Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 9718 Search Results

    TRANSISTOR 9718 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9718 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGB4061D

    Abstract: IRF1010 Transistor marking code S IRGB4061DPBF
    Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA


    Original
    PDF 97189B IRGB4061DPbF IRF1010 O-220AB IRGB4061D IRF1010 Transistor marking code S IRGB4061DPBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA


    Original
    PDF 97189B IRGB4061DPbF IRF1010 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97189 IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original
    PDF IRGB4061DPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97189A IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original
    PDF 7189A IRGB4061DPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97188 IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original
    PDF IRGB4056DPbF O-220AB

    IGBT 600V 12A

    Abstract: IRGB4056DPBF igbt 12A600
    Text: PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original
    PDF 7188A IRGB4056DPbF O-220AB IGBT 600V 12A IRGB4056DPBF igbt 12A600

    Untitled

    Abstract: No abstract text available
    Text: PD - 97189A IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original
    PDF 7189A IRGB4061DPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original
    PDF 7188A IRGB4056DPbF O-220AB

    IRGB4056D

    Abstract: IGBT 600V 12A
    Text: PD - 97188 IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original
    PDF IRGB4056DPbF O-220AB IRGB4056D IGBT 600V 12A

    272048

    Abstract: MAX EPLD TRANSISTOR JC 84-1MISR4 CY7C342B EME-6300H P26 TRANSISTOR failure test report EPLD
    Text: Cypress Semiconductor Qualification Report QTP# 97185 VERSION 1.0 November, 1997 CY7C342B 128-Macrocell MAX EPLD Cypress Semiconductor 128 Macrocell MAX EPLD - P26 Technology Device: CY7C342B Package: PLCC QTP# 97185, V. 1.0 Page 2 of 8 November, 1997


    Original
    PDF CY7C342B 128-Macrocell 7C342B 7C342B CY7C342B-JC 272048 MAX EPLD TRANSISTOR JC 84-1MISR4 CY7C342B EME-6300H P26 TRANSISTOR failure test report EPLD

    HF power amplifier blf177

    Abstract: blf177 108 amplifier NC08703 BLF177 philips ferroxcube 4c6 philips toroid 4c6 MGM404 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core philips toroidal transformer
    Text: APPLICATION NOTE A wideband linear power amplifier 1.6 − 28 MHz for 300 W PEP with 2 MOS transistors BLF177 NCO8703 Philips Semiconductors A wideband linear power amplifier (1.6 − 28 MHz) for 300 W PEP with 2 MOS transistors BLF177 CONTENTS 1 SUMMARY


    Original
    PDF BLF177 NCO8703 SCA57 HF power amplifier blf177 blf177 108 amplifier NC08703 BLF177 philips ferroxcube 4c6 philips toroid 4c6 MGM404 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core philips toroidal transformer

    SMD transistor MARKING CODE 43

    Abstract: smd code marking LP K 286 Philips TO-92 MARKING CODE W PDTC123ET PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original
    PDF PDTC123E 01-May-99) SMD transistor MARKING CODE 43 smd code marking LP K 286 Philips TO-92 MARKING CODE W PDTC123ET PDTA123ET

    4C6 ferrite

    Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14


    Original
    PDF SD1731-14 ST448) ST448 SD1731 4C6 ferrite ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731-14 ssb transformer

    ferrite core transformer pin connection

    Abstract: power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731 SD1731-14 ST448
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE


    Original
    PDF SD1731-14 ST448) ST448 SD1731 ferrite core transformer pin connection power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731-14 ST448

    TH562

    Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION


    Original
    PDF SD1731 TH562) TH562 SD1731 TH562 TORIOD th562 c ferrite core transformer pin connection IE transformer core 47UF63V

    transistor k 4213

    Abstract: STMicroelectronics marking code date th562 SD1731 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet
    Text: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar


    Original
    PDF SD1731 TH562) SD1731 transistor k 4213 STMicroelectronics marking code date th562 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan
    PDF

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan
    PDF

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan
    PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    27c49

    Abstract: transistor 9718
    Text: NMC27C53 National KA Semiconductor NMC27C53 Very High Speed Version 262,144-Bit 32k x 8 UV Erasable CMOS PROM Pin Compatible with 256k Bipolar PROMs General Description Features The NMC27C53 Is a very high-speed 256k, UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


    OCR Scan
    PDF NMC27C53 144-Bit 28-pin 27c49 transistor 9718

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


    OCR Scan
    PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed


    OCR Scan
    PDF SD1731-14 ST448) SD1731 ST448 0D77b3b

    Untitled

    Abstract: No abstract text available
    Text: Œ fï . SG S-IHO M SON l[Li ïï[ÊMO©S SD1731 TH562 RF & M ICRO W AVE TR AN SISTO R S HF SSB APPLIC ATIO N S . OPTIMIZED FOR SSB • 30 MHz ■ 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER ■ GOLD METALLIZATION > P o u t = 220 W PEP WITH 13 dB GAIN PIN CONNECTION


    OCR Scan
    PDF SD1731 TH562) SD1731

    4C6 ferrite

    Abstract: No abstract text available
    Text: SGS-THOMSON m SD1731-14 ST448 RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION Pout = 250 W PEP WITH 12 dB GAIN .50 0 4 L F L ( M 1 7 4 ) epoxy sealed O R D ER CODE


    OCR Scan
    PDF SD1731-14 ST448) ST448 SD1731 4C6 ferrite