nec 2561
Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
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2SC5337
2SC5337
2SC3356
nec 2561
NEC 2561 transistor
2561 nec
2561 a nec
NEC semiconductor 2561
transistor NEC 2561
P1093
100MHZ
200MHZ
2SC3356
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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NEC 2561
Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.
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2SC5337
2SC5337
2SC3356
NEC 2561
NEC 2561 transistor
2561 nec
transistor NEC 2561
NEC 2561 h
NEC D 809 F
2561 a nec
NEC semiconductor 2561
nec 2561 4 pin
transistor NEC D 586
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE bTE D • bbSBTai DOBDfibS 0H3 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK637-400B
bb53T31
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery
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BUK637-400B
BUK637-400B
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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automotive ignition tip162
Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.
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BU323A
BU323A
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
automotive ignition tip162
BU323A equivalent
2SA1046
BC337 rbe
BU108
TIP102 Darlington transistor
bc337 cross-reference
2SC190
replacement transistor BC337
BU326
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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BU323AP
BU323AP
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
automotive ignition tip162
bc337 cross-reference
BU108
BD390 cross reference
replacement transistor BC337
BUX48A
2SD1815 "cross reference"
TIP102 Darlington transistor
Motorola MJ15022
MJ1000
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transistor c 1974
Abstract: No abstract text available
Text: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.
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001370a
BLW60
0D13720
transistor c 1974
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-Y0OA/B
BUK456
-100A
-100B
T0220AB
BUK456-100A/B
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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Philips FA 564
Abstract: transistor A 564 BUK456-100B
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-100A/B
BUK456
-100A
-100B
T0220AB
Philips FA 564
transistor A 564
BUK456-100B
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transistor A 564
Abstract: two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 dual 2sc2412k NPN Silicon Epitaxial Planar Transistor
Text: Transistors General purpose transistor dual transistors UMX1N / IMX1 FFeatures 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.
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2SC2412K
96-503-C22)
transistor A 564
two 2sc2412k
A 564 transistor
transistor 564
imx1
transistor A 562
imx1 2SC2412K
UMx1
dual 2sc2412k
NPN Silicon Epitaxial Planar Transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
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MJE16204
MJE16204
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
D42C5
transistor bc 647
2N5302 EB
pin out TRANSISTOR tip2955
bs170 replacement
2sc141
BU108
bc 658
Motorola transistors MJE3055 TO 127
MC7812 TO-220
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philips bfq23
Abstract: BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634
Text: Philips Sem iconductors ^ 5 3 ^ 3 1 0 D 3 1 5 13 T7T H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a plastic SOT37 envelope, primarily intended for use in UHF and microwave amplifiers,
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BFQ23
BFR91A.
philips bfq23
BFQ23
BFR91A
the pin function of ic 7423
BFR91A transistor
transistor 9634
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transistor A 564
Abstract: 100-P BUK637-400B
Text: PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control applications, eg. in full bridge configurations for which
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BUK637-400B
BUK637-400B
transistor A 564
100-P
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bu806 REPLACEMENT
Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.
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220AB
BU806
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
bu806 REPLACEMENT
k 3569
BU108
2SD211
BU806
NSP2100
TL MJE2955T
2SC1943
2SC1419
BU326
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transistor A 564
Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1823L5
KST1623L6
KST1623L7
KST1623L3
KST1623L4
KST1623L5
transistor A 564
L6 TRANSISTOR
kst1623
L6 MARKING
transistor L7
transistor marking l6
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D • 711GÖ2b GübM3Gl Sb7 H P H I N Philips Semiconductors Product Specification BUK637-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
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BUK637-400B
711DflSb
0Qb43D5
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BUK474-600B
Abstract: No abstract text available
Text: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 BUK474-600B PowerMOS transistor SbE D PHILIPS INTERNATIONA GENERAL DESCRIPTION N -channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope.
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BUK474-600B
DMML24
OT186A
BUK474-600B
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2SA835
Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.
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MJE9780*
MJE9780
220AB
mAdc/10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
2SA835
transistor D 1557
bu806 equivalent
2SD436
2SD669 equivalent
BU108
TL 188 TRANSISTOR PNP
2Sd525 equivalent
2sa1046
2N6021
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