2SB775
Abstract: 2SB77 2SD895 1116MW
Text: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3
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ENN679F
2SB775
2SD895
2SB775/2SD895
2SB775/2SD895]
2SB775
2SB77
2SD895
1116MW
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2SC4615
Abstract: 2044B 2SA1772
Text: Ordering number:ENN3398A 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown votlage (VCEO≥400V).
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ENN3398A
2SA1772
2SC4615
2SA1772/2SC4615
VCEO400V)
2045B
2SA1772/2SC4615]
2044B
2SC4615
2044B
2SA1772
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Untitled
Abstract: No abstract text available
Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors
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PH2323-6
513MM)
5b422D5
00013D3
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TRANSISTOR zo 109 ma
Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
Text: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry
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PH2856-22
TT50M50A
ATC100A
TRANSISTOR zo 109 ma
transistor zo 109
transistor TI 310
Rogers 6010.5
PH2856
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transistor c 3206
Abstract: transistor j7
Text: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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PH0404-7EL
Sb4220S
5b42205
0DQ1175
transistor c 3206
transistor j7
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T4 0450
Abstract: transistor j8
Text: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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OCR Scan
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PH0404-30EL
Sb42E05
Sb422DS
D001177
T4 0450
transistor j8
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MAPRST2729-170M
Abstract: 15 w RF POWER TRANSISTOR NPN VCC36
Text: MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor
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MAPRST2729-170M
MAPRST2729-170M
15 w RF POWER TRANSISTOR NPN
VCC36
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transistor yb
Abstract: M220S transistor t 04 27
Text: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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OCR Scan
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PH0404-1OOEL
M220S
PH0404-lOOEL
5b422DS
transistor yb
transistor t 04 27
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omni spectra sma
Abstract: transistor n03 PH2856
Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry
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OCR Scan
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PH2856-3
Sb42205
0D013S3
TT50M50A
ATC100A
Sb4E20S
Q0D1324
omni spectra sma
transistor n03
PH2856
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VCC36
Abstract: No abstract text available
Text: Afa Avionics Pulsed Power Transistor PH0912-40 40 Watts, 960-1215 MHz, 7 Features Preliminary Pulse, 50% Duty Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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OCR Scan
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PH0912-40
5b42SD5
VCC36
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2SD896
Abstract: 2SB776
Text: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package
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ENN678F
2SB776
2SD896
2SB776/2SD896
00V/7A,
2SB776/2SD896]
2SB776
2SD896.
2SD896
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transistor 355
Abstract: SHM-2E CC 1215
Text: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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OCR Scan
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PH0912-2
ShM2E05
transistor 355
SHM-2E
CC 1215
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Untitled
Abstract: No abstract text available
Text: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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OCR Scan
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PH0912-20
5b4220S
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F300
Abstract: No abstract text available
Text: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System
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OCR Scan
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PH0303-8
5b422D5
0DD1172
F300
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VCO 1.4 GHz
Abstract: No abstract text available
Text: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry
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OCR Scan
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PH3135-80M
SbM250S
VCO 1.4 GHz
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MAPHST0034
Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
Text: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry
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MAPHST0034
29Wpk,
MAPHST0034
MAPHST
MAPHS
VCC36
9-GHz
c 129 transistor
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a 103 m Transistor
Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
Text: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration
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PH1090-75L
DS181
a 103 m Transistor
A 103 TRANSISTOR
transistor PD j6
1030 mhz
transistor j6
PH1090-75L
f103
TRANSISTOR 75
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1030-1
Abstract: PH1090-15L
Text: PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration
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PH1090-15L
DS180
1030-1
PH1090-15L
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VCC36
Abstract: No abstract text available
Text: Ajfa Radar Pulsed Power Transistor PH2729-120M Preliminary 120 Watts, 2.70-2.90 GHz, 100 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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OCR Scan
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PH2729-120M
SL4220S
VCC36
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PDF
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100 N 37
Abstract: No abstract text available
Text: CW Power Transistor PH0303-37 37 Watts, 300-325 MHz Features Outline Drawing • NPN Silicon Power Transistor • Common Emitter Configuration • Class AB Linear Operation • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input Impedance Matching
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OCR Scan
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PH0303-37
SL422DS
100 N 37
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Untitled
Abstract: No abstract text available
Text: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration
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OCR Scan
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PH0912-150
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transistor f20
Abstract: No abstract text available
Text: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors
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OCR Scan
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PH2022-1OSC
transistor f20
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PDF
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Untitled
Abstract: No abstract text available
Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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OCR Scan
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1090-80L
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PDF
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PH1417-200S
Abstract: F 140 F140 C5 155 10 PH1417
Text: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor
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OCR Scan
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PH1417-200S
Sb4220S
DDD12L
PH1417-200S
F 140
F140
C5 155 10
PH1417
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