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    TRANSISTOR 6NC Search Results

    TRANSISTOR 6NC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AOWF4S60

    Abstract: AOW4S60
    Text: AOW4S60/AOWF4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOW4S60 & AOWF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOW4S60/AOWF4S60 AOW4S60 AOWF4S60 O-262 O-262F AOW4S60 AOWF4S60 PDF

    Untitled

    Abstract: No abstract text available
    Text: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB


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    ILP03N60, ILB03N60 ILD03N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-252-3-1 O-252AA) ILP03N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOW4S60/AOWF4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOW4S60 & AOWF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOW4S60/AOWF4S60 AOW4S60 AOWF4S60 O-262 O-262F AOWF4S60 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4S60/AOI4S60/AOU4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOD4S60/AOI4S60/AOU4S60 AOD4S60 AOI4S60 AOU4S60 O251A PDF

    Untitled

    Abstract: No abstract text available
    Text: AOT4S60/AOB4S60/AOTF4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOT4S60/AOB4S60/AOTF4S60 AOT4S60 AOB4S60 AOTF4S60 AOT4S60L AOB4S60L AOTF4S60L O-220 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4S60/AOI4S60/AOU4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOD4S60/AOI4S60/AOU4S60 AOD4S60 AOI4S60 AOU4S60 1TO251 O251A PDF

    AOB4S60

    Abstract: No abstract text available
    Text: AOT4S60/AOB4S60/AOTF4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOT4S60/AOB4S60/AOTF4S60 AOT4S60 AOB4S60 AOTF4S60 AOT4S60L AOB4S60L AOTF4S60L O-220 O-263 AOB4S60 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOT4S60/AOB4S60/AOTF4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOT4S60/AOB4S60/AOTF4S60 AOT4S60 AOB4S60 AOTF4S60 AOT4S60L AOB4S60L AOTF4S60L O-220 O-263 PDF

    aod4s60

    Abstract: aod4s
    Text: AOD4S60/AOI4S60/AOU4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    AOD4S60/AOI4S60/AOU4S60 AOD4S60 AOI4S60 AOU4S60 O251A AOD4S60 aod4s PDF

    ILA03N60

    Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
    Text: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


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    ILB03N60 P-TO-263-3-2 O-263AB) Q67040-S4627 ILA03N60 ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V PDF

    L03N60

    Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
    Text: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


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    ILA03N60, ILP03N60 ILD03N60 PG-TO-220-3-31 O-220 PG-TO-220-3-1 O-220AB) PG-TO-252-3-1 O-252AA) ILA03N60 L03N60 PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25 PDF

    ILA03N60

    Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
    Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


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    ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 ILA03N60 ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628 PDF

    Q67040-S4628

    Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
    Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


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    ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 Q67040-S4628 ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration PDF

    schematic diagram 48v bldc motor speed controller

    Abstract: irfb3306 smd diode marking BM 47 MAR 544 MOSFET TRANSISTOR TRANSISTOR SMD MARKING CODE lpw TMC603 Power MOSFET 50V 10A IN DPACK schematic diagram 48v dc motor speed controller marking code LPW SMD TRANSISTOR "Common rail"
    Text: TMC603 DATA SHEET V. 1.06 / 26. Mar. 2009 1 TMC603 – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features


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    TMC603 TMC603 schematic diagram 48v bldc motor speed controller irfb3306 smd diode marking BM 47 MAR 544 MOSFET TRANSISTOR TRANSISTOR SMD MARKING CODE lpw Power MOSFET 50V 10A IN DPACK schematic diagram 48v dc motor speed controller marking code LPW SMD TRANSISTOR "Common rail" PDF

    BZV55C12

    Abstract: No abstract text available
    Text: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features


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    TMC603A 2010-May-14) TMC603A TMC603 BZV55C12 PDF

    fuji capacitor

    Abstract: FA7729R FA7729 8 pin 4v power supply converter
    Text: FA7729R FUJI Power Supply Control IC FA7729R Application Note Feb-2004 Fuji Electric Device Technology Co., Ltd. Power Supply Application Division 1 Fuji Electric Device Technology FA7729R WARNING 1.This Data Book contains the product specifications, characteristics, data, materials, and structures as


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    FA7729R Feb-2004 fuji capacitor FA7729R FA7729 8 pin 4v power supply converter PDF

    7703V

    Abstract: No abstract text available
    Text: FA7703/04 Quality is our message FUJI Power Supply Control IC FA7703/04 Application Note June -2002 Fuji Electric Co., Ltd. Matsumoto Factory 1 FA7703/04 Quality is our message WARNING 1.This Data Book contains the product specifications, characteristics, data, materials, and structures as of


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    FA7703/04 2200pF V/100mA FA7703 4700pF V/500mA 0V/20mA 7703V PDF

    fa7703

    Abstract: IN26 IN114 TSSOP-16 2200P
    Text: FA7703/04 FA7703/7704 FUJI Power Supply Control IC DC/DC Power Supply control IC FA7703/7704 Application Note June-2010 Fuji Electric Systems Co.,Ltd. Fuji Electric Systems Co., Ltd. AN-057E Rev.1.0 Jun-2010 1 http://www.fujielectric.co.jp/fdt/scd/ FA7703/04


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    FA7703/04 FA7703/7704 June-2010 AN-057E Jun-2010 or10k V/100mA fa7703 IN26 IN114 TSSOP-16 2200P PDF

    6bp4

    Abstract: 358B 8 PIN IC 6BP40 062 JRC Edd 44 GS 358S DIP42S LC66404A LC66599 QIP48E
    Text: Ordering number : EN 3491A _CMOS LSI I L C 6 6 4 04 A ,6 6 4 0 6 A ,6 6 4 0 8 A No. 3491A 4K/6K /8K-B YTE ROM-CONTAINED SINGLE-CHIP 4-BIT MICROCOMPUTER FOR CONTROL-ORIENTED APPLICATIONS s 'S,. / / \Z General Description


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    LC66404A 6406A 6408A LC66404A, 6406A, 6408A 42-pin 12-bit 512x4-bit LC665XX 6bp4 358B 8 PIN IC 6BP40 062 JRC Edd 44 GS 358S DIP42S LC66599 QIP48E PDF

    SG723CJ

    Abstract: No abstract text available
    Text: SG723/SG723C SILICON PRECISION VOLTAGE REGULATOR LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES This monolithic voltage regulator is designed for use with either positive or negative supplies as a series, shunt, switching, or floating regulator with currents up to 150mA. Higher current requirements may be


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    SG723/SG723C 150mA. SG723L/683B SG723L SG723CJ PDF

    RM40 and RM50

    Abstract: RM699B RSR30 PIR6WB-1PS RS35 and RS50 PIR2M Modules A RM40 RM50 RM84 RM85 RM87 RS35 RS50
    Text: Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 410-112013-5M Printed November 2013 Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial


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    410-112013-5M UL508 0-960W RM40 and RM50 RM699B RSR30 PIR6WB-1PS RS35 and RS50 PIR2M Modules A RM40 RM50 RM84 RM85 RM87 RS35 RS50 PDF

    10w led diode

    Abstract: TGCL-153P
    Text: AL9910EV7 Triac Dimmable 120VAC Evaluation Board - Modification Guide - Date: August 3, 2012 This document contains Diodes confidential and proprietary information For Internal Use Only AL9910EV7 120VAC Dimmable Modification Guide August 2012 1. Standard Evaluation Board Schematic


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    AL9910EV7 120VAC AL9910EV7 120VAC MSS1278T-105KLB) AOD4S60) ES1G-13- 10w led diode TGCL-153P PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    PANASONIC PLC FPO

    Abstract: LX 5252 F ic MAX15046
    Text: 19-4719; Rev 1; 2/10 TION KIT EVALUA BLE IL AVA A 40V, High-Performance, Synchronous Buck Controller Features The MAX15046 synchronous step-down controller operates from a 4.5V to 40V input voltage range and generates an adjustable output voltage from 85% of the input


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    MAX15046 100kHz PANASONIC PLC FPO LX 5252 F ic PDF