TRANSISTOR A 928 Search Results

TRANSISTOR A 928 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR A 928 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MARKING P2Z Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89 Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to	Original	SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89	PDF
J231 transistor Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z Text: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe	Original	SGA-9289 SGA-9289Z SGA-9289 270mA OT-89 EDS-101498 J231 transistor j392 diode germanium tu 38 f 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z	PDF
SGA-9289 Abstract: j392 J231 transistor SGA-9289Z Text: Preliminary Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor	Original	SGA-9289 OT-89 EDS-101498 j392 J231 transistor SGA-9289Z	PDF
NEC NF 932 Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055 Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride	Original	2SC5009 2SC5009 NEC NF 932 ZO 103 MA 75 623 2SC5009-T1 TD-2430 power transistor 3055	PDF
kf 8715 Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101 Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI	Original	HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E	PDF
BFR92A Abstract: Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR92AR BFR 450 Transistor BFR 30 Text: TELEFUNKEN Semiconductors BFR 92 A / BFR 92 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking Plastic case SOT 23	Original	BFR92A BFR92AR D-74025 Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR 450 Transistor BFR 30	PDF
Transistor BFR 90 application Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93 Text: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23	Original	BFR93A BFR93AR D-74025 Transistor BFR 90 application bfr 93 a Transistor BFR 93 BFR 93 Transistor BFR marking R2 BFR 30 transistor bfr93	PDF
2N2907ADIE Abstract: MICROSEMI 2N2907A ST 2n2907a die 2N2907A 10VDC MSC0948 Text: 2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS	Original	2N2907ADIE MIL-PRF-19500/291 10Vdc, 100kHz< 2N2907ADIE MICROSEMI 2N2907A ST 2n2907a die 2N2907A 10VDC MSC0948	PDF
MICROSEMI 2N2222A Abstract: 2n2222a die 2N2222A JANTXV 10VDC Transistor 2N2222A 2N2222A chip die npn transistor Transistor 2N2222A microsemi Text: 2N2222A DIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR NPN SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS	Original	2N2222A MIL-PRF-19500/255 10Vdc, 100kHz< MICROSEMI 2N2222A 2n2222a die 2N2222A JANTXV 10VDC Transistor 2N2222A chip die npn transistor Transistor 2N2222A microsemi	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount	OCR Scan	BUK583-60A OT223 BUK583-60A	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET_, GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mount	OCR Scan	BUK583-60A OT223 BUK583-60A	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance	OCR Scan	BUK7514-30 T0220AB	PDF
transistor 502 Abstract: transistor BF 502 transistor BF 506 BF502 Text: ESC D • ÔSBSbQS ÛQQ45GS ■SIEG ^ 7^-î/- z * NPN Silicon RF Transistor BF502 SIEMENS AKT IEN GE SE LL SC H AF >4505 0 - \| BF 502 is an NPN silicon planar RF transistor in TO 92 plastic package 1 0 A 3 D I N 4 1 868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF	OCR Scan	62702-F572 100MHz) transistor 502 transistor BF 502 transistor BF 506 BF502	PDF
BFR94 Abstract: BFR94A Text: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross	OCR Scan	BFR94A OT122E BFR94A BFR94. Q031flfl3 BFR94	PDF

IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
Ericsson 20082 Abstract: No abstract text available Text: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion	OCR Scan	Collector-91 Ericsson 20082	PDF
RU901 Abstract: No abstract text available Text: S ~p > y 7> $ /Transistors RU901 R U 9 0 1 J K fîrth7 >'>'^dr Transistor Unit (Composite Transistor) / \ '7 7 ? 7 >~f / Buffer Amplifier • El/Dimensions (Unit : mm) 1) I 5 -y $ 7 n 7\|g\|g&« 2 U S tF m , 2) A 2 K A "7 7 2 1 t- O .S ± O .I lO.SS 0.95	OCR Scan	RU901 SC-74 V/10m 100MHz RU901	PDF
transistor ITT 2907 Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a Text: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz	OCR Scan	HFA3101 HFA3101 10GHz 15dBc 28dBc 22dBc 76MHz 825MHz 50MHz transistor ITT 2907 transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a	OCR Scan	BUK110-50GL isl25	PDF
transistor 8550 Abstract: CL8550 8550 transistor h 8550 pnp transistor Text: CL8550 T 0 -9 2 B oENERAL DESCRIPTION:— The 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE M A X IM U M R A T IN G S „ T O -928 (Note 1) Maximum Temperatures	OCR Scan	CL8550 100mA Boxfe477. transistor 8550 CL8550 8550 transistor h 8550 pnp transistor	PDF
philips carbon film resistor Abstract: blw98 transistor carbon resistor BLW98 Text: N AMER PHILIPS/DISCRETE bTE D □ DS'iSBS ‘ibD BLW98 b b S B 'm IAPX A U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.	OCR Scan	BLW98 bb53131 philips carbon film resistor blw98 transistor carbon resistor BLW98	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.	OCR Scan	BUK102-50GS s/lis25	PDF

TRANSISTOR A 928 Search Results

TRANSISTOR A 928 Result Highlights (5)

TRANSISTOR A 928 Datasheets Context Search

MARKING P2Z

J231 transistor

SGA-9289

NEC NF 932

kf 8715

BFR92A

Transistor BFR 90 application

2N2907ADIE

MICROSEMI 2N2222A

Untitled

Untitled

Untitled

transistor 502

BFR94

IC HXJ 2038

LG color tv Circuit Diagram schematics

1N6227

Ericsson 20082

RU901

transistor ITT 2907

Untitled

transistor 8550

philips carbon film resistor

Untitled