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    TRANSISTOR A4Y Search Results

    TRANSISTOR A4Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A4Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A4Y SOT23

    Abstract: transistor a4y
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  * * * *  FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION


    Original     		MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y PDF

    A4Y SOT23

    Abstract: transistor a4y transistor a4g sot113 NF 723
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION


    Original     		MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y transistor a4g sot113 NF 723 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION 


    Original     		MMBT1015 150mA MMBT1815 MMBT1015G-x-AC3-R MMBT1015G-x-AE3-R MMBT1015G-x-AL3-R MMBT1015G-x-AN3-R MMBT1015G-x-AQ3-R OT-113 OT-23 PDF

    MARKING A4 transistor

    Abstract: A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 Lead-free: MMBT1015L Halogen-free: MMBT1015G


    Original     		MMBT1015 150mA MMBT1815 MMBT1015L MMBT1015G MMBT1015-x-AC3-R MMBT1015-x-AE3-R MMBT1015-x-AL3-R MMBT1015-x-AN3-R MMBT1015L-x-AC3-R MARKING A4 transistor A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y PDF

    A4Y MARK SOT-23

    Abstract: MARK A4B A4Y SOT23 HMBT1015 transistor a4y
    Text: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		HE6804 HMBT1015 HMBT1015 OT-23 200oC 183oC 217oC 260oC 245oC A4Y MARK SOT-23 MARK A4B A4Y SOT23 transistor a4y PDF

    transistor a4y

    Abstract: A4Y SOT23 HMBT1015
    Text: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		HE6804 HMBT1015 HMBT1015 OT-23 transistor a4y A4Y SOT23 PDF

    BA2rc

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288118 288M-BIT PD48288118 BA2rc PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288118 288M-BIT PD48288118 PDF

    p144f

    Abstract: TDK EF25 BAP36 PD482
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288118-A 288M-BIT PD48288118-A M8E0904E p144f TDK EF25 BAP36 PD482 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT1015W PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A The MMBT1015W is designed for use in driver stage of AF amplifier and general purpose amplification. L 3 1 Top View V B S 2 G COLLECTOR


    Original     		MMBT1015W OT-323 MMBT1015W -100mA, -10mA 300us, 01-Jun-2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288118 288M-BIT PD48288118 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288118-A 288M-BIT R10DS0157EJ0100 PD48288118-A PDF

    transistor a4y

    Abstract: transistor a4g FMBT1015
    Text: PNP Epitaxial Planar Transistor Data Sheet Mechanical Dimensions FMBT1015 Description .110 .060 3 3 .037 2 2 .115 .037 .016 2 3 1 1 1 .043 .016 .004 Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Collector - Base Voltage VCBO -50 V Emitter - Base Voltage


    Original     		FMBT1015 FMBT1015 transistor a4y transistor a4g PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0300 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0300 PDF

    PD48576109,

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0100 PD48576109, PDF

    BA1 K11

    Abstract: ba1d1a PD48576118FF-E24-DW1-A
    Text: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PD48576109-A PD48576118-A R10DS0064EJ0001 PD48576109-A 864-word PD48576118-A BA1 K11 ba1d1a PD48576118FF-E24-DW1-A PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    FTF4052M

    Abstract: FTF4052 BAS28 BAT74 BG40 03FCG261 transistor a4z A1W diode diode a4W FTF4052C
    Text: IMAGE SENSORS DATA SHEET FTF4052M 22M Full-Frame CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 October 30 DALSA Professional Imaging Preliminary Specification 22M Full-Frame CCD Image Sensor FTF4052M • 36mm x 48 mm optical size


    Original     		FTF4052M 4008H FTF4052M FTF4052 BAS28 BAT74 BG40 03FCG261 transistor a4z A1W diode diode a4W FTF4052C PDF

    FTF7040M

    Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
    Text: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V


    Original     		FTF7040M 7168H 74ACT04 BAS28 BG40 ccd application vns Dalsa PDF

    transistor npn d 2058

    Abstract: FTF2020 FT2020M CG1 HOYA ccd application vns FTF2020M CCD IMAGE Dalsa FT202 pnp transistor 9015
    Text: IMAGE SENSORS DATA SHEET FTF2020M 4M Full Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 April 10 DALSA Professional Imaging Product Specification 4M Full-Frame CCD Image Sensor FTF2020M • Image format 24 x 24 mm • 4M active pixels (2048H x 2048V)


    Original     		FTF2020M 2048H transistor npn d 2058 FTF2020 FT2020M CG1 HOYA ccd application vns FTF2020M CCD IMAGE Dalsa FT202 pnp transistor 9015 PDF