TRANSISTOR A 7 Search Results

TRANSISTOR A 7 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR A 7 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated	OCR Scan	SQQ300BA60 200ns) hrEfe750	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for	OCR Scan	SQD300AA120 DDD2213	PDF
1G05 Abstract: 2SA1078 2SC2528 Text: FUJITSU SILICON HIGH SPEED POWER TRANSISTOR 2SA 1078 September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET -a G The 2 S A 1 0 7 8 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) technology. R E T devices are	OCR Scan	2SA1078 2SA1078 2SC2528, 10MHz 20VilE 300ms 1G05 2SC2528	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated	OCR Scan	QCA75AA100 E76102 100msec 00V-----IB,	PDF
NTE2076 Abstract: No abstract text available Text: NTE2076 Integrated Circuit 7–Segment Darlington Transistor Array w/Clamp Diode Description: The NTE2076 is constructed with a 7–circuit Darlington Transistor Array by a NPN Transistor and is a semi–conductor integrated circuit IC which can drive large electric current with very small input	Original	NTE2076 NTE2076 150mA) 150mA	PDF
2SA1927 Abstract: 05SV ra-100 Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING	OCR Scan	2SA1927 2SA1927 100mVtyp 270Hz X10-3 05SV ra-100	PDF
88 diode Abstract: NUS2501W6T1 sot-363 Marking LG Text: NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT Bias Resistor Transistor contains a single transistor with a	Original	NUS2501W6 SC-88 NUS2501W6/D 88 diode NUS2501W6T1 sot-363 Marking LG	PDF
Untitled Abstract: No abstract text available Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z90791	PDF
BSD12 Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network	Original	LDTA124EET1 SC-89	PDF
marking P33 transistor Abstract: marking P32 transistor transistor P32 25 marking P34 DTA12 DTA124E LDTA124EET1 SC-89 100 p34 transistor Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network	Original	LDTA124EET1 SC-89 463C-01 463C-02. marking P33 transistor marking P32 transistor transistor P32 25 marking P34 DTA12 DTA124E LDTA124EET1 SC-89 100 p34 transistor	PDF

Untitled Abstract: No abstract text available Text: PZT5672 NPN Transistor Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT5672 is a low frequency transistor. Excellent DC current gain characteristics. REF. A C D E I H 5 6 72 Date Code B C E Millimeter Min.	Original	PZT5672 OT-223 PZT5672 100MHz 01-Jun-2002	PDF
Mitsubishi M54564 Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide	Original	A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p	PDF
transistor sc 308 Abstract: DTC114TE SMD310 Text: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310	PDF
Untitled Abstract: No abstract text available Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to	Original	NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D	PDF
N5 npn transistor Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6 Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to	Original	NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a	OCR Scan	DTC114TE DTC114TE OT-416/SC-90	PDF
transistor BR A 94 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a	OCR Scan	DTC114TE DTC114TE transistor BR A 94	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114YE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a	OCR Scan	DTC114YE OT-416/SC-90 GGT3053	PDF
DUAL TRANSISTOR Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.	Original	OT-363 QW-R218-024 DUAL TRANSISTOR	PDF
transistor A 564 Abstract: S-AV8 2-13B1A 564 transistor S-AU4 Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the	OCR Scan	TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4	PDF

TRANSISTOR A 7 Search Results

TRANSISTOR A 7 Result Highlights (5)

TRANSISTOR A 7 Datasheets Context Search

mcl610

MCT8 opto

Untitled

Untitled

1G05

Untitled

NTE2076

2SA1927

88 diode

Untitled

BSD12

Untitled

Untitled

marking P33 transistor

Untitled

Mitsubishi M54564

transistor sc 308

Untitled

N5 npn transistor

Untitled

transistor BR A 94

Untitled

DUAL TRANSISTOR

transistor A 564