MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
|
OCR Scan
|
MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
|
PDF
|
Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide
|
Original
|
A/20V
16P2Z
16pin
225mil
05MIN.
20pin
300mil
20P2N
20P2E
Mitsubishi M54564
M54534
M54571P
m54667p
M54585FP
m54571
M54566FP
16P2N
M54522P equivalent
m54532p
|
PDF
|
nec 2561
Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
|
Original
|
2SC5337
2SC5337
2SC3356
nec 2561
NEC 2561 transistor
2561 nec
2561 a nec
NEC semiconductor 2561
transistor NEC 2561
P1093
100MHZ
200MHZ
2SC3356
|
PDF
|
BUD43D2
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally
|
Original
|
BUD43D2
BUD43D2
BUD43D2:
r14525
BUD43D2/D
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
SMD310
|
PDF
|
MTP8P10
Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally
|
Original
|
BUD43D2
BUD43D2
BUD43D2:
r14525
BUD43D2/D
MTP8P10
MUR105
MJE210
MPF930
MTP12N10
|
PDF
|
npn transistor 400 volts.10 amperes
Abstract: No abstract text available
Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally
|
Original
|
BUD43D2
BUD43D2:
r14525
BUD43D2/D
npn transistor 400 volts.10 amperes
|
PDF
|
2SC5005
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
2SC5005
2SC5005
|
PDF
|
2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
|
Original
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the
|
OCR Scan
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T2
|
PDF
|
2sc4571
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
|
OCR Scan
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
|
PDF
|
transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
OCR Scan
|
2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
|
PDF
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
|
PDF
|
NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
|
PDF
|
|
|
MMT3823
Abstract: micro-T Package
Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is
|
OCR Scan
|
MMT3823
100-MHz
MMT3823
micro-T Package
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M E C L II M C 1000/1200 series D U A L 4 -5 IN P U T EXPANDERS MC1025 MCI 225 D ual expander arrays, with a 4-transistor array isolated from a 5transistor array. T he collectors and emitters from both arrays m ay be connected to form a 9-transistor array. W ith each base available, a 4,
|
OCR Scan
|
MC1025
20-input
40-input
1024/MC
C102S/M
C1225
|
PDF
|
2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
|
Original
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
|
PDF
|
NEC 2561
Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.
|
OCR Scan
|
2SC5337
2SC5337
2SC3356
NEC 2561
NEC 2561 transistor
2561 nec
transistor NEC 2561
NEC 2561 h
NEC D 809 F
2561 a nec
NEC semiconductor 2561
nec 2561 4 pin
transistor NEC D 586
|
PDF
|
free transistor and ic equivalent data
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2222A Preliminary DUAL TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT2222A is a Dual NPN small signal surface mount transistor. It’s suitable for low power amplification and switch.
|
Original
|
MMDT2222A
MMDT2222A
MMDT2222AL-AL6-R
MMDT2222AG-AL6-R
OT-363
QW-R218-016
free transistor and ic equivalent data
|
PDF
|
NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
|
OCR Scan
|
2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
|
PDF
|
SN 4931
Abstract: 2sc 3476 2SC 1885 SN 4931 N
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
|
OCR Scan
|
2SC5005
2SC5005
SN 4931
2sc 3476
2SC 1885
SN 4931 N
|
PDF
|
TLP338
Abstract: No abstract text available
Text: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
|
OCR Scan
|
TLP337
TLP338
150mA.
150mA
5000Vrms
E67349
TLP338
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2222A DUAL TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT2222A is a Dual NPN small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES
|
Original
|
MMDT2222A
MMDT2222A
MMDT2222AG-AL6-R
OT-363
QW-R218-016
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it
|
Original
|
UP2855
UP2855
OT-223
UP2855L-AA3-R
UP2855G-AA3-R
QW-R207-024
|
PDF
|
