TRANSISTOR A113 Search Results

TRANSISTOR A113 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR A113 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	PDF	AFT27S006N AFT27S006NT1
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	PDF	AFT27S006N AFT27S006NT1
F35V Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V
transistor equivalent table c101 Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR
MRF6V10010 Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10010N MRF6V10010NR4 MRF6V10010 MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101
731 MOSFET Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.	Original	PDF	MMG3002NT1/D MMG3002NT1 MMG3002NT1 731 MOSFET 53368 A113 A114 A115 AN1955 ML200C MMG30XX
TT2274T Abstract: No abstract text available Text: TT2274T Ordering number : ENA1139 SANYO Semiconductors DATA SHEET TT2274T NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • High breakdown voltage VCBO≥1400V . Ultrahigh-speed switching. Wide ASO. Specifications	Original	PDF	TT2274T ENA1139 VCBO1400V) PW300s, cycle10% 25ormation A1139-4/4 TT2274T
N/A9M07 Abstract: No abstract text available Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from	Original	PDF	AFT09MS007N AFT09MS007NT1 N/A9M07
atc100B102J Abstract: atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N MRF6V2010NR1 A113 A114 A115 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	PDF	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 atc100B102J atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N A113 A114 A115 C101
PV smd transistor Abstract: JEDEC htrb bd 142 transistor Text: GeneSiC Semiconductor Reliability Report on 1200 V SiC Junction Transistor SJT Devices Revision 1.1 (Jan. 2014) 1 Table of Contents 1. Report Summary . 3 2. Reliability Test Plan . 3	Original	PDF
M 57733 Abstract: No abstract text available Text: MOTOROLA Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally	Original	PDF	MMG3002NT1/D MMG3002NT1 MMG3002NT1 MMG3002NT1/D M 57733
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally	Original	PDF	MMG3003NT1/D MMG3003NT1 MMG3003NT1 MMG3003NT1/D
Arlon CuClad PCB board material Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	PDF	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 Arlon CuClad PCB board material ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM
014728 Abstract: pcb 85501 MMG3001NT1 Text: MOTOROLA Order this document by MMG3001NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3001NT1 Broadband High Linearity Amplifier The MMG3001NT1 is a General Purpose Amplifier that is internally	Original	PDF	MMG3001NT1/D MMG3001NT1 MMG3001NT1 MMG3001NT1/D 014728 pcb 85501

crcw06031000fkta Abstract: ZENER DIODE t2 CRCW06031200FKTA Chip Resistors Mounting GaAs FET chip HK160822NJ-T A113 CTB112 CRCW06032001FKTA MMG1001NT1 Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology	Original	PDF	MMG1001NT1 DataMMG1001NT1 crcw06031000fkta ZENER DIODE t2 CRCW06031200FKTA Chip Resistors Mounting GaAs FET chip HK160822NJ-T A113 CTB112 CRCW06032001FKTA MMG1001NT1
1.5SMC27AT3G Abstract: No abstract text available Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology	Original	PDF	MMG1001NT1 DataMMG1001NT1 1.5SMC27AT3G
Motorola semiconductor 7036 Abstract: A113 MRFG35010MT1 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35010MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35010MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies	Original	PDF	MRFG35010MT1/D MRFG35010MT1 Motorola semiconductor 7036 A113 MRFG35010MT1
hatching machine Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications	Original	PDF	MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
8772 P Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies	Original	PDF	MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications	Original	PDF	MRF6V2150N MRF6V2150NB
crcw06031000fkta Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112 Text: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology	Original	PDF	MMG1001NT1 crcw06031000fkta CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
Untitled Abstract: No abstract text available Text: Document Number: MRF9060N Rev. 13, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	PDF	MRF9060N MRF9060NR1
01903 Abstract: 74514 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C Text: Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3010NT1 The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,	Original	PDF	MMG3010NT1 MMG3010NT1 01903 74514 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

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TRANSISTOR A113 Search Results

TRANSISTOR A113 Result Highlights (5)

TRANSISTOR A113 Datasheets Context Search

Untitled

Untitled

F35V

transistor equivalent table c101

MRF6V10010

731 MOSFET

TT2274T

N/A9M07

atc100B102J

PV smd transistor

M 57733

Untitled

Arlon CuClad PCB board material

014728

crcw06031000fkta

1.5SMC27AT3G

Motorola semiconductor 7036

hatching machine

8772 P

Untitled

crcw06031000fkta

Untitled

01903

2N2222A 338