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    TRANSISTOR A12 Search Results

    TRANSISTOR A12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sd1441

    Abstract: SD-1441
    Text: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V


    Original     		PDF SD1441 SD1441 SD-1441

    2SC2782

    Abstract: NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V


    Original     		PDF 2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782

    2SC6141

    Abstract: a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams
    Text: 2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications.


    Original     		PDF 2SA2221/2SC6141 ENA1288 AF100W AF100W 2SA2221 A1288-4/4 2SC6141 a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams

    IC 4047

    Abstract: A1210 BTA1210E3
    Text: CYStech Electronics Corp. Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.


    Original     		PDF C656E3 BTA1210E3 BTA1210E3 O-220AB UL94V-0 IC 4047 A1210

    EM7164SU16

    Abstract: No abstract text available
    Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision


    Original     		PDF EM7164SU16 1Mx16 690-7t 100ns 120ns

    A1210

    Abstract: BTA1210FP
    Text: CYStech Electronics Corp. Spec. No. : C656FP Issued Date : 2005.03.29 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.


    Original     		PDF C656FP BTA1210FP BTA1210FP O-220FP UL94V-0 A1210

    A1210

    Abstract: BTA1210J3
    Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210J3 Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.


    Original     		PDF C656J3 BTA1210J3 BTA1210J3 O-252 UL94V-0 A1210

    A1210

    Abstract: BTA1210T3
    Text: CYStech Electronics Corp. Spec. No. : C656T3 Issued Date : 2004.09.01 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.


    Original     		PDF C656T3 BTA1210T3 BTA1210T3 O-126 UL94V-0 A1210

    A1210

    Abstract: No abstract text available
    Text: Spec. No. : C656F3 Issued Date : 2007.02.02 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.


    Original     		PDF C656F3 BTA1210F3 BTA1210F3 O-263 UL94V-0 A1210

    PT10m

    Abstract: A1210 BTA1210J3
    Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low


    Original     		PDF C656J3 BTA1210J3 -120V BTA1210J3 O-252 UL94V-0 PT10m A1210

    Untitled

    Abstract: No abstract text available
    Text: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs


    Original     		PDF CY7C194BN CY7C194BN AN1064,

    10 micro farad capacitor

    Abstract: No abstract text available
    Text: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs


    Original     		PDF CY7C199CN 28-pin 10 micro farad capacitor

    Untitled

    Abstract: No abstract text available
    Text: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs


    Original     		PDF CY7C199CN CY7C199CN 28-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C199CN 256 K 32 K x 8 Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs


    Original     		PDF CY7C199CN CY7C199CN 28-pin 28-pin

    transistor PNP A124

    Abstract: A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001
    Text: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. STA124M Marking Package Code A124


    Original     		PDF STA124M STC128M O-92M KST-I005-000 -100mA -500mA, -50mA transistor PNP A124 A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    1348 transistor

    Abstract: MPS-A12
    Text: Silicon 21 Darlington Transistor M P S-A 12 The General Electric MPS-A12 is a Silicon Planar Epitaxial Passivated NPN Darlington Transistor is designed for preamp­ lifier input applications where high impedance is a requirement. SYMBOL Collector to Emitter


    OCR Scan     		PDF MPS-A12 1348 transistor

    kl2 t1 transistor

    Abstract: No abstract text available
    Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module


    OCR Scan     		PDF 10-2I-- kl2 t1 transistor

    itt 3906

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.


    OCR Scan     		PDF 14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    VLN 2003

    Abstract: BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF BA12004B high current darlington transistor
    Text: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting o f seven circuits o f Darlington transistors.


    OCR Scan     		PDF BA12001B/BA12002/B A12003B/BA12003BF/ BA12004B BA12001B, BA12002, BA12003B, BA12003BF, BA12004B VLN 2003 BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF high current darlington transistor

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module


    OCR Scan     		PDF 10-2I--

    transistor BF 258

    Abstract: No abstract text available
    Text: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 0 2 /B A 1 2 0 0 3 B /B A 1 2 0 0 3 B F / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high


    OCR Scan     		PDF BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA12004B) 500mA, transistor BF 258

    A12004

    Abstract: BA12003 BA12002 BA12004
    Text: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays The B A 1 2001 / B A 1 2 0 0 2 / B A 1 2 0 0 3 / B A 1 2004 are high- voltage, large-current transistor arrays that utilize D arlington transistors. Built-in su rg e a b so rb in g diode,


    OCR Scan     		PDF BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 500mA) BA12002) BA12003) A12004 BA12003 BA12002 BA12004