Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 7S Search Results

    TRANSISTOR 7S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 7S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8ch pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
    Text: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array


    Original
    PDF TD62S× TD62M× TD62C× TB62/TD/ULN/ULQ D62598AP TD62601P TD62602P TD62603P TD62604P TD62703P 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7


    OCR Scan
    PDF DG17S24 2SC1944 2SC1944 27MHz, 27MHz

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array


    OCR Scan
    PDF MTE2075 14-Lead NTE2077 NTE2078, NTE2084 NTE2079 16-Lead NTE2080

    lem HA

    Abstract: transistor bu2520d BU2520D
    Text: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic


    OCR Scan
    PDF 002037b BU2520D lem HA transistor bu2520d BU2520D

    VF155

    Abstract: VF150 vf152 VF153 vf154 VF155-2 VF155-1 VF155B VF150-1 VF155A
    Text: m MATEC CORP/ VALPEY-FISHER SÔL.10S4 00QQ35L 7ST bME D IVPC OSCILLATORS TTL LOGIC HYBRID CRYSTAL C LO C K OSCILLATORS VF150 Series TTL Hybrid Crystal Clock Oscillators Valpey-Fisher’s VF150 series designates a family of oscillators compatible with transistor-transistor-logic circuitry often


    OCR Scan
    PDF 00QQ35L VF150 VF153-1 VF153C-1 VF153D-1 VF152A-1 VF152B-1 VF155 vf152 VF153 vf154 VF155-2 VF155-1 VF155B VF150-1 VF155A

    BLY94

    Abstract: philips bly94
    Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­


    OCR Scan
    PDF 002T75fl BLY94 7Z67S60 BLY94 philips bly94

    MN2488 equivalent

    Abstract: MN2488 transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746
    Text: SünñR pñ SPE C IFIC A TIO N S pp A SANKEN ELECTRIC CGMPANY, LTD. DEVICE TYPE NAME 3 ^ 7 - m n2488 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MN2488 1. mmwm Scope a }• 7 "s 7s & M N 2488 The present specifications shall apply to Sanken silicon power transistor type MN2488.


    OCR Scan
    PDF MN2488 MN2488 MN2488. SSE-21317 MN2488 equivalent transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746

    ASP-0910

    Abstract: 900 mhz frequency generator silicon bipolar transistor rf power amplifier
    Text: HEWLETT-PACKARD/ CMPNTS blE HEW LETT PA C K AR D m » • 44L+7S6M 4 ÛM ■ HPA ASP-0910 "IO Watt, 900 MHz Silicon Power Transistor Power Flange Features • • • • • • □ ÜO'iTbM Power Out: 10 Watts Common Base Class C Power Transistor Frequency: 800-960 MHz


    OCR Scan
    PDF M447Sft4 ASP-0910 ASP-0910 900 mhz frequency generator silicon bipolar transistor rf power amplifier

    transistor BD 110

    Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
    Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


    OCR Scan
    PDF fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524

    fmw5

    Abstract: No abstract text available
    Text: 'S'/7s $ / T r a n s i s t o r s h 7 UMW5N FMW5 UMW 5N/FMW 5 Kh Dual Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor —jfö'hitt-§-JtlISffl/General Small Signal Amp. • IM • ^W ^äsEI/Dim ensions Unit: mm 1) * - / \ " - 5. - i - J U 21B<7>


    OCR Scan
    PDF

    2DI75M-120

    Abstract: 1di200
    Text: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120


    OCR Scan
    PDF 2DI50M-120 2DI75M-120 2DI100M-120 2DI150M-120 1DI200M-120 1DI300M-120 T25C3 M2047 6DI15M-120 6DI30M-120 1di200

    carbon resistors

    Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
    Text: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear


    OCR Scan
    PDF e3lx13u 7Z77838 BLX13U BLX13C carbon resistors BLX13 philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor

    BUK455-60A

    Abstract: buk455
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK455-60A/B BUK455 T0220AB BUK455-60A

    R Y SMD TRANSISTOR

    Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
    Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.


    OCR Scan
    PDF BLT13 OT96-1 MAM227 OT96-1. R Y SMD TRANSISTOR 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y 7s $ /Transistors UMA10N/FMA1OA b ÿ s y Z Ç / Dual Mini-Mold Transistor 1 1 ° £ * y 7 » y i s - 1 M PNP y U □ > K ÿ > y 7 $ Epitaxal Planar PNP Silicon Transistor •f > / î —$ F ÿ'C A'/Inverter Driver 1 UMT SC-70) SMT (SC-59) i f ic 2


    OCR Scan
    PDF UMA10N/FMA1OA SC-70) SC-59) 200mW 200mW UMA10N/FMA10A -100m -100a

    buk564-60h

    Abstract: PD10g
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan
    PDF BUK564-60H SQT404 buk564-60h PD10g

    BUK437-500A

    Abstract: BUK437-500B buk437 S1216
    Text: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK437-500A BUK437-500B BUK437 -500A -500B M89-1142/RST BUK437-500A BUK437-500B S1216

    transistor BD 800

    Abstract: transistor BD 110
    Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


    OCR Scan
    PDF A235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 800 transistor BD 110

    BUK456

    Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
    Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan
    PDF 711062b D0b41Db BUK456-60A/B T0220AB BUK456 7110fi2b DDb411D BUK456-80A/B BUK456-60A BUK456-60B BUK456-80A

    BUK446-1000B

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK446-1000B OT186 OT186; BUK446-1000B

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan
    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    RU201

    Abstract: No abstract text available
    Text: RU201 S ~7 > v 7s $ /Transistors RU201 Transistor Unit Composite Transistor / \ * 7 7 7 7 > ~ ? / Buffer Amplifier • i+ÜB^tÜH/Dim ensions (Unit : mm) • ! 1) 1 $ 7 ? 7 i P 9 lllK ffllC , r t- iT (R i = R2= 4 7 k Q , R 3 = 1 .5 k Q )0 2) tu tu > 7 t UTt ef f l 7 $ Z 0


    OCR Scan
    PDF RU201 14/Electrlcal 100MHz RU201

    ST DARLINGTON TRANSISTOR

    Abstract: ULN2003 hfe 1976 Darlington pair IC single
    Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output d or n package (TOP VIEW) • High-Voltage Outputs . . . 100 V


    OCR Scan
    PDF SN75468, SN75469 SLRS023B 500-mA ULN2003A ULN2004A, SN75468 ST DARLINGTON TRANSISTOR ULN2003 hfe 1976 Darlington pair IC single