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    TRANSISTOR A11 220 Search Results

    TRANSISTOR A11 220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A11 220 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor A11

    Abstract: transistor A11 220 marking a11 TSC742A A11 MARKING CODE
    Text: TSC742A High Voltage NPN Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 950V IC VCE SAT Features 4A 1.5V @ IC=35A, IB=0.1A Block Diagram ● High Voltage Capability ● High Switching Speed Structure ●


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    TSC742A O-220 TSC742ACZ 50pcs transistor A11 transistor A11 220 marking a11 TSC742A A11 MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9177/A Preliminary Ultra-Low-Noise 200mA/500mA LDO Regulator General Description Features The RT9177/A is a 200mA/500mA low dropout and low noise micro-power regulator suitable for portable RF applications. The output voltage accuracy is within ±2% and range from 2.4V to 3.2V in 100mV increments could


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    RT9177/A 200mA/500mA RT9177/A 100mV protect06 OT-23-5 DS9177/A-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2516 Preliminary 11 VHF/UHF TRANSMITTER Typical Applications • 315/433MHz Band Systems • Remote Keyless Entry • Local Oscillator Source • Wireless Security Systems • Part 15.231 Applications • AM/ASK/OOK Transmitter Product Description The RF2516 is a monolithic integrated circuit intended for


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    RF2516 315/433MHz RF2516 16-pin QSOP-16 433MHz) 433MHz PDF

    HM465642B

    Abstract: DQ420
    Text: HM-65642/883 TM 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


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    HM-65642/883 HM-65642/883 80C86 80C88 100kHz HM465642B DQ420 PDF

    RF2335

    Abstract: rogers 4003 A11 SOT23-5
    Text: RF2335 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2335 is a general purpose, low-cost RF amplifier


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    RF2335 RF2335 6000MHz. 01GHz rogers 4003 A11 SOT23-5 PDF

    8 pin 4435 ic voltage out and in

    Abstract: Regulated Power Supply variable Schematic Diagram RF2377 4435 power ic RF2377-410 RF2377-411 ATT 47 fc515 linear a transistor 4436
    Text: RF2377 PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER Typical Applications • CDMA PCS/Cellular Handsets • W-CDMA Handsets • TDMA PCS/Cellular Handsets Product Description 1.80 1.40 TEXT* The RF2377 is a linear variable gain amplifier suitable for


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    RF2377 RF2377 8 pin 4435 ic voltage out and in Regulated Power Supply variable Schematic Diagram 4435 power ic RF2377-410 RF2377-411 ATT 47 fc515 linear a transistor 4436 PDF

    A11 sot23-5

    Abstract: Sot23 SL6 TRANSISTOR RF2335 transistor A11 220
    Text: RF2335 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2335 is a general purpose, low-cost RF amplifier


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    RF2335 RF2335 6000MHz. 01GHz A11 sot23-5 Sot23 SL6 TRANSISTOR transistor A11 220 PDF

    Regulated Power Supply variable Schematic Diagram

    Abstract: RF2377 RF2377-410 RF2377-411 miniature transistor
    Text: RF2377 4 PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER Typical Applications • CDMA PCS/Cellular Handsets • W-CDMA Handsets • TDMA PCS/Cellular Handsets GENERAL PURPOSE AMPLIFIERS 4 Product Description The RF2377 is a linear variable gain amplifier suitable for


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    RF2377 RF2377 Regulated Power Supply variable Schematic Diagram RF2377-410 RF2377-411 miniature transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2317             • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2317 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an


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    RF2317 RF2317 50MHz 1000MHz, 005GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2919 11 433/868/915MHZ ASK/OOK RECEIVER Typical Applications • Wireless Meter Reading • Remote Data Transfers • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Bands Systems Product Description The RF2919 is a monolithic integrated circuit intended for


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    RF2919 433/868/915MHZ RF2919 32-lead 915MHz 433MHz 868MHz 915MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2045 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment


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    RF2045 RF2045 6000MHz. RF204X PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2045 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment


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    RF2045 RF2045 6000MHz. RF204X PDF

    HM1-65642/883

    Abstract: HM4-65642/883 80C86 80C88 HM65642C intersil eprom
    Text: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM May 2002 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


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    HM-65642/883 MIL-STD883 150ns HM1-65642/883 HM4-65642/883 80C86 80C88 HM65642C intersil eprom PDF

    mosfet ssd

    Abstract: 1BW TRANSISTOR S1531 S1533 S1534 S8658 S8658-01 max1814 sensor x-ray
    Text: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658-01 S8658-01 SE-171 KMPD1078E01 mosfet ssd 1BW TRANSISTOR S1531 S1533 S1534 S8658 max1814 sensor x-ray PDF

    sensor x-ray

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658-01 S8658-01 SE-171 KMPD1078E05 sensor x-ray PDF

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S8658 Front-illuminated FFT-CCD for X-ray imaging S8658 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658 S8658 SE-171 KMPD1065E02 PDF

    kvp c6

    Abstract: dental x-ray sensor 1BW TRANSISTOR ccd KE S1531 S1533 S1534 S8658 S8658-01 image sensor x-ray
    Text: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658-01 S8658-01 SE-171 KMPD1078E05 kvp c6 dental x-ray sensor 1BW TRANSISTOR ccd KE S1531 S1533 S1534 S8658 image sensor x-ray PDF

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658-01 S8658-01 SE-171 KMPD1078E03 PDF

    s4 85a

    Abstract: S1531 S1533 S1534 S8658
    Text: IMAGE SENSOR CCD area image sensor S8658 Front-illuminated FFT-CCD for X-ray imaging S8658 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658 S8658 SE-171 KMPD1065E03 s4 85a S1531 S1533 S1534 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING PIN : Pin VCC1 ®VCC2 ©PO ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted


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    M57774 220-225MHZ, Parame90 PDF

    M57774

    Abstract: transistor zg 220-225MHZ M5777 X4730 rf power transistor h2 Mitsubishi transistor rf final
    Text: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm — II— IHD PIN : Pin : RF INPUT ©VCC1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY ®PO : RF OUTPUT ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °Q unless otherwise noted


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    M57774 220-225MHZ, in--30 M57774 transistor zg 220-225MHZ M5777 X4730 rf power transistor h2 Mitsubishi transistor rf final PDF

    2SK595

    Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


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    DDCH230 T-29-25 T-91-20 SC-43 2SK595 TRANSISTOR IFW transistor BC 552 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2377 MICRO-DEVICES PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA PCS/Cellular Handsets W-CDMA Handsets GENERAL PURPOSE AMPLIFIERS • TDMA PCS/Cellular Handsets P ro d u c t D e s c rip tio n The RF2377 is a linear variable gain amplifier suitable for


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    RF2377 RF2377 -14dBm PDF

    VLN 2003a

    Abstract: bt 2025 2SK595
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b D D C H 230 T“29“25. 2025 .Vafc-.l'^ ,1 T N-Chanrrel Junction Silicon FET Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


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    7tn707b D0CH230 T-29-25 T-91-20 SC-43 VLN 2003a bt 2025 2SK595 PDF