TRANSISTOR A14 Search Results

TRANSISTOR A14 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR A14 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Transistor A14 Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor Text: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage	Original	MMBTA13LT1/14LT1 100mA 100MHz 40x40x1 300us MMBTA13LT1 MMBTA14LT1 Transistor A14 a14 Transistor a13 marking transistor	PDF
Transistor A14 Abstract: MMBTA14LT1 MMBTA13LT1 Text: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces	Original	MMBTA13/14LT1 100uA 100mA 100MHz 40x40x1 300us MMBTA13LT1 MMBTA14LT1 Transistor A14	PDF
C214A Abstract: 1902 transistor BTNA14A3 Text: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : 2005.11.30 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3.	Original	C214A3 BTNA14A3 BTNA14A3 BTPA64A3. UL94V-0 C214A 1902 transistor	PDF
C214A Abstract: 1902 transistor CYStech Electronics BTNA14A3 Text: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit	Original	C214A3 BTNA14A3 BTNA14A3 BTPA64A3. UL94V-0 C214A 1902 transistor CYStech Electronics	PDF
EM7164SU16 Abstract: No abstract text available Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision	Original	EM7164SU16 1Mx16 690-7t 100ns 120ns	PDF
NPN Bipolar Transistor Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package	Original	KTC3198-O/Y/GR/BL C/10s 195mg S1405004 NPN Bipolar Transistor KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G	PDF
Untitled Abstract: No abstract text available Text: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs	Original	CY7C194BN CY7C194BN AN1064,	PDF
10 micro farad capacitor Abstract: No abstract text available Text: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs	Original	CY7C199CN 28-pin 10 micro farad capacitor	PDF
ARM946 Abstract: A14702EE3V0PL00 CB12 nec asic product letter Text: CB-12 0.15 µm Features >> 0.15 µm drawn, 0.11 µm effective Cobalt Salicide CMOS process >> Three transistor characteristics (low power, standard, high performance) selectable on the same chip >> Up to 8 metal layers CB-12 Cell-based CMOS IC Featuring the selection of three different transistor characteristics on the same chip for achieving	Original	CB-12 CB-12 A14702EE3V0PL00 ARM946 A14702EE3V0PL00 CB12 nec asic product letter	PDF
Untitled Abstract: No abstract text available Text: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs	Original	CY7C199CN CY7C199CN 28-pin	PDF
Untitled Abstract: No abstract text available Text: CY7C199CN 256 K 32 K x 8 Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs	Original	CY7C199CN CY7C199CN 28-pin 28-pin	PDF
c102 TRANSISTOR Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT	Original	94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMX17 2SD1484K 500mA 96-523-D15) F04-C101) c102 TRANSISTOR c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor	PDF
a144* transistor Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT	Original	94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMT17 2SA1036K 500mA 94S-366-A032) 96-427-C022) a144* transistor a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor	PDF
d2493 Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852 Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10	Original	A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. d2493 c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852	PDF

2851 transistor npn Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907 Text: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to	OCR Scan	0S0433Ã CI003L -H053 2851 transistor npn A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907	PDF
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 13 D • 05DM33Ô 00037^ T ■ ALGR T-91-01 PROCESS NJ132 Process NJ132 N-Channel Junction Field-Effect Transistor Process NJ132 is an N-channel junction field-effect transistor designed primarily for high-speed switch ing applications, such as low O N resistance analog	OCR Scan	05DM33Ã T-91-01 NJ132 NJ132 GDD3770	PDF
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high	OCR Scan	D5GM33Ã G0037S7 T-91-01 NJ26L NJ26L -R009	PDF
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC TB D • 05Cm336 00037L.3 T ■ ALGR T -9 1-0 1 PRO CESS NJ35D Process NJ35D Dual N-Channel Junction Field-Effect Transistor Process N J35D is a monolithic dual N-channel junction field-effect transistor designed for use as a differential amplifier. The matching characteristics	OCR Scan	05Cm336 00037L NJ35D QS0433S 0DD37bM	PDF
Untitled Abstract: No abstract text available Text: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.	OCR Scan	DSDM33Ã QQ03771 T-91-01 NJ903 050433fl 0G03772	PDF
Untitled Abstract: No abstract text available Text: ALL E GR O MICROSYSTEMS INC S3 D • □SDMSSfl D0G37L.1 S ■ AL GR T-91-01 PROCESS NJ32 Process NJ32 N-Channel Junction Field-Effect Transistor Process NJ32 is an N-channel junction field-effect transistor designed for use as a general-purpose audio amplifier. It is similar to Process NJ16 in basic	OCR Scan	D0G37L T-91-01	PDF
NJ28D Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process	OCR Scan	T-91-01 NJ28D NJ35D, NJ28D	PDF
Untitled Abstract: No abstract text available Text: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap plications at frequencies of up to 450 MHz.	OCR Scan	05D433Ã 00037SS	PDF
transistor w7 Abstract: PJ99 Text: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99	OCR Scan	00D3775 05D433Ô 0Q0377b KftA-14 transistor w7 PJ99	PDF
metal detector sensor Abstract: color detector sensor A1406 HOA1406-003 Reflective Optical Sensor focused HOA1406-001 Reflective Optical Sensor IR isopropanol sensor Reflective Optical Sensor SD2410 Text: Page 1 of 4 Datasheet - HO A1406-001 Honeywell HOA1406-001 HOA Series Reflective Sensor, transistor output, metal can packaged components Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be available in	OCR Scan	A1406-001 HOA1406-001 HOA1406 HOA1406-0r metal detector sensor color detector sensor A1406 HOA1406-003 Reflective Optical Sensor focused HOA1406-001 Reflective Optical Sensor IR isopropanol sensor Reflective Optical Sensor SD2410	PDF

TRANSISTOR A14 Search Results

TRANSISTOR A14 Result Highlights (5)

TRANSISTOR A14 Datasheets Context Search

Transistor A14

Transistor A14

C214A

C214A

EM7164SU16

NPN Bipolar Transistor

Untitled

10 micro farad capacitor

ARM946

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c102 TRANSISTOR

a144* transistor

d2493

2851 transistor npn

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NJ28D

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transistor w7

metal detector sensor