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    TRANSISTOR 625 Search Results

    TRANSISTOR 625 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 625 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		STC2907A 625mW PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage: Vces = 30V *Collector Dissipation : Pc mas = 625 mW SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )


    Original     		MMBTA13 MMBTA13 OT-23 100mA 100mA 100MHz PDF

    pin configuration transistor 2n4403

    Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 2N4401 SOT-23 2N4403
    Text: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		2N4403 2N4401 OT-23 MMBT4403. 2N4403-BUs D-74025 01-Sep-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 SOT-23 2N4403 PDF

    PZTA94G-AA3-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number


    Original     		PZTA94 -400V 625mW PZTA94L-AA3-R PZTA94G-AA3-R OT-223 QW-R207-026 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		MPSA92M -300V 625mW CHSA92M PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		MPSA94 -400V 625mW QW-R201-021 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		MPSA94 -400V 625mW PDF

    KSP2907a TRANSISTOR PNP

    Abstract: KSP2907A transistor ksp2907a
    Text: KSP2907A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 60V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		KSP2907A 625mW KSP2907 -10mA, KSP2907a TRANSISTOR PNP KSP2907A transistor ksp2907a PDF

    2n4401

    Abstract: 2N4400 st2n4401
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2N4400 2N4401 625mW 100MHz 100MHz, 150mA, 2n4401 st2n4401 PDF

    2N4403

    Abstract: transistor 2n4403 equivalent 2N4402
    Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2N4402 2N4403 625mW 150mA, 100MHz 140MHz, 2N4403 transistor 2n4403 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE


    Original     		2N5401 -150V 625mW QW-R201-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSP2222 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 30V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		KSP2222 625mW PDF

    transistor 2n4403 equivalent

    Abstract: 2N4403 transistor 2n4403 datasheet transistor 2n4403 2N4402 PNP 2N4403
    Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2N4402 2N4403 625mW 150mA, 100MHz 140MHz, transistor 2n4403 equivalent 2N4403 transistor 2n4403 datasheet transistor 2n4403 PNP 2N4403 PDF

    st2n4401

    Abstract: 2N4401 2N4400 ic CD4081 pin diagram datasheet 2n4401 s
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2N4400 2N4401 625mW 100MHz 100MHz, 150mA, st2n4401 2N4401 ic CD4081 pin diagram datasheet 2n4401 s PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=20V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Emitter Voltage Emitter-Base Voltage


    Original     		KSP12 625mW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		2N6515 625mW PDF

    ksp2907

    Abstract: No abstract text available
    Text: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 40V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		KSP2907 625mW ksp2907 PDF

    KSP8098

    Abstract: No abstract text available
    Text: KSP8098/8099 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= KSP8098: 60V KSP8099: 80V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage : KSP8098


    Original     		KSP8098/8099 KSP8098: KSP8099: 625mW KSP8098 KSP8099 KSP8099 KSP8098 PDF

    KSP8598

    Abstract: KSP8599
    Text: KSP8598/8599 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= KSP8598: 60V KSP8599: 80V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage : KSP8598


    Original     		KSP8598/8599 KSP8598: KSP8599: 625mW KSP8598 KSP8599 KSP8598 KSP8599 PDF

    MPSA13L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free


    Original     		MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K QW-R208-001 MPSA13L PDF

    2N4401

    Abstract: 2N4400 2N4400 2N4401 st2n4401 2N4401 - TRANSISTOR transistor 2n4401 equivalent ST 024 NPN transistor 2n4400
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC max = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2N4400 2N4401 Sino-N4400 2N4400 2N4401 2N4400 2N4401 st2n4401 2N4401 - TRANSISTOR transistor 2n4401 equivalent ST 024 NPN transistor 2n4400 PDF

    2N4403

    Abstract: 2N4402 2N4402 2N4403 PNP 2N4403 transistor 2n4403 Transistor 2N4402 st2n4403
    Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC max = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2N4402 2N4403 2N4403 2N4402 2N4403 PNP 2N4403 transistor 2n4403 Transistor 2N4402 st2n4403 PDF

    2N4403

    Abstract: 2N4402 2N4403 semtech transistor 2N4403
    Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC max = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2N4402 2N4403 2N4403 2N4403 semtech transistor 2N4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSP42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=KSP42: 300V KSP43: 200V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector Base Voltage : KST42


    Original     		KSP42/43 KSP42: KSP43: 625mW KST42 KST43 KST43 PDF