NEC 2905
Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
NEC 2905
NEC 1357
2SC4228-T1
2SC4228-T2
transistor 936
sc 789 transistor
1357 transistor NEC
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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P364
Abstract: tyco igbt V23990-P364-F
Text: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P364-F
Tj150
D81359
P364
tyco igbt
V23990-P364-F
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NEC 2581
Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
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2SC4954
2SC4954-T1
NEC 2581
nec 258
2581 NEC
574 nec
2SC4954
2SC4954-T1
2SC4954-T2
26480
30460
NEC 821
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NEC 2581
Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
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2SC4954
2SC4954-T2
2SC4954-T1
NEC 2581
nec 2405
2581 NEC
zo 103 ma 75 607
30460
pulse 01940
9590
IC 2030 PIN CONNECTIONS
5598 transistor
2SC4954-T1
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ZXT10P12DE6
Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Text: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT10P12DE6
OT23-6
OT23-6
ZXT10P12DE6
ZXT10P12DE6TA
ZXT10P12DE6TC
Marking 717
DSA0037437
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nec 2532
Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain
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2SC5014
2SC5014)
2SC5014-T2
nec 2532
NEC JAPAN 282 110 01
NEC 282 185 01
816-102
2SC5014
2SC5014-T1
2SC5014-T2
NEC 2134 transistor
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BUX20
Abstract: bux 716 transistor BUX
Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection
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BUX20
CB-159
BUX20
bux 716
transistor BUX
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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transistor NEC D 822 P
Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
NEC D 986
transistor NEC B 617
transistor NEC D 587
r44 marking
transistor D 2624
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transistor NEC D 822 P
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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blw86
Abstract: 43120203664 BY206 431202036640 choke IEC134 pdst47q sot-123-2 ferroxcube wideband hf choke
Text: N AMER PHILIPS/DISCRETE bbSB'îai DDSTHbl 071 • APX BLW86 b'ïE D A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is
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BLW86
7Z77783
blw86
43120203664
BY206
431202036640 choke
IEC134
pdst47q
sot-123-2
ferroxcube wideband hf choke
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-200A/B
BUK456
-200A
-200B
T0220AB
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transistor D 716
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-200A/B
BUK456
-200A
-200B
T0220AB
transistor D 716
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking
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BUK482-200A
OT223
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transistor D 716
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking
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BUK482-200A
OT223
oni25
transistor D 716
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: BSS64 _ J V HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended for high-voltage general purpose and switching
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BSS64
100ified
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pulse 01940
Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2
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2SC4954
4954-T
sh527
pulse 01940
NEC IC D 553 C
5598 transistor
transistor D 2581
NEC 2581
30460
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Q 371 Transistor
Abstract: SOT-223 marking 717
Text: Central CZTA44HC Semiconductor Corp. SURFACE MOUNT NPN HIGH CURRENT HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA44HC type is a surface mount epoxy molded silicon pla nar epitaxial transistor designed for extremely high voltage and high current applications.
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CZTA44HC
OT-223
CP319
14-November
OT-223
Q 371 Transistor
SOT-223 marking 717
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