80846
Abstract: 022241 gummel
Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143
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OT-143
Q62702-F1611
900MHz
Dec-11-1996
80846
022241
gummel
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BC519
Abstract: 81a diode
Text: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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IPB070N06N
IPP070N06N
IPI070N06N
BC519
81a diode
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Diode Marking C.3
Abstract: da5 diode DA5 marking 5411C
Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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IPB070N06L
IPP070N06L
Diode Marking C.3
da5 diode
DA5 marking
5411C
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da5 diode
Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C
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IPP048N06L
IPB048N06L
da5 diode
BC519
DA QG
marking 1bc
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PDF
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DA5 diode
Abstract: No abstract text available
Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J Y" /0 6 P S ? @5A1C
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IPB110N06L
IPP110N06L
DA5 diode
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PDF
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5411C
Abstract: da5 diode BC519 58a4
Text: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J /&/ Y" 0( 6 P S ? @5A1C 9>7 C
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IPB080N06N
IPP080N06N
5411C
da5 diode
BC519
58a4
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PDF
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IPB085N06L
Abstract: da5 diode marking 4rt IPB085N06L G
Text: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J 0&* Y" 0( 6 P S ? @5A1C
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IPB085N06L
IPP085N06L
da5 diode
marking 4rt
IPB085N06L G
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BFQ 325
Abstract: bfq 85 marking GMA BFQ 58
Text: BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-23
Q62702-F1049
Dec-12-1996
BFQ 325
bfq 85
marking GMA
BFQ 58
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PDF
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temic 0675
Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
Text: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23
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D-74025
temic 0675
MARKING ra
BFQ 540 application
Telefunken 2360
telefunken ra 100
BFQ 244
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PDF
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Untitled
Abstract: No abstract text available
Text: Green Product STU/D17L01 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS R DS ON (m Ω) Max ID FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 81 @ VGS=10V
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STU/D17L01
-100V
252AA(
O-252
O-252
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PDF
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transistor c 933
Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Text: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
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PHl819-33
Tl50M50A
AlC100A
transistor c 933
transistor j5
Transistor 933
13MM
transistor c 144
572 transistor
933 TRANSISTOR
30 w RF POWER TRANSISTOR NPN
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Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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PDF
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transistor 9163
Abstract: lN914B lN914 PH1617-2 BIPOLAR M 846 m 32 ab transistor transistor 1555
Text: Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 2W PH1617-2 v2.00 Features l l l l l l Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching
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PH1617-2
-55to
transistor 9163
lN914B
lN914
PH1617-2
BIPOLAR M 846
m 32 ab transistor
transistor 1555
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PDF
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FL 1173
Abstract: Transistor A 1776 PH1516-10
Text: =_ F’E an AMP company Wireless Bipolar Power Transistor, 1.45 - 1.60 GHz 1OW PHl516-10 v2.00 Features l l l l l l IzS Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point
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PHl516-10
t13Mn,
FL 1173
Transistor A 1776
PH1516-10
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs
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OCR Scan
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Q62702-F1611
OT-143
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-F1049
OT-23
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611
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OCR Scan
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Q62702-F1611
OT-143
0535bOS
900MHz
fl235b05
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PDF
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Untitled
Abstract: No abstract text available
Text: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.
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OCR Scan
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823b32Q
62702-F1049
OT-23
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PDF
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75-06A7T
Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
Text: IGBT Modules - Sixpack configuration NPT IGBT Modules N P T IG B T = non-punch through insulated gate bipolar transistor; square R BSO A, short circuit rated 6-pack IG BT - Modules Fig. 81 ► New Type •W K/W Us A u T ,= 25°C IGBT mJ Tj = 125°C IGBT IGBT
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OCR Scan
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30-06A7
30-06A7T
50-06A7
50-06A7T
75-06A7
75-06A7T
15-12A7
25-12A7
50-12E7
100-06A8
Bt 35 transistor
transistor 81 110 w 85
100-12E8
MWI 15-12A7
25-12A7T
transistor T 044
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st ae gp 446
Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Text: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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OT-23
st ae gp 446
AE GP 532
AE GP 531
ae gp 447
592/diode gp 421
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PDF
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0733
Abstract: No abstract text available
Text: BFP 81 NPN Silicon RF Transistor • For low -noise am plifiers up to 2 G H z at collector currents from 0.5 to 25 mA. E C E C C -ty p e in preparation: C E C C 50002/. E E S D : E lectro static d isch arg e sensitive device, observe handling precautions!
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OCR Scan
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T-143
0733
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PDF
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TRANSISTOR 3FT 81
Abstract: T20 64 diode transistor 81 110 w 63 transistor 9163
Text: an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz PH1617-2 Features • • • • • • Designed for Linear Amplifier Applications Class AB: -33 dBc 'I’yp 3rd 1MD at 2 Watts PKP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration
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OCR Scan
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PH1617-2
TRANSISTOR 3FT 81
T20 64 diode
transistor 81 110 w 63
transistor 9163
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PDF
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LC1 F150
Abstract: d 1711
Text: m a n A M P com pany Wireless Bipolar Power Transistor, 10W 1.45-1.60 GHz PH1516-10 Features • • • • • • Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point
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OCR Scan
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PH1516-10
LC1 F150
d 1711
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PDF
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1445s
Abstract: transistor D 1761 PH1617
Text: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point
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OCR Scan
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PH1617-10
1445s
transistor D 1761
PH1617
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PDF
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