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    TRANSISTOR 9050 Search Results

    TRANSISTOR 9050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9050 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB775

    Abstract: 2SB77 2SD895 1116MW
    Text: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3


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    ENN679F 2SB775 2SD895 2SB775/2SD895 2SB775/2SD895] 2SB775 2SB77 2SD895 1116MW PDF

    2SC4615

    Abstract: 2044B 2SA1772
    Text: Ordering number:ENN3398A 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown votlage (VCEO≥400V).


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    ENN3398A 2SA1772 2SC4615 2SA1772/2SC4615 VCEO400V) 2045B 2SA1772/2SC4615] 2044B 2SC4615 2044B 2SA1772 PDF

    Untitled

    Abstract: No abstract text available
    Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors


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    PH2323-6 513MM) 5b422D5 00013D3 PDF

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
    Text: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry


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    PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856 PDF

    transistor c 3206

    Abstract: transistor j7
    Text: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


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    PH0404-7EL Sb4220S 5b42205 0DQ1175 transistor c 3206 transistor j7 PDF

    T4 0450

    Abstract: transistor j8
    Text: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


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    PH0404-30EL Sb42E05 Sb422DS D001177 T4 0450 transistor j8 PDF

    MAPRST2729-170M

    Abstract: 15 w RF POWER TRANSISTOR NPN VCC36
    Text: MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor


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    MAPRST2729-170M MAPRST2729-170M 15 w RF POWER TRANSISTOR NPN VCC36 PDF

    transistor yb

    Abstract: M220S transistor t 04 27
    Text: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


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    PH0404-1OOEL M220S PH0404-lOOEL 5b422DS transistor yb transistor t 04 27 PDF

    omni spectra sma

    Abstract: transistor n03 PH2856
    Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry


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    PH2856-3 Sb42205 0D013S3 TT50M50A ATC100A Sb4E20S Q0D1324 omni spectra sma transistor n03 PH2856 PDF

    VCC36

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH0912-40 40 Watts, 960-1215 MHz, 7 Features Preliminary Pulse, 50% Duty Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


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    PH0912-40 5b42SD5 VCC36 PDF

    2SD896

    Abstract: 2SB776
    Text: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package


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    ENN678F 2SB776 2SD896 2SB776/2SD896 00V/7A, 2SB776/2SD896] 2SB776 2SD896. 2SD896 PDF

    transistor 355

    Abstract: SHM-2E CC 1215
    Text: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


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    PH0912-2 ShM2E05 transistor 355 SHM-2E CC 1215 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


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    PH0912-20 5b4220S PDF

    F300

    Abstract: No abstract text available
    Text: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System


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    PH0303-8 5b422D5 0DD1172 F300 PDF

    VCO 1.4 GHz

    Abstract: No abstract text available
    Text: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


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    PH3135-80M SbM250S VCO 1.4 GHz PDF

    MAPHST0034

    Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
    Text: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry


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    MAPHST0034 29Wpk, MAPHST0034 MAPHST MAPHS VCC36 9-GHz c 129 transistor PDF

    a 103 m Transistor

    Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
    Text: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration


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    PH1090-75L DS181 a 103 m Transistor A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75 PDF

    1030-1

    Abstract: PH1090-15L
    Text: PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration


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    PH1090-15L DS180 1030-1 PH1090-15L PDF

    VCC36

    Abstract: No abstract text available
    Text: Ajfa Radar Pulsed Power Transistor PH2729-120M Preliminary 120 Watts, 2.70-2.90 GHz, 100 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


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    PH2729-120M SL4220S VCC36 PDF

    100 N 37

    Abstract: No abstract text available
    Text: CW Power Transistor PH0303-37 37 Watts, 300-325 MHz Features Outline Drawing • NPN Silicon Power Transistor • Common Emitter Configuration • Class AB Linear Operation • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input Impedance Matching


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    PH0303-37 SL422DS 100 N 37 PDF

    Untitled

    Abstract: No abstract text available
    Text: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration


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    PH0912-150 PDF

    transistor f20

    Abstract: No abstract text available
    Text: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PH2022-1OSC transistor f20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


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    1090-80L PDF

    PH1417-200S

    Abstract: F 140 F140 C5 155 10 PH1417
    Text: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor


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    PH1417-200S Sb4220S DDD12L PH1417-200S F 140 F140 C5 155 10 PH1417 PDF