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    TRANSISTOR 931 Search Results

    TRANSISTOR 931 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 931 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ca3083

    Abstract: CA3096 MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays
    Text: CA3096 and CA3083 Transistor Array SPICE Models July 1997 MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.


    Original     		CA3096 CA3083 MM9710 CA3096, MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays PDF

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


    Original     		2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2 PDF

    CA3046 bjt

    Abstract: CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E CA3127 npn tr array CA3086 APPLICATION NOTE
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


    Original     		CA3046, CA3086, CA3127 MM9701 CA3046 bjt CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E npn tr array CA3086 APPLICATION NOTE PDF

    BJT IC Vce

    Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with


    Original     		HFA3134 MM3134 HFA3134, BJT IC Vce NPN Transistor Pair npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E PDF

    2SC5005

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		2SC5005 2SC5005 PDF

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399 PDF

    nec 2401 831

    Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and


    Original     		2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor PDF

    Q545

    Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz Q545 SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords


    Original     		HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128 PDF

    900mhz-1800mhz rf frequency amplifier circuit

    Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 SOI series shunt PDF

    BJT IC Vce

    Abstract: npn spice model This application note describes the SPICE transistor model HFA3134
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 [ /Title MM3 134 /Subject (HFA3 134 8.5GH z NPN Matche d Transistor Pair SPICE Model) /Autho r () /Keywords (Intersil Corporation, semiconductor, ) /Creator () /DOCI NFO MM3134 Introduction


    Original     		HFA3134 MM3134 HFA3134, BJT IC Vce npn spice model This application note describes the SPICE transistor model PDF

    NEC 2581

    Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


    Original     		2SC4954 2SC4954-T1 NEC 2581 nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821 PDF

    NEC 2581

    Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


    Original     		2SC4954 2SC4954-T2 2SC4954-T1 NEC 2581 nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1 PDF

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


    OCR Scan     		2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor PDF

    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		2SC5009 2SC5009 ZO 107 MA 341S PDF

    transistor 1211

    Abstract: transistor su 312 transistor zo 109
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		2SC5005 2SC5005 Collect69 transistor 1211 transistor su 312 transistor zo 109 PDF

    TRANSISTOR 2SC 2581

    Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS


    OCR Scan     		2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733 PDF

    SN 4931

    Abstract: 2sc 3476 2SC 1885 SN 4931 N
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan     		2SC5005 2SC5005 SN 4931 2sc 3476 2SC 1885 SN 4931 N PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


    OCR Scan     		BUK583-60A OT223 BUK583-60A PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET_, GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mount


    OCR Scan     		BUK583-60A OT223 BUK583-60A PDF

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    OCR Scan     		2SC5006 2SC5006 PDF

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor PDF

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


    OCR Scan     		2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568 PDF