistor InP transistor HEMT SFT9400B OC-768 98T2 InP HBT transistor low noise

    Untitled

    Abstract: No abstract text available
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


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    PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS111011

    SGA1263Z

    Abstract: SGA1263
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


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    PDF SGA1263Z DCto4000MH SGA1263Z DCto4000MHz OT-363 50GHz DS111011 SGA1263

    SGA-1263Z

    Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


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    PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS100916 SGA-1263Z SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a

    MARKING HBT

    Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


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    PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 MARKING HBT SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor

    SGA-1263

    Abstract: SGA-1263Z BY 356
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


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    PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263 SGA-1263Z BY 356

    trace code marking RFMD

    Abstract: SGA-1263 SGA-1263Z
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


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    PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 trace code marking RFMD SGA-1263Z

    stacked transistors SOI RF

    Abstract: TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ
    Text: A Complementary Bipolar Technology on SOI Featuring 50GHz NPN and 35GHz PNP Devices for High Performance RF Applications S. Nigrin, M. C. Wilson, S. Thomas, S. Connor and P. H. Osborne Zarlink Semiconductor, Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.


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    PDF 50GHz 35GHz stacked transistors SOI RF TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ

    RF Micro Devices

    Abstract: No abstract text available
    Text: TA0001  TA0001 Advantages of HBT   1. High linearity 2. Very wide frequency response F max higher than 50GHz 3. High voltage breakdown greater than 20 volts 4. High gain per stage resulting in high efficiency designs 5. Very low parasitics resulting in high Q capacitors


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    PDF TA0001 50GHz RF Micro Devices

    sga8343z

    Abstract: SGA-3563Z SGA-4563Z SGL0363z SGA 4563Z sgl-0363z SGA-0163Z SGL-0363 JESD22-A104B SGA-8343Z
    Text: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGC-2363Z/2463Z/4363Z/4463Z SGL-0163Z/0263Z/0363Z


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    PDF SGA-5263Z SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGC-2363Z/2463Z/4363Z/4463Z SGL-0163Z/0263Z/0363Z RQR-103792 sga8343z SGA-3563Z SGA-4563Z SGL0363z SGA 4563Z sgl-0363z SGA-0163Z SGL-0363 JESD22-A104B SGA-8343Z

    A102 TRANSISTOR

    Abstract: SGA-4563Z SGA-2463Z sga-8343z JESD22-A103 SGA8343Z
    Text: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGL-0263Z/0163Z 303 S. Technology Ct, Broomfield CO, 80021


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    PDF SGA-5263Z SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGL-0263Z/0163Z RQR-103792 SGA-5263Z A102 TRANSISTOR SGA-4563Z SGA-2463Z sga-8343z JESD22-A103 SGA8343Z

    SGC-4563Z

    Abstract: sga8343z SGC4563 SGA-2163Z SGC4563Z SGA-5263Z SGA0363Z reliability testing report SGA-1163Z sga-8343z
    Text: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGC-2363Z/2463Z/4363Z/4463Z/4563Z SGL-0163Z/0263Z/0363Z


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    PDF SGA-5263Z SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGC-2363Z/2463Z/4363Z/4463Z/4563Z SGL-0163Z/0263Z/0363Z RQR-103792 SGC-4563Z sga8343z SGC4563 SGA-2163Z SGC4563Z SGA-5263Z SGA0363Z reliability testing report SGA-1163Z sga-8343z

    abstract of hartley oscillator

    Abstract: hartley oscillator MAX2837 The Modern Armstrong Regenerative Receiver modern and radar transmitters Atheros Communications Wimax DBS 3900 MAX2838 vco mmic 802.11g 802.11n RF Transceiver mimo
    Text: Maxim > App Notes > Signal Generation Circuits Wireless and RF Keywords: vco, rfic, rf, lo, pll, voltage controlled, oscillator, rf ics, rfics, oscillators, VCOs Dec 06, 2002 APPLICATION NOTE 1768 Tracking Advances in VCO Technology Abstract: This application note tracks the history of voltage-controlled oscillators VCOs since approximately


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    PDF MAX2754: MAX2820: MAX2900: com/an1768 AN1768, APP1768, Appnote1768, abstract of hartley oscillator hartley oscillator MAX2837 The Modern Armstrong Regenerative Receiver modern and radar transmitters Atheros Communications Wimax DBS 3900 MAX2838 vco mmic 802.11g 802.11n RF Transceiver mimo

    hartley oscillator

    Abstract: The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 max2115 history of varactor diode modern and radar transmitters 226 varactor hartley sa2400
    Text: SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Application Note 1768: Oct 21, 2002 Tracking Advances In VCO Technology Tracks the history of voltage-controlled oscillators VCOs since approximately 1910. Provides examples of VCO integration in RF ICs. Presents technology, performance


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    PDF MAX2622: MAX2624: MAX2750: MAX2753: MAX2754: MAX2820: MAX2900: com/an1768 hartley oscillator The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 max2115 history of varactor diode modern and radar transmitters 226 varactor hartley sa2400

    SGA-3563Z

    Abstract: SGA5263Z SGA-4563Z SGA-5263z A102 TRANSISTOR ESD test plan SGA-8343Z sga8343z SGA3563Z SGA-0363Z
    Text: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z SGL-0263Z/0163Z 303 S. Technology Ct, Broomfield CO, 80021


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    PDF SGA-5263Z SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z SGL-0263Z/0163Z RQR-103792 SGA-5263Z SGA-3563Z SGA5263Z SGA-4563Z A102 TRANSISTOR ESD test plan SGA-8343Z sga8343z SGA3563Z SGA-0363Z

    HBT 01 - 05

    Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
    Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna


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    PDF 90GHz, 90GHz HBT 01 - 05 dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G

    2N3904 TRANSISTOR using darlington amplifier

    Abstract: crystal 20Mhz of 2n3904 10mhz crystal oscillator 74LS04 as colpitts oscillator 74LS04 LT1034 20MHz quartz crystal crystal oscillator 4049 LT1011
    Text: Application Note 12 October 1985 Circuit Techniques for Clock Sources Jim Williams Almost all digital or communication systems require some form of clock source. Generating accurate and stable clock signals is often a difficult design problem. Quartz crystals are the basis for most clock sources. The


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    PDF 50ppm an25fa AN12-8 2N3904 TRANSISTOR using darlington amplifier crystal 20Mhz of 2n3904 10mhz crystal oscillator 74LS04 as colpitts oscillator 74LS04 LT1034 20MHz quartz crystal crystal oscillator 4049 LT1011

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ci sn7402

    Abstract: 10GHz OSCILLATOR pulse generator LT1017 failure rate LT1017 LM111 LT1011 Transistor 2N3866 1Hz-10MHz AM6012 LT1016CS8
    Text: r r m r LT1011/LTlOl 1A n TECHNOLOGY Voltage Com parator FCftTURCS D6SCRIPTIOI1 • Pin-Compatible with LM111 Series Devices ■ Guaranteed Max. 0.5mV Input Offset Voltage ■ Guaranteed Max. 25nA Input Bias Current ■ Guaranteed Max. 3nA Input Offset Current


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    PDF LM111 250ns LT1011/LT1011A LT1011 LM111. HP5082-2810 RL1123-4 1N4148 g10kt 2N3904 ci sn7402 10GHz OSCILLATOR pulse generator LT1017 failure rate LT1017 Transistor 2N3866 1Hz-10MHz AM6012 LT1016CS8

    ci sn7402

    Abstract: voltage controlled pulse width generator 1HZ-10MHZ 74121 application as pulse generator LT1016 ultra fast comparator application note LT1016CN 50GHz mosfet LT1016MJ LT1016CJ
    Text: _ LT1016 Ultra Fast Precision Comparator FCflTURCS DCSCRIPHOn • Ultra Fast 10ns typ ■ Operates Off Single +5V Supply, or ±5V ■ Complementary Output to TTL ■ Low Offset Voltage ■ No Minimum Input Slew Rate Requirement ■ No Power Supply Current Spiking


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    PDF LT1Q16 LT1016 LT1016 45-C/W 100-C/W ci sn7402 voltage controlled pulse width generator 1HZ-10MHZ 74121 application as pulse generator ultra fast comparator application note LT1016CN 50GHz mosfet LT1016MJ LT1016CJ

    voltage controlled pulse width generator

    Abstract: 2N2369
    Text: _ LT1016 Ultra Fast Precision Comparator FCflTURCS DCSCRIPHOn • Ultra Fast 10ns typ ■ Operates Off Single +5V Supply, or ±5V ■ Complementary Output to TTL ■ Low Offset Voltage ■ No Minimum Input Slew Rate Requirement ■ No Power Supply Current Spiking


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    PDF LT1016 LT1016 LT1016. voltage controlled pulse width generator 2N2369

    ac-dc voltage regulator using SCR circuit diagram

    Abstract: intel 2816 eeprom LT1072 design manual AN3113 AN3116 AN3115 wv4 diode TRANSISTOR C106B intel 28F256 scr C106B
    Text: rr u m Application Note 31 TECHNOLOGY February 1989 Linear Circuits for Digital Systems Some Affable Analogs for Digital Devotees Jim Williams The pristine, regimented symmetry of digital circuit boards is occasionally interrupted by an irregular huddle of linear components. These aberrants are tolerated be­


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    PDF LT1070 50/iA AN-19, AN31-16 ac-dc voltage regulator using SCR circuit diagram intel 2816 eeprom LT1072 design manual AN3113 AN3116 AN3115 wv4 diode TRANSISTOR C106B intel 28F256 scr C106B