8ch pnp DARLINGTON TRANSISTOR ARRAY
Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Text: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array
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TD62S×
TD62M×
TD62C×
TB62/TD/ULN/ULQ
D62598AP
TD62601P
TD62602P
TD62603P
TD62604P
TD62703P
8ch pnp DARLINGTON TRANSISTOR ARRAY
pnp DARLINGTON TRANSISTOR ARRAY
ULN* PNP transistor array
PNP DARLINGTON SINK DRIVER
pnp darlington array
m54586p
pnp darlington array ULN
uln2803 to drive 7 segment display
ULS2003H
nec pa2003c
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7
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DG17S24
2SC1944
2SC1944
27MHz,
27MHz
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array
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MTE2075
14-Lead
NTE2077
NTE2078,
NTE2084
NTE2079
16-Lead
NTE2080
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lem HA
Abstract: transistor bu2520d BU2520D
Text: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
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002037b
BU2520D
lem HA
transistor bu2520d
BU2520D
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VF155
Abstract: VF150 vf152 VF153 vf154 VF155-2 VF155-1 VF155B VF150-1 VF155A
Text: m MATEC CORP/ VALPEY-FISHER SÔL.10S4 00QQ35L 7ST bME D IVPC OSCILLATORS TTL LOGIC HYBRID CRYSTAL C LO C K OSCILLATORS VF150 Series TTL Hybrid Crystal Clock Oscillators Valpey-Fisher’s VF150 series designates a family of oscillators compatible with transistor-transistor-logic circuitry often
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00QQ35L
VF150
VF153-1
VF153C-1
VF153D-1
VF152A-1
VF152B-1
VF155
vf152
VF153
vf154
VF155-2
VF155-1
VF155B
VF150-1
VF155A
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BLY94
Abstract: philips bly94
Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002T75fl
BLY94
7Z67S60
BLY94
philips bly94
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MN2488 equivalent
Abstract: MN2488 transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746
Text: SünñR pñ SPE C IFIC A TIO N S pp A SANKEN ELECTRIC CGMPANY, LTD. DEVICE TYPE NAME 3 ^ 7 - m n2488 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MN2488 1. mmwm Scope a }• 7 "s 7s & M N 2488 The present specifications shall apply to Sanken silicon power transistor type MN2488.
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MN2488
MN2488
MN2488.
SSE-21317
MN2488 equivalent
transistors MN2488
sanken power transistor MN2488
mn2488 transistor
MN2488 transistor equivalent
sanken lot number
sanken power transistor
MICA-14
G746
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ASP-0910
Abstract: 900 mhz frequency generator silicon bipolar transistor rf power amplifier
Text: HEWLETT-PACKARD/ CMPNTS blE HEW LETT PA C K AR D m » • 44L+7S6M 4 ÛM ■ HPA ASP-0910 "IO Watt, 900 MHz Silicon Power Transistor Power Flange Features • • • • • • □ ÜO'iTbM Power Out: 10 Watts Common Base Class C Power Transistor Frequency: 800-960 MHz
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M447Sft4
ASP-0910
ASP-0910
900 mhz frequency generator
silicon bipolar transistor rf power amplifier
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transistor BD 110
Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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fl235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 110
0437
Q62902-B62
transistor BD 524
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fmw5
Abstract: No abstract text available
Text: 'S'/7s $ / T r a n s i s t o r s h 7 UMW5N FMW5 UMW 5N/FMW 5 Kh Dual Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor —jfö'hitt-§-JtlISffl/General Small Signal Amp. • IM • ^W ^äsEI/Dim ensions Unit: mm 1) * - / \ " - 5. - i - J U 21B<7>
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2DI75M-120
Abstract: 1di200
Text: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120
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2DI50M-120
2DI75M-120
2DI100M-120
2DI150M-120
1DI200M-120
1DI300M-120
T25C3
M2047
6DI15M-120
6DI30M-120
1di200
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carbon resistors
Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
Text: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear
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e3lx13u
7Z77838
BLX13U
BLX13C
carbon resistors
BLX13
philips carbon film resistor
carbon resistor
RF amplifiers in the HF and VHF
A1E transistor
Philips Carbon Resistor
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BUK455-60A
Abstract: buk455
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-60A/B
BUK455
T0220AB
BUK455-60A
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R Y SMD TRANSISTOR
Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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BLT13
OT96-1
MAM227
OT96-1.
R Y SMD TRANSISTOR
2L smd transistor
AT 11-S-i
smd transistor 2T
SOT96-1
BLT13
D102
smd transistor nc 61
NCR100
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Untitled
Abstract: No abstract text available
Text: h 7 > y 7s $ /Transistors UMA10N/FMA1OA b ÿ s y Z Ç / Dual Mini-Mold Transistor 1 1 ° £ * y 7 » y i s - 1 M PNP y U □ > K ÿ > y 7 $ Epitaxal Planar PNP Silicon Transistor •f > / î —$ F ÿ'C A'/Inverter Driver 1 UMT SC-70) SMT (SC-59) i f ic 2
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UMA10N/FMA1OA
SC-70)
SC-59)
200mW
200mW
UMA10N/FMA10A
-100m
-100a
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buk564-60h
Abstract: PD10g
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK564-60H
SQT404
buk564-60h
PD10g
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BUK437-500A
Abstract: BUK437-500B buk437 S1216
Text: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK437-500A
BUK437-500B
BUK437
-500A
-500B
M89-1142/RST
BUK437-500A
BUK437-500B
S1216
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transistor BD 800
Abstract: transistor BD 110
Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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A235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 800
transistor BD 110
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BUK456
Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
D0b41Db
BUK456-60A/B
T0220AB
BUK456
7110fi2b
DDb411D
BUK456-80A/B
BUK456-60A
BUK456-60B
BUK456-80A
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BUK446-1000B
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK446-1000B
OT186
OT186;
BUK446-1000B
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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RU201
Abstract: No abstract text available
Text: RU201 S ~7 > v 7s $ /Transistors RU201 Transistor Unit Composite Transistor / \ * 7 7 7 7 > ~ ? / Buffer Amplifier • i+ÜB^tÜH/Dim ensions (Unit : mm) • ! 1) 1 $ 7 ? 7 i P 9 lllK ffllC , r t- iT (R i = R2= 4 7 k Q , R 3 = 1 .5 k Q )0 2) tu tu > 7 t UTt ef f l 7 $ Z 0
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RU201
14/Electrlcal
100MHz
RU201
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ST DARLINGTON TRANSISTOR
Abstract: ULN2003 hfe 1976 Darlington pair IC single
Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output d or n package (TOP VIEW) • High-Voltage Outputs . . . 100 V
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SN75468,
SN75469
SLRS023B
500-mA
ULN2003A
ULN2004A,
SN75468
ST DARLINGTON TRANSISTOR
ULN2003
hfe 1976
Darlington pair IC single
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