TRANSISTOR 6108 Search Results

TRANSISTOR 6108 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 6108 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 61084 Mii SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (2N2222AUA) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package	Original	2N2222AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2222AUA	PDF
2N2222AUA Abstract: "PNP Transistor" Text: 61084 Mii SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (2N2222AUA) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package	Original	2N2222AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2222AUA "PNP Transistor"	PDF
transistor 45 f 122 Abstract: No abstract text available Text: 61083 Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUA) Features: Applications: • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package MIL-PRF-19500 screening available	Original	2N2907AUA) MIL-PRF-19500 MIL-PRF-19500. 150mA, 2N2907AUA, transistor 45 f 122	PDF
transistor 45 f 122 Abstract: 2N2907AUA "PNP Transistor" 60v small signal transistor surface mount transistor 8 Text: 61083 Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUA) Features: Applications: • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package MIL-PRF-19500 screening available	Original	2N2907AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2907AUA, transistor 45 f 122 2N2907AUA "PNP Transistor" 60v small signal transistor surface mount transistor 8	PDF
2N2907AUB Abstract: optoelectronic ic "PNP Transistor" Text: 61089 Features: Applications: • • • • • • • • • Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUB) Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged	Original	2N2907AUB) OT-23 MIL-PRF-19500 2N2907AUB optoelectronic ic "PNP Transistor"	PDF
2N2907AUB Abstract: No abstract text available Text: 61089 Features: Applications: • • • • • • • • • Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUB) Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged	Original	2N2907AUB) OT-23 MIL-PRF-19500 2N2907AUB	PDF
CEF10N4 Abstract: No abstract text available Text: CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 450V ,5.6A ,RDS ON = 700m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole.	Original	CEF10N4 O-220F O-220F CEF10N4	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
field-effect transistors Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684 Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .	OCR Scan	2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684	PDF
LB 122 transistor Abstract: 2N2222AUA Text: 61084 ms- 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed	OCR Scan	2N2222AUA MIL-S-19500 100MHz 100kHz 150mA, 300ns, LB 122 transistor	PDF
Untitled Abstract: No abstract text available Text: s tim m m an A M P com pany Radar Pulsed Power Transistor, 100W, 3jis Pulse, 30% Duty 1 .1 -1.3 GHz PH1113-100 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry	OCR Scan	PH1113-100 TT5QM50A ATC100A	PDF
Untitled Abstract: No abstract text available Text: MS- 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61083 OPTOELECTRONIC PRODUCTS DIVISION Features — Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available PIN 1 IDENTIFIER	OCR Scan	2N2907AUA Mil-S-19500 2N2907AUA lc-50mA, 100kHz lc-150mA, lBl-15mA VCE-10V, 150mA,	PDF
2N2907AUB Abstract: No abstract text available Text: jim»- 2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61089 Features OPTOELECTRONIC PRODUCTS DIVISION ORIENTATION KEY Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 packaged	OCR Scan	2N2907AUB OT-23 MIL-S-19500 500mA, VCE-10V, ic-50mA, 100kHz	PDF

Untitled Abstract: No abstract text available Text: 61083 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 0.225 5.72 0.215 (5.46) Features • • • • jns*- Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available	OCR Scan	2N2907AUA Mil-S-19500 2N2907AUA 14ERISTICS VCE-10V, E-20V, lc-50mA, f-100kHz 100kHz 100kHz	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
VQ1001 Abstract: No abstract text available Text: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7	OCR Scan	VQ1001 VQ1001J VQ1001P 14-PIN VNDQ03	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF
smp30n10 Abstract: No abstract text available Text: Tem ic S ilicon * _ SMP30N10 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( S ) I d (A) 100 0.060 30 TO-220AB O DRAIN connected to TAB G D S Top View N-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)	OCR Scan	SMP30N10 O-220AB P-36853--Rev. smp30n10	PDF
transistor tt 2247 Abstract: No abstract text available Text: AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T fw l HEWLETT A"KM PACKARD Features • • • • • 85 Plastic Package Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.9 dB typical at 2.0 GHz High Associated Gain: 16.5 dB typical at 1.0 GHz	OCR Scan	AT-60585 transistor tt 2247	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz	OCR Scan	l4475fl4 AT-60585	PDF
f25n06l Abstract: transistor marking rip RFP25N06L F25N06 transistor l 2 Text: RFP25N06L {£} H A R R IS August 1991 N-Channel Logic Level Enhancem ent-M ode Power Field-Effect Transistor L2 FET F e a tu re s • Package TO-220AB TOP VIEW 25A , 60 V • rDS(ON) = 0.085f2 DRAIN (FLANGE) • Design O p tim ized for 5V G ate Drives u	OCR Scan	RFP25N06L O-220AB 085f2 FP25N06L f25n06l transistor marking rip RFP25N06L F25N06 transistor l 2	PDF
transistor tic 106 N Abstract: No abstract text available Text: • n 1302571 » 00547^7 4T0 ■ « August 1991 HAS R F P 2 5 N 6 L N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistor L2FET Features Package • 25A, 60V • rDS(ON) = 0 .0 8 5 0 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits	OCR Scan	RFP25N06L 92CS-37075 461CF? RFP25N06L AN7254 AN-7260. transistor tic 106 N	PDF

TRANSISTOR 6108 Search Results

TRANSISTOR 6108 Result Highlights (5)

TRANSISTOR 6108 Datasheets Context Search

Untitled

2N2222AUA

transistor 45 f 122

transistor 45 f 122

2N2907AUB

2N2907AUB

CEF10N4

2sb504

2N2222A 338

field-effect transistors

LB 122 transistor

Untitled

Untitled

2N2907AUB

Untitled

Transistor 2SA 2SB 2SC 2SD

ksd 302 250v, 10a

VQ1001

JE1100

smp30n10

transistor tt 2247

Untitled

f25n06l

transistor tic 106 N