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    TRANSISTOR 6 MHZ Search Results

    TRANSISTOR 6 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic


    Original     		PDF BFR93A BFT93. MSB003 R77/02/pp13

    Untitled

    Abstract: No abstract text available
    Text: BLF3G21-6 UHF power LDMOS transistor Rev. 2 — 11 April 2013 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance


    Original     		PDF BLF3G21-6 ACPR600k

    smd code HF transistor

    Abstract: BLF3G21-6
    Text: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance


    Original     		PDF BLF3G21-6 ACPR600k BLF3G21-6 smd code HF transistor

    10A060

    Abstract: 20989 78561 MAG 1832 55FT
    Text: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10A060 10A060 20989 78561 MAG 1832 55FT

    3F2 SMD Transistor

    Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor


    Original     		PDF BFR93A BFT93. BFR93A MSB003 3F2 SMD Transistor smd code marking rf ft sot23 SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335

    MBB264

    Abstract: BFR91A transistor datasheet transistor No bfr91a BFR91A transistor marking R2p BFR93A BFT93 MSB003 transistor BFR93A BFR91A transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor


    Original     		PDF BFR93A BFT93. MSB003 SCA55 127127/00/02/pp12 MBB264 BFR91A transistor datasheet transistor No bfr91a BFR91A transistor marking R2p BFR93A BFT93 MSB003 transistor BFR93A BFR91A transistor

    1417 transistor

    Abstract: max 1417 1417-6A
    Text: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications


    Original     		PDF 417-6A 417-6A 1417 transistor max 1417 1417-6A

    2224-6L

    Abstract: No abstract text available
    Text: 2224-6L 6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz GENERAL DESCRIPTION The 2224-6L is a COMMON BASE transistor capable of providing 6 Watts, Class C output power over the band 2200-2400 MHz. The transistor includes input prematching for full Broadband capability. Gold metalization and


    Original     		PDF 2224-6L 2224-6L

    BFG94

    Abstract: MBB780 TRANSISTOR HANDBOOK MBB788
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain


    Original     		PDF BFG94 OT223 MSB002 OT223. BFG94 MBB780 TRANSISTOR HANDBOOK MBB788

    transistor Y4

    Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
    Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    Original     		PDF FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain


    Original     		PDF BFQ270 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor

    transistor marking R2p

    Abstract: SOT23 R2P BFR91A transistor datasheet MBB264 BFR91A BFR93A BFT93 MSB003 transistor BFR93A MBG246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain


    Original     		PDF BFR93A BFT93. MSB003 R77/02/pp13 transistor marking R2p SOT23 R2P BFR91A transistor datasheet MBB264 BFR91A BFR93A BFT93 MSB003 transistor BFR93A MBG246

    BFG94

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN  Low noise figure 1 emitter


    Original     		PDF BFG94 OT223 MSB002 OT223. R77/02/pp15 BFG94

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.


    Original     		PDF OT-26 QW-R218-020

    transistor Y2

    Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
    Text: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors Supersot 6 Supersot6

    Transistor lm 358

    Abstract: lm 358 ic BC449
    Text: CRO DESCRIPTION BC449 NPN SILICON TRANSISTOR 0 4 .6 8 T O -92 F 0 .1 8 [ BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 3.58 (0.14) (0 . 18 ) r~


    OCR Scan     		PDF BC449 BC449 300mA 625mW 100mA Transistor lm 358 lm 358 ic

    BC449

    Abstract: Bc449 transistor
    Text: BC449 NPN SILICON TRANSISTOR DESCRIPTION 04.68 0.18 BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 (0.18) TO-92F -I— I- - 0.4 E B c \_ [(0 .0 1 6 )


    OCR Scan     		PDF BC449 O-92F 300mA 625mW 100mA 100MHz Bc449 transistor

    Transistor BFr 99

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Sem iconductors 1997 Oct 29 PHILIPS Philips Semiconductors Product specification NPN 6 GHz wideband transistor


    OCR Scan     		PDF BFR93A BFR93A MSB003 127127/00/02/pp12 Transistor BFr 99

    PTB 20181

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20181 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output power


    OCR Scan     		PDF 915-960MHz) PTB 20181

    transistor g4c

    Abstract: No abstract text available
    Text: S G S-THOMSON G4C D 1 :7^2*1237 ODOOGSH 4 SOLID STATE MICROW AVE SD1409 THOMSON-CSF COMPONENTS CORPORATION ; M ontgom eryvH ie, P A 1 8 9 3 6 • {2 1 5 3 6 2 -8 5 0 0 ■ TW X 5 1 0 -6 6 1 -7 2 9 9 800 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1409 transistor is a common base silicon epitaxial planar transis­


    OCR Scan     		PDF SD1409 SD1409 transistor g4c

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    OCR Scan     		PDF FMB1020 300mA. 10OuA 100mA 150mA 200mA, 100MHz 10OuA, fmb1020

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON PTB 20051 6 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • The 20051 is a class A, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14651513 MHz frequency band. It is rated at 6 Watts minimum


    OCR Scan     		PDF 40rrA 270rrA 40ttA

    PTB20144

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20144 6 Watts, 915 - 960 MHz Cellular Radio RF Power Transistor Description Key Features • • • • The 20144 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF