BLw76a
Abstract: BLW76 BD433 74412
Text: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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hb53T31
BLw76a
BLW76
BD433
74412
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR RT1P241C TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Un!t:mm OUTLINE DRAWING Mitsubishi RT1P241C is a one chip transistor with built-in bias resistor, NPN type is RT1N241C.
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RT1P241C
RT1P241C
RT1N241C.
SC-59
O-236
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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BLW77
Abstract: neutralization push-pull philips Trimmer 60 pf
Text: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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D0b3277
BLW77
7110flSh
7Z77473
7Z77475
BLW77
neutralization push-pull
philips Trimmer 60 pf
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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buk552
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK552-100A/B
BUK552
-100A
-100B
BUK552-1OOA/B
buk552
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TRIMMER cap no-2222 809 07015
Abstract: BD433 BLW77
Text: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am
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BLW77
TRIMMER cap no-2222 809 07015
BD433
BLW77
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BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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SC-70/SOT-323
Spa218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
level shifter 2N5401
2771 040 0002
MUN5214T1
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ • GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK552-100A/B
BUK552
-100A
PINNING-T0220AB
BUK552-1G0A/B
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transistor B 764
Abstract: transistor b 745 sot26 sot363 transistor 752 transistor transistor 778 D 756 transistor transistor 746 d 772 transistor
Text: Packaging Details Page D2P A K . DPAK - Rectifier. DPAK - Transistor.
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OT-223.
OT-323.
OT-343.
OT-363.
OT-523.
OT-563.
transistor B 764
transistor b 745
sot26 sot363 transistor
752 transistor
transistor 778
D 756 transistor
transistor 746
d 772 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.
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bbS3T31
2N3904
2N3906.
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •
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2SC5015
2SC5015-T1
2SC5015-T2
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,
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BUK453-100A/B
BUK473-100A/B
BUK473
-100A
-100B
PINNING-SOT186A
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transistor fn 155
Abstract: lr transistor t7 BU2525A BY228
Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
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BU2525A
0077fcj44
711Gfl2b
0077bi45
transistor fn 155
lr transistor t7
BY228
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NEC JAPAN 237 521 02
Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Text: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART
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2SC5015
2SC5015-T1
2SC5015-T2
05Special:
NEC JAPAN 237 521 02
3563 1231
2SC5014
2SC5015
2SC5015-T1
2SC5015-T2
t83 230 02
TD-7938
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transistor NEC D 882 p
Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •
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2SC5012
2SC5012-T1
2SC5012-T2
transistor NEC D 882 p
transistor NEC b 882 p
transistor NEC 882 p
transistor NEC b 882
nec d 882 p transistor
nec 358 amplifier
transistor NEC D 587
34077
6069 marking
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SIT Static Induction Transistor
Abstract: sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30
Text: NEW PRODUCTS UPDATE T O K lii Small-sized Static Induction Transistor SIT with high withstand voltage 'T - S I - i', led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high
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200ns)
35max.
TC-20
TC-30
E08-875-1479
2-26A
UD-04E
N920920P1
SIT Static Induction Transistor
sit transistor
"static induction transistor"
tokin sit transistor
tokin
Static Induction Transistor SIT
transistor sit
static induction transistor
STATIC INDUCTION tokin
TC-30
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3563 1231
Abstract: transistor NEC B 617 nec d 1590
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain
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2SC5015
2SC5015-T1
2SC5015-T2
3563 1231
transistor NEC B 617
nec d 1590
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nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
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2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
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BU2508AF
Abstract: transistor fn 155 lem la 100p TRANSISTOR BU2508AF by228 ph transistor A6t 45 700E-15 lem HA BY228 by228 -ph
Text: N AUER PHILIPS/DIS CR ET E hTE D • bbS3T31 00Efl345 OSD ■ APX Philips Semiconductors_ Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
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bb53T31
00Efl345
BU2508AF
OT199;
BU2508AF
transistor fn 155
lem la 100p
TRANSISTOR BU2508AF
by228 ph
transistor A6t 45
700E-15
lem HA
BY228
by228 -ph
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