NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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ir 035
Abstract: MCT2201
Text: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is
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MCT2201
MCT2201
1507C
10sec)
260mW
100x1
ir 035
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2n3439ua
Abstract: SFT343 SMD.22
Text: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor
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SFT3439S
2N3439UA
MIL-PRF-19500
TR0086A
2n3439ua
SFT343
SMD.22
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SFT1192
Abstract: No abstract text available
Text: SFT6800S.5 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 2 A /500 Volts NPN switching Transistor DESIGNER’S DATA SHEET Features: SMD.5 • Switching Transistor
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SFT6800S
SFT1192
MIL-PRF-19500
TR0088A
SFT1192
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NPN 1.5 AMPS POWER TRANSISTOR
Abstract: SFT1192
Text: SFT6800S.5 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 2 A /500 Volts NPN switching Transistor DESIGNER’S DATA SHEET Features: SMD.5 • Switching Transistor
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SFT6800S
SFT1192
300sec,
MIL-PRF-19500
TR0088B
NPN 1.5 AMPS POWER TRANSISTOR
SFT1192
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SFT343
Abstract: No abstract text available
Text: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor
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SFT3439S
2N3439UA
MIL-PRF-19500
TR0086A
SFT343
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bipolar transistor s-parameter
Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed
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AT-64023
AT-64023
5965-8916E
5989-2658EN
bipolar transistor s-parameter
bipolar transistor ghz s-parameter
200 mil BeO package
RF NPN POWER TRANSISTOR 2.5 GHZ
20-50-200
TRANSISTOR 12 GHZ
RF TRANSISTOR 2.5 GHZ s parameter
ic-110
RF POWER TRANSISTOR NPN vhf
RF NPN POWER TRANSISTOR 3 GHZ
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AT-64023
Abstract: S21E
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for
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AT-64023
AT-64023
5989-2658EN
AV02-1221EN
S21E
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AT-64023
Abstract: S21E 156 51 MA2670
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for
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AT-64023
AT-64023
reliaT-64023
5989-2658EN
AV02-1221EN
S21E
156 51
MA2670
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: ESC D • fl23SbOS 000MS21 7 « S I E G NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF : l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.
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fl23SbOS
000MS21
62702-F542
82-02t"
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002A730
BFS23A
175MHz
00Bfl73t>
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BFS22A
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE bbS3^31 DD5fl7ES Ifl? I IAPX BFS22A J> V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran
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BFS22A
D02fl7ET
BFS22A
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE bTE D • bbSBTai DOBDfibS 0H3 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK637-400B
bb53T31
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery
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BUK637-400B
BUK637-400B
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BSV64
Abstract: 593221
Text: BSV64 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA Collector-base voltage open emitter v CBO max.
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BSV64
7Z60473
BSV64
593221
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transistor c 1974
Abstract: No abstract text available
Text: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.
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001370a
BLW60
0D13720
transistor c 1974
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BFX89
Abstract: case BFX89 transistor IR 652 P
Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.
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bbS3T31
BFX89
7Z08812
7Z08857
7Z08814
T-37-15
7Z08815
BFX89
case BFX89
transistor IR 652 P
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-Y0OA/B
BUK456
-100A
-100B
T0220AB
BUK456-100A/B
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acrian RF POWER TRANSISTOR
Abstract: 3001 transistor ACRIAN K3003 acrian inc AN-3001 transistor m 3003 g
Text: A C R I A N INC t ? deT| oiaa^a DDGm?i o 3001 GENERAL DESCRIPTION The 300.1 is a common base transistor capable of providing 1 watt of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It uses gold metalization and
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0DD1473
0D01474
acrian RF POWER TRANSISTOR
3001 transistor
ACRIAN
K3003
acrian inc
AN-3001
transistor m 3003 g
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Philips FA 564
Abstract: transistor A 564 BUK456-100B
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-100A/B
BUK456
-100A
-100B
T0220AB
Philips FA 564
transistor A 564
BUK456-100B
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