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    TRANSISTOR A2 Search Results

    TRANSISTOR A2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M63828DP

    Abstract: 16PIN M63828WP 16P4X-A IL500
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500

    M63827DP

    Abstract: M63827WP 16PIN 16P4X-A IL500
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		PDF M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology

    Untitled

    Abstract: No abstract text available
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748

    MLP832

    Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTD4591AM832 MLP832 ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a

    MLP832

    Abstract: ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC
    Text: ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTDB2M832 MLP832 ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC

    pnp npn dual emitter connected

    Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded


    Original     		PDF ZXTD4591AM832 D-81541 pnp npn dual emitter connected ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA

    Untitled

    Abstract: No abstract text available
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA

    transistor smd marking KA

    Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTC6718MC ZXTDB2M832

    "dual TRANSISTORs" pnp npn

    Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
    Text: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTDE4M832 "dual TRANSISTORs" pnp npn dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034

    MLP832

    Abstract: ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1
    Text: ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTDA1M832 MLP832 ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1

    702 TRANSISTOR smd

    Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


    Original     		PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A 702 TRANSISTOR smd transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC

    MUN5111T1

    Abstract: MUN5111T1G MUN5112T1G MUN5113T1G MUN5113T3G MUN5114T1G MUN5115T1G MUN5116T1G
    Text: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias


    Original     		PDF MUN5111T1 SC-70/SOT-323 MUN5111T1/D MUN5111T1G MUN5112T1G MUN5113T1G MUN5113T3G MUN5114T1G MUN5115T1G MUN5116T1G

    MO-203-AA

    Abstract: a 4x transistor land pattern sc70-5 MO-203AA SC70-5 eiaj SC70
    Text: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-5 P5.049 D VIEW C e1 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE INCHES 5 SYMBOL 4 E CL 1 2 CL 3 e E1 b CL 0.20 (0.008) M C C CL A A2 SEATING PLANE A1 -C- PLATING


    Original     		PDF SC70-5) 5M-1994. MO-203AA. MO-203-AA a 4x transistor land pattern sc70-5 MO-203AA SC70-5 eiaj SC70

    sot-343 as

    Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
    Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70


    Original     		PDF MBC13900PP/D MBC13900 MBC13900 sot-343 as a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M motorola sps transistor 3AA2

    eiaj SC70

    Abstract: mo-203aa a 4x transistor
    Text: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-3 0.20 (0.008) M P3.049 VIEW C C 3 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL b INCHES SYMBOL 6 5 4 CL CL E1 E 1 2 3 e e1 D C CL A A2 SEATING PLANE A1 -C- PLATING


    Original     		PDF SC70-3) 5M-1994. MO-203AA. eiaj SC70 mo-203aa a 4x transistor

    IC 4556

    Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
    Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.


    OCR Scan     		PDF a23SbOS 62702-F G--14 IC 4556 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF OD300A40/6Q E76102 SQD300A 400/600V --A40 0Q02B06

    transistor BD 800

    Abstract: transistor BD 110
    Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


    OCR Scan     		PDF A235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 800 transistor BD 110

    Q62702-U112

    Abstract: Q62901-B11-A Q62901-B50 transistor 7g
    Text: Nicht für Neuentwicklung ISIPN-Silizium-Leistungstransistor B U Y 35 BUY 35 ist ein einfachdiffundierter NPN-Silizium-Leistungs-Transistor im Gehäuse 3 A2 DIN 41 872 TO-3 . Der Transistor eignet sich besonders für den Einsatz als Schalter bei höheren Spannungen.


    OCR Scan     		PDF Q62702-U112 Q62901-B11-A Q62901-B50 Q62702-U112 Q62901-B11-A Q62901-B50 transistor 7g

    K1 transistor

    Abstract: pnp vhf transistor
    Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


    OCR Scan     		PDF 523SbQS BF767 Q62702-F553 K1 transistor pnp vhf transistor