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    TRANSISTOR 908 P Search Results

    TRANSISTOR 908 P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 908 P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PIR6WB-1PS

    Abstract: electromagnetic relay RSR30
    Text: PIR6WB-1PS Subminiature Electromagnetic and Solid State Modules • • • • • Spring Clamp Terminals Electronic spring terminals socket PI6W-1PS Electromagnetic relay (RM699BV) or solid state relay (RSR30) Width 6.2 mm Equipped with green LED E105728 E228916


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    RM699BV) RSR30) E105728 E228916 PIR6WB-1PS electromagnetic relay RSR30 PDF

    Accessories

    Abstract: pulsotronic 9914-0800 ultrasonic motion detector pulsotronic 8100-2500 pulsotronic ultrasonic proximity detector ultrasonic motion detector sensor 9914-0800 pulsotronic 9914-1000 5V 3A SPDT RELAY
    Text: NEXT FIND IT Table of Contents CLICK FOR PDF FILE CLICK FOR PDF FILE CLICK FOR PDF FILE OVERVIEW – Inductive Proximity Sensors CYLINDRICAL Inductive Proximity Sensors LIMIT STYLE Inductive Proximity Sensors Introduction .4


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    PDF

    Modules A

    Abstract: No abstract text available
    Text: Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 410-112013-5M Printed November 2013 Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial


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    410-112013-5M UL508 0-960W Modules A PDF

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    RM40 and RM50

    Abstract: RM699B RSR30 PIR6WB-1PS RS35 and RS50 PIR2M Modules A RM40 RM50 RM84 RM85 RM87 RS35 RS50
    Text: Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 410-112013-5M Printed November 2013 Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial


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    410-112013-5M UL508 0-960W RM40 and RM50 RM699B RSR30 PIR6WB-1PS RS35 and RS50 PIR2M Modules A RM40 RM50 RM84 RM85 RM87 RS35 RS50 PDF

    BDX 241

    Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 BDX 241 transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: ALTECH DIN-Rail Power Supplies ENERGY SAVER Choose your product from a wide range of features and options, suitable for almost all applications. Slimline 6-19 • Small in size - narrow footprint • Powerful with generous power reserves • Simple usage • 10W to 100W


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    CA703 CA802 CA803 CA903 CGT10U PDF

    Untitled

    Abstract: No abstract text available
    Text: PSP-240 Series Features: • Universal AC input / full range • Built in active PFC function • Protections: Short Circuit / Overload / Over voltage / Over temperature Cooling by free air convection • DIN rail mountable • UL 508 industrial control equipment approved


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    PSP-240 100KHz PSP-24024 PSP-24048 80mVp-p 150mVp-p 20MHz 230VAC 110VAC PDF

    LDJ2H825M03FA062

    Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
    Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System


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    AWB7225 AWB7225 LDJ2H825M03FA062 DATE CODE MURATA Hybrid Couplers PDF

    Untitled

    Abstract: No abstract text available
    Text: PST-960 Series Features: • Three-Phase AC 340 ~ 550V wide range input • High efficiency 91% and low dissipation • Protections: Short Circuit / Overload / Over Voltage / Over Temperature • Optional parallel function 1+1 • Cooling by free air convection


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    PST-960 EN61000-6-2 EN50082-2) PST-96024 PST-96048 80mVp-p 20MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: PS-S100 Series Specifications SAVER ENERGY ENERGY SAVER OUTPUT OUTPUT Features: • Universal AC input / full range • Protections: Short Circuit / Overload / Overvoltage / Over temperature • ZCS/ZVS technology to reduce power dissipation • Cooling by free air convection


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    PS-S100 PS-S10012 PS-S10024 PS-S10048 120mVp-p 150mVp-p 200mVp-p 20MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: PS-100 Series Features: Specifications • Universal AC input / full range • Protections: Short Circuit / Overload / Over Voltage / Overtemperature • Cooling by free air convection • DIN rail mountable • Isolation class II • LED indicator for power on


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    PS-100 PS-10012 PS-10015 PS-10024 120mVp-p 150mVp-p 20MHz PDF

    PS-100

    Abstract: No abstract text available
    Text: PS-100 Series Features: • Universal AC input / full range • Protections: Short Circuit / Overload / Over Voltage / Overtemperature • Cooling by free air convection • DIN rail mountable • Isolation class II • LED indicator for power on • No load power consumption <1W


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    PS-100 PS-10012 PS-10015 PS-10024 120mVp-p 150mVp-p 20MHz PDF

    STR 6307

    Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
    Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.


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    500V-1000A J22587 STR 6307 str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module PDF

    E223770

    Abstract: hy 1418 kf90c54 FT-X1 inductive proximity detector ic din mount 96 pin cable connector electromagnetic welding machine wiring diagram PLC material inductive sensor IPS 6000
    Text: Table of Contents Introduction and Technical Information .3-7 DC-3


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    Wire-Standard5UN024-Q65 AIS30N15UP024-2M AIS30N15UP024-Q65 K1F90VA K2F90V5 K2F90V5R KF90C53N KF90C53NR KF90C53P KF90C53PR E223770 hy 1418 kf90c54 FT-X1 inductive proximity detector ic din mount 96 pin cable connector electromagnetic welding machine wiring diagram PLC material inductive sensor IPS 6000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic CCD Area Image Sensor MN3713FE 4.5mm 1/4 inch EIS CCD Area Image Sensor •Overview ■Pin Assignments The M N3713FE is a 4.5mm (1/4 inch) Interline Transfer CCD (IT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion


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    MN3713FE N3713FE horizontalX616 bR32fi52 PDF

    str 6307

    Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


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    ST1200FXF21 500-V, 000-A 300-V, 200-A str 6307 str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module PDF

    AWB7123

    Abstract: AWB7123HM41P8
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


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    AWB7123 AWB7123 AWB7123HM41P8 PDF

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage BIMOSFETTM IXBH 40N140 VCES IXBH 40N160 Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode = = = = IC25 VCE sat tfi 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C


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    40N140 40N160 O-247 40N140 IXBH40 D-68623 PDF

    AWB7127

    Abstract: AWB7127HM41P8
    Text: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


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    AWB7127 AWB7127 AWB7127HM41P8 PDF

    JS-001-2010

    Abstract: No abstract text available
    Text: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System


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    AWB7227 AWB7227 JS-001-2010 PDF

    MG400H1FK1

    Abstract: LF400A
    Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage


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    MG400H1FK1 TjSl85' MG400H1FK1 LF400A PDF