IRGB4061D
Abstract: IRF1010 Transistor marking code S IRGB4061DPBF
Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
|
Original
|
PDF
|
97189B
IRGB4061DPbF
IRF1010
O-220AB
IRGB4061D
IRF1010
Transistor marking code S
IRGB4061DPBF
|
Untitled
Abstract: No abstract text available
Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
|
Original
|
PDF
|
97189B
IRGB4061DPbF
IRF1010
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 97189 IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
PDF
|
IRGB4061DPbF
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 97189A IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
PDF
|
7189A
IRGB4061DPbF
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 97188 IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
PDF
|
IRGB4056DPbF
O-220AB
|
IGBT 600V 12A
Abstract: IRGB4056DPBF igbt 12A600
Text: PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
PDF
|
7188A
IRGB4056DPbF
O-220AB
IGBT 600V 12A
IRGB4056DPBF igbt
12A600
|
Untitled
Abstract: No abstract text available
Text: PD - 97189A IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
PDF
|
7189A
IRGB4061DPbF
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
PDF
|
7188A
IRGB4056DPbF
O-220AB
|
IRGB4056D
Abstract: IGBT 600V 12A
Text: PD - 97188 IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
PDF
|
IRGB4056DPbF
O-220AB
IRGB4056D
IGBT 600V 12A
|
272048
Abstract: MAX EPLD TRANSISTOR JC 84-1MISR4 CY7C342B EME-6300H P26 TRANSISTOR failure test report EPLD
Text: Cypress Semiconductor Qualification Report QTP# 97185 VERSION 1.0 November, 1997 CY7C342B 128-Macrocell MAX EPLD Cypress Semiconductor 128 Macrocell MAX EPLD - P26 Technology Device: CY7C342B Package: PLCC QTP# 97185, V. 1.0 Page 2 of 8 November, 1997
|
Original
|
PDF
|
CY7C342B
128-Macrocell
7C342B
7C342B
CY7C342B-JC
272048
MAX EPLD
TRANSISTOR JC
84-1MISR4
CY7C342B
EME-6300H
P26 TRANSISTOR
failure test report
EPLD
|
HF power amplifier blf177
Abstract: blf177 108 amplifier NC08703 BLF177 philips ferroxcube 4c6 philips toroid 4c6 MGM404 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core philips toroidal transformer
Text: APPLICATION NOTE A wideband linear power amplifier 1.6 − 28 MHz for 300 W PEP with 2 MOS transistors BLF177 NCO8703 Philips Semiconductors A wideband linear power amplifier (1.6 − 28 MHz) for 300 W PEP with 2 MOS transistors BLF177 CONTENTS 1 SUMMARY
|
Original
|
PDF
|
BLF177
NCO8703
SCA57
HF power amplifier blf177
blf177 108 amplifier
NC08703
BLF177
philips ferroxcube 4c6
philips toroid 4c6
MGM404
Philips Components, Soft Ferrites Data Handbook M
ferroxcube 4C6 toroid core
philips toroidal transformer
|
SMD transistor MARKING CODE 43
Abstract: smd code marking LP K 286 Philips TO-92 MARKING CODE W PDTC123ET PDTA123ET
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;
|
Original
|
PDF
|
PDTC123E
01-May-99)
SMD transistor MARKING CODE 43
smd code marking LP
K 286
Philips TO-92 MARKING CODE W
PDTC123ET
PDTA123ET
|
4C6 ferrite
Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer
Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14
|
Original
|
PDF
|
SD1731-14
ST448)
ST448
SD1731
4C6 ferrite
ferrite core 4c6
ferrite core transformer pin connection
ST448
4C6 SPECIFICATIONS
SD1731 datasheet
TORIOD
SD1731-14
ssb transformer
|
ferrite core transformer pin connection
Abstract: power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731 SD1731-14 ST448
Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE
|
Original
|
PDF
|
SD1731-14
ST448)
ST448
SD1731
ferrite core transformer pin connection
power transformer from malaysia
4C6 ferrite
FERRITE TRANSFORMER
HF SSB APPLICATIONS
planar impedance transformer
planar transformer
SD1731-14
ST448
|
|
TH562
Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V
Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION
|
Original
|
PDF
|
SD1731
TH562)
TH562
SD1731
TH562
TORIOD
th562 c
ferrite core transformer pin connection
IE transformer core
47UF63V
|
transistor k 4213
Abstract: STMicroelectronics marking code date th562 SD1731 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet
Text: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar
|
Original
|
PDF
|
SD1731
TH562)
SD1731
transistor k 4213
STMicroelectronics marking code date
th562
Date Code Marking STMicroelectronics
FERRITE TRANSFORMER
HF SSB APPLICATIONS
k 4213
planar impedance transformer
SD1731 datasheet
|
JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
|
OCR Scan
|
PDF
|
|
trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
|
OCR Scan
|
PDF
|
|
MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
|
OCR Scan
|
PDF
|
28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
|
27c49
Abstract: transistor 9718
Text: NMC27C53 National KA Semiconductor NMC27C53 Very High Speed Version 262,144-Bit 32k x 8 UV Erasable CMOS PROM Pin Compatible with 256k Bipolar PROMs General Description Features The NMC27C53 Is a very high-speed 256k, UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
|
OCR Scan
|
PDF
|
NMC27C53
144-Bit
28-pin
27c49
transistor 9718
|
LM1808
Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.
|
OCR Scan
|
PDF
|
LM741
MIL-M-38510,
M-38510/
10101BCC.
MIL-M-38510
L-M-38510
LM1808
LM1800
TRANSISTOR LM371
ks2 6k
MC7812CP
LM3026
SN52101AJ
transistor bf 175
LM170
Germanium drift transistor
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed
|
OCR Scan
|
PDF
|
SD1731-14
ST448)
SD1731
ST448
0D77b3b
|
Untitled
Abstract: No abstract text available
Text: Œ fï . SG S-IHO M SON l[Li ïï[ÊMO©S SD1731 TH562 RF & M ICRO W AVE TR AN SISTO R S HF SSB APPLIC ATIO N S . OPTIMIZED FOR SSB • 30 MHz ■ 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER ■ GOLD METALLIZATION > P o u t = 220 W PEP WITH 13 dB GAIN PIN CONNECTION
|
OCR Scan
|
PDF
|
SD1731
TH562)
SD1731
|
4C6 ferrite
Abstract: No abstract text available
Text: SGS-THOMSON m SD1731-14 ST448 RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION Pout = 250 W PEP WITH 12 dB GAIN .50 0 4 L F L ( M 1 7 4 ) epoxy sealed O R D ER CODE
|
OCR Scan
|
PDF
|
SD1731-14
ST448)
ST448
SD1731
4C6 ferrite
|