IPD320N20N3
Abstract: marking EB5
Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD320N20N3
7865AE5
marking EB5
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IPD600N25N3 G
Abstract: No abstract text available
Text: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD600N25N3
7865AE5
IPD600N25N3 G
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IPB027N10N3
Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
Text: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPB027N10N3
7865AE5
marking 1D
55B5
Q451
EB5 MARKING
marking G9
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4b 5c marking
Abstract: No abstract text available
Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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BSC360N15NS3
4b 5c marking
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Untitled
Abstract: No abstract text available
Text: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5 Q)2 6B55<514@<1D9>7+?",3?=@<91>D
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IPA075N15N3
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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CCD MARKING
Abstract: No abstract text available
Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $
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IPA075N15N3
CCD MARKING
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marking 9D
Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
Text: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPA086N10N3
7865AE5
marking 9D
marking eb5
diode 1D
marking g9
55B5
7865a
DIODE Z6
Diode 9H
DIODE ED 99
package marking 5f
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marking EB5
Abstract: diode marking eb5 marking G9
Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )*&* Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPD122N10N3
7865AE5
marking EB5
diode marking eb5
marking G9
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IPB065N15N3
Abstract: 5F040 ED 05 Diode marking EB5
Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R , ? >=1H-( .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPB065N15N3
7865AE5
5F040
ED 05 Diode
marking EB5
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Q451
Abstract: 95B9 C19B marking EB5 d91d package marking 5f
Text: IPD180N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H-( )0 Y" I ,+ 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPD180N10N3
7865AE5
Q451
95B9
C19B
marking EB5
d91d
package marking 5f
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Untitled
Abstract: No abstract text available
Text: IPB027N10N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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IPB027N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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Untitled
Abstract: No abstract text available
Text: BSC360N15NS3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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BSC360N15NS3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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BC807-40
Abstract: 5B1 SOT-23 BC807-16 BC807-25
Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO
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BC807-16/
BC807-25
BC807-40
OT-23
BC807-16/BC807-25
OT-23
BC807-40
5B1 SOT-23
BC807-16
BC807-25
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Untitled
Abstract: No abstract text available
Text: IPA086N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H 0&. Y I9 ,- 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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IPA086N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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d5cd
Abstract: IPI024N06N3 G
Text: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *& Y" )*( 6
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IPB021N06N3
IPI024N06N3
IPP024N06N3
d5cd
IPI024N06N3 G
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IPB029N06N3G
Abstract: No abstract text available
Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *&1 Y" *(
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IPB029N06N3
IPI032N06N3
IPP032N06N3
IPB029N06N3G
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55B5
Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Text: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#
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IPB036N12N3
65AE5
55B5
IPB036N12N
marking eb5
Diode 9H
diode 1D
marking G9
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marking EB diode
Abstract: Q451 ee 19 8b qg
Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H, & Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,
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IPP057N08N3
IPI057N08N3
IPB054N08N3
marking EB diode
Q451
ee 19 8b qg
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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jb transistor
Abstract: 2SC2356 374C
Text: h'UdlTSU niC R O ELEC T R O N IC S "37 DE | 3 7 4 ‘ì 7 t . E □□□1751 FMICROELECTRONICS U JIT S U 2SC2356 SILICON HIGH SPEED TRIPLE DIFFUSED ^ NPN POWER TRANSISTOR 10 AMP, 400 VOLT r- J3-/J 3 7 4 9 7 1>2 FUJITSU MICROELECTRONICS 37C 01751 ABSOLUTE MAXIMUM RATINGS
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374T7bE
2SC2356
O-220
jb transistor
2SC2356
374C
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ceramic disc capacitor 100nf 104
Abstract: C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE
Text: N AMER P H I L I P S / D I S C R E T E bTE D I Philips Semiconductors ÜET1 7 1 E 7 fl B A P X BLV97CE Data sheet status bbSBTBl Product specification UHF power transistor date of issue March 1993 FEATURES QUICK REFERENCE DATA • Internal input matching to achieve
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BLV97CE
bbS3T31
OT171
ceramic disc capacitor 100nf 104
C1-C18
TT 2222 npn
capacitor 100nf multilayer
SOT171
transistor tt 2222
BLV97CE
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