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    TRANSISTOR 9012 G Search Results

    TRANSISTOR 9012 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9012 G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor c 9012

    Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp PDF

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    transistor c 9012

    Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN PDF

    transistor c 9012

    Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012 PDF

    transistor c 9012

    Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor PDF

    9012 Unisonic

    Abstract: 9012L-
    Text: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity


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    625mW) -500mA) 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K QW-R201-0at QW-R201-029 9012 Unisonic 9012L- PDF

    9013 npn

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012


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    625mW) 500mA) 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K 9013-x-T92-R 9013L-x-T92-R 9013 npn NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN PDF

    9013 transistor

    Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    625mW) 500mA) 500mA 500mA, QW-R201-030 9013 transistor Transistor-9013 h UTC 9013 9013 NPN Transistor PDF

    PNP 9012

    Abstract: IC 9012 9012 pnp 9012 pnp transistor 9012 PDF IC 9012 transistors equivalent 9012
    Text: BC558LT1 9012 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to BC548LT1 * Collector Current :Ic= -500mA * High Total Power Dissipation :Pc=225mW 1. 2.4 1.3 ABSOLUTE MAXIMUM RATINGS at Ta=25


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    BC558LT1 BC548LT1 -500mA 225mW -50mA -500mA PNP 9012 IC 9012 9012 pnp 9012 pnp transistor 9012 PDF IC 9012 transistors equivalent 9012 PDF

    9012 Unisonic

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    625mW) -500mA) -50mA -500mA -500mA -10mA QW-R201-029 9012 Unisonic PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    625mW) -500mA) QW-R201-029 PDF

    TRANSISTOR SMD A4 L pnp

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    OT-23 100uA, C-120 TRANSISTOR SMD A4 L pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3


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    OT-23 100uA, C-120 PDF

    PNP 9012 SMD

    Abstract: transistor cs 9012 9012 SMD 9012 SOT-23 data sheet transistor 9012 transistor smd marking BA RE transistor CS 9012 PNP Transistor 9012 G transistor smd marking AS sot-23 Transistor 9012 G 22 C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage


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    ISO/TS16949 OT-23 100uA, C-120 PNP 9012 SMD transistor cs 9012 9012 SMD 9012 SOT-23 data sheet transistor 9012 transistor smd marking BA RE transistor CS 9012 PNP Transistor 9012 G transistor smd marking AS sot-23 Transistor 9012 G 22 C PDF

    UTC 9013

    Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    625mW) 500mA) QW-R201-030 UTC 9013 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic PDF

    PNP 9012 SMD

    Abstract: 9012 pnp transistor smd
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    OT-23 100uA, C-120 PNP 9012 SMD 9012 pnp transistor smd PDF

    transistor BR 9012

    Abstract: IC 9012 BR 9012 PNP 9012 9012 9012 pnp PDF IC 9012 9012 pnp transistor 50/transistor BR 9012
    Text: 9012 PNP SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.625 Collector current ICM : -0.5 Collector-base voltage V BR CBO : -40 1.EMITTER W Tamb=25 2.BASE 1 2 3 3.COLLECTOR A V Tamb=25 ELECTRICAL CHARACTERISTICS Parameter unless otherwise specified


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    -500mA -100mA 30MHz transistor BR 9012 IC 9012 BR 9012 PNP 9012 9012 9012 pnp PDF IC 9012 9012 pnp transistor 50/transistor BR 9012 PDF

    PNP 9012 SMD

    Abstract: 9012 SOT-23 9012 pnp transistor smd TRANSISTOR SMD 9012 9012 SMD 9012 SMD PNP 9012 transistor sot-23 9012 SOT23 smd transistor 9012 CMBT9012
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    OT-23 100uA, C-120 PNP 9012 SMD 9012 SOT-23 9012 pnp transistor smd TRANSISTOR SMD 9012 9012 SMD 9012 SMD PNP 9012 transistor sot-23 9012 SOT23 smd transistor 9012 CMBT9012 PDF

    Transistor 9012 ax

    Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012
    Text: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge


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    S9013 500mA 625mW 100MHz 100mA Transistor 9012 ax transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012 PDF

    9013 SOT-23

    Abstract: 9013 transistor sot-23 NPN 9013 MMBT9013LT1 MMBT9013 9013 NPN Output Transistor 9522 transistor mmbt9013l.t1 ic 8022 transistor 9012 9013
    Text: MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9012 Collector Current :Ic=500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW


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    MMBT9013LT1 OT-23 500mA 225mW 9013 SOT-23 9013 transistor sot-23 NPN 9013 MMBT9013LT1 MMBT9013 9013 NPN Output Transistor 9522 transistor mmbt9013l.t1 ic 8022 transistor 9012 9013 PDF

    PNP 9012

    Abstract: transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn
    Text: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


    OCR Scan
    103mA PNP 9012 transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn PDF

    CP1005

    Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
    Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I


    OCR Scan
    KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014 PDF

    9011 9012 9013 9014 9018

    Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
    Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER


    OCR Scan
    CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015 PDF

    transistor cs 9012

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.


    OCR Scan
    SS9013 625mW transistor cs 9012 PDF