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    TRANSISTOR 58W Search Results

    TRANSISTOR 58W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 58W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    transistor* igbt 70A 300 V

    Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
    Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching


    Original     		IRG4PSH71UDPbF 40kHz 200kHz Super-247 O-247 IRFPS37N50A IRFPS37N50A transistor* igbt 70A 300 V 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp diode 70A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching


    Original     		IRG4PSH71UDPbF 40kHz 200kHz Super-247 O-247 IRFPS37N50A IRFPS37N50A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		IRG4PSH71UPbF 40kHz 200kHz Super-247 O-247 pow74AA) IRFPS37N50A IRFPS37N50A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		1681A IRG4PSC71U 40kHz 200kHz Super-247 O-247 twic10) PDF

    Rectifier, 70A, 1000V

    Abstract: IRFPS37N50A IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w
    Text: PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		IRG4PSH71U 40kHz 200kHz Super-247 O-247 Super-247TM O-274AA IRFPS37N50A IRFPS37N50A O-247TM Rectifier, 70A, 1000V IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w PDF

    IRG4PSC71U

    Abstract: T5 transistor TO-247
    Text: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		1681A IRG4PSC71U 40kHz 200kHz Super-247 O-247 IRG4PSC71U T5 transistor TO-247 PDF

    IRG4PSC71U

    Abstract: No abstract text available
    Text: PD - 91681 IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		IRG4PSC71U 40kHz 200kHz Super-247 O-247 Super-247 IRG4PSC71U PDF

    IRG4PSH71UD

    Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
    Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		IRG4PSH71UD 40kHz 200kHz Super-247 O-247 IRG4PSH71UD IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		IRG4PSH71UD 40kHz 200kHz Super-247 O-247 PDF

    st l6574

    Abstract: ignition IGBTS L6561 AN966 L6574 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		AN993 L6574 L6561 st l6574 ignition IGBTS L6561 AN966 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC PDF

    transistor 58w

    Abstract: IRG4PSC71K
    Text: PD - 91683 IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for


    Original     		IRG4PSC71K O-247 O-264, O-247, O-264 Super-247 transistor 58w IRG4PSC71K PDF

    ir emitter

    Abstract: IRG4PSH71K
    Text: PD - 91687 IRG4PSH71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for


    Original     		IRG4PSH71K O-247 O-264, O-247, O-264 Super-247 ir emitter IRG4PSH71K PDF

    ELECTRONIC BALLAST transistor DIAGRAM

    Abstract: AN993 L6561 L6574 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		AN993 L6574 L6561 ELECTRONIC BALLAST transistor DIAGRAM AN993 L6561 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol


    Original     		91683B IRG4PSC71K O-247 O-264, O-247, O-264 Super-247Â O-274AA O-274AA) PDF

    SCHEMATIC IGNITION WITH IGBTS

    Abstract: ELECTRONIC BALLAST 6 LAMP SCHEMATIC Ballast driver L6574 Electronic ballast 58W L6561 application note STP6NB50 Capacitive discharge ignition L6561 AN 600V igbt dc to dc boost converter electronic ballast
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by F. Sandrini & U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		AN993 L6574 L6561 SCHEMATIC IGNITION WITH IGBTS ELECTRONIC BALLAST 6 LAMP SCHEMATIC Ballast driver L6574 Electronic ballast 58W L6561 application note STP6NB50 Capacitive discharge ignition L6561 AN 600V igbt dc to dc boost converter electronic ballast PDF

    T5 transistor TO-247

    Abstract: IRG4PSH71K mj 340
    Text: PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for


    Original     		1687A IRG4PSH71K O-247 O-264, O-247, O-264 T5 transistor TO-247 IRG4PSH71K mj 340 PDF

    IRFPS37N50A

    Abstract: IRG4PSC71K
    Text: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol


    Original     		91683B IRG4PSC71K O-247 O-264, O-247, O-264 Super-247 O-274AA O-274AA) IRFPS37N50A IRG4PSC71K PDF

    Electronic ballast 58W

    Abstract: st l6574 L6561 AN966 L6574 ignition IGBTS 10 amp L6574 application Ballast driver L6574 ignition IGBTS L6561 AN993
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		AN993 L6574 L6561 Electronic ballast 58W st l6574 L6561 AN966 ignition IGBTS 10 amp L6574 application Ballast driver L6574 ignition IGBTS L6561 AN993 PDF

    SCHEMATIC IGNITION WITH IGBTS

    Abstract: ELECTRONIC ballast choke details L6561 AN966 ballast diagram SCHEMATIC IGNITION iGBT Electronic ballast 58W operational amplifier e25/13/7 ELECTRONIC BALLAST 2 LAMP SCHEMATIC st l6574
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by F. Sandrini, U. Moriconi and I. Dal Santo The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		AN993 L6574 L6561 SCHEMATIC IGNITION WITH IGBTS ELECTRONIC ballast choke details L6561 AN966 ballast diagram SCHEMATIC IGNITION iGBT Electronic ballast 58W operational amplifier e25/13/7 ELECTRONIC BALLAST 2 LAMP SCHEMATIC st l6574 PDF

    SCHEMATIC IGNITION WITH IGBTS

    Abstract: L6561 AN966 st l6574 arc lamp power supply wiring diagram resonant half bridge ballast schematic ignition IGBTS ELECTRONIC BALLAST LAMP SCHEMATIC operational amplifier Electronic ballast 58W ELECTRONIC BALLAST 2 LAMP SCHEMATIC
    Text: AN993 APPLICATION NOTE  ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by F. Sandrini, U. Moriconi and I. Dal Santo The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		AN993 L6574 L6561 SCHEMATIC IGNITION WITH IGBTS L6561 AN966 st l6574 arc lamp power supply wiring diagram resonant half bridge ballast schematic ignition IGBTS ELECTRONIC BALLAST LAMP SCHEMATIC operational amplifier Electronic ballast 58W ELECTRONIC BALLAST 2 LAMP SCHEMATIC PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 PDF

    2N08L50

    Abstract: 58W smd smd 58w Q67060-S6062 marking code 58W 04
    Text: SPD22N08S2L-50 Preliminary data OptiMOS â Power-Transistor Feature • N-Channel Product Summary • Enhancement mode VDS 75 V • Logic Level RDS on 50 mΩ • 175°C operating temperature ID 22 A • Avalanche rated P-TO-252-3-11 • dv/dt rated Type


    Original     		SPD22N08S2L-50 P-TO-252-3-11 Q67060-S6062 2N08L50 2N08L50 58W smd smd 58w Q67060-S6062 marking code 58W 04 PDF