2GM sot-23 transistor
Abstract: a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23
Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN types available MMBTA55/A56 Pb Lead-free MMBTA05/MMBTA06 APPLICATIONS z Ideal for medium NPN amplification and switching.
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MMBTA55/A56
MMBTA05/MMBTA06)
OT-23
MMBTA55
MMBTA56
2GM sot-23 transistor
a56 transistor
2GM H transistor
2GM surface transistor
2GM sot
2gm transistor
transistor A56
MMBTA55
2H SOT23
marking code 2GM SOT 23
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transistor f613
Abstract: transistor bc 567
Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.
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AO4604
AO4604
AO4604L
-AO4604L
16789ABA2CDE9AFDC
transistor f613
transistor bc 567
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a56 transistor smd
Abstract: smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBTA55
CMBTA56
C-120
a56 transistor smd
smd marking A56
transistor SMD 2h
transistor smd A55
a56 transistor smd datasheet
SMD TRANSISTOR MARKING 2h
A56 smd transistor
CMBTA55
CMBTA56
br a55
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a56 transistor smd
Abstract: SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBTA55
CMBTA56
C-120
a56 transistor smd
SMD TRANSISTOR MARKING 2h
transistor SMD 2h
a56 transistor
a56 transistor smd datasheet
marking .A55
transistor A55
smd marking A56
CMBTA55
CMBTA56
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bulk inner box label ST
Abstract: No abstract text available
Text: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N6427
MMBT6427
2N6427
OT-23
MPSA14
bulk inner box label ST
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A56 smd transistor
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H
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OT-23
CMBTA55
CMBTA56
C-120
A56 smd transistor
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a56 transistor
Abstract: No abstract text available
Text: Transistors IC SMD Type PNP General Purpose Transistor PZTA56 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector current DC :IC=500mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power dissipation:PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1
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PZTA56
OT-223
500mA
PZTA06)
-10mA
-100mA
-100mA
100MHz
a56 transistor
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a56 transistor
Abstract: a56 equivalent CA56 SMA56
Text: Cascadable Amplifier 5 to 400 MHz A56/ SMA56 V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES 26 dB MEDIUM OUTPUT LEVEL: +13.5 dBm TYP. HIGH THIRD ORDER I.P. + 27 dBm (TYP.) Description The A56 RF amplifier is a discrete hybrid design, which uses
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SMA56
MIL-STD-883
a56 transistor
a56 equivalent
CA56
SMA56
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a56 transistor
Abstract: CA56 SMA56
Text: A56 / SMA56 Cascadable Amplifier 5 to 400 MHz Rev. V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES 26 dB MEDIUM OUTPUT LEVEL: +13.5 dBm TYP. HIGH THIRD ORDER I.P. + 27 dBm (TYP.) Description The A56 RF amplifier is a discrete hybrid design, which uses
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SMA56
MIL-STD-883
a56 transistor
CA56
SMA56
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a56 transistor
Abstract: CA56 SMA56 transistor A56
Text: A56/SMA56 5 TO 400 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · HIGH GAIN-TWO STAGES 26 dB TYP. · MEDIUM OUTPUT LEVEL +13.5 dBm (TYP.) · HIGH THIRD ORDER I.P. +27 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/02)*
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A56/SMA56
SMA56
a56 transistor
CA56
SMA56
transistor A56
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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CMBTA56
Abstract: a56 transistor CMBTA55
Text: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 o.ar 2.00 0.60
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CMBTA55
CMBTA56
CMBTA56
a56 transistor
CMBTA55
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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Untitled
Abstract: No abstract text available
Text: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02_ 0.89 0.60 0.40
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CMBTA55
CMBTA56
23fi33TH
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: ffl. CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.4S 0.38 -^pT5§ 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.60 0.40
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CMBTA55
CMBTA56
CMBTA55
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Untitled
Abstract: No abstract text available
Text: L CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLIN E DETAILS ALL DIM ENSIONS IN mm M arking CMBTA55 = 2H CMBTA56 = 2G 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 'S] 2.6 " 2.4 I 1.4
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CMBTA55
CMBTA56
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a56 transistor
Abstract: marking as6 CMBTA55 CMBTA56 transistor A56
Text: COIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_ 2.8 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 0.60
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CMBTA55
CMBTA56
CMBTA55
a56 transistor
marking as6
CMBTA56
transistor A56
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gt116
Abstract: a56 transistor
Text: Transistors I PNP General Purpose Transistor SSTA56/MMSTA56/MPSA56 •Features •External dimensions Units : mm 1 } B V ceo < — 4 0 V (Ic ^ — 1m A) SSTA56 2 ) Com plem ents the SS T A 06/M M S T A 0 6/M PS A 06 . •P a ckag e, marking and packaging specifications
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SSTA56/MMSTA56/MPSA56
SSTA56
SSTA56
PSA56
STA56
gt116
a56 transistor
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MPS A56 transistor
Abstract: MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA10 MPSA12 MPSA13 Schlumberger
Text: FAIRCHILD SE MI CO ND UC TO R fi4 . . . 40 V T ' #X P \-'V A IVi^SAiy NPN A m plifier Transistor A Schlum berger C om pany Vceo |g 34^^1,74 D0S73TE -=| y P S A IO F A IR C H IL D dT Min PACKAGE MPSA10 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures
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D0S73TE
MPSA10
E74DE
MPS A56 transistor
MPS 3117
T164
MPS A13 transistor
A42 MPSA42 NPN
FTSOA12
MPSA12
MPSA13
Schlumberger
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Untitled
Abstract: No abstract text available
Text: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250
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BC80S-16
BC80E-25
BC806-40
500mA
100mA
100MHz
100mA
150MHz
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Untitled
Abstract: No abstract text available
Text: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes
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TC518129A
18129AFW-12,
TC518129AFWL-12
TC518129AP/ASP/AF/AFWâ
TC518129APL/ASPL/AFL/AFWLâ
TC518129AFTL/ATRLâ
TSOP32
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a06 transistor
Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
Text: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de signed for medium current general purpose amplifier appli
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MPS-A05,
MPS-A05
MPS-A55
MPS-A06
MPS-A56
IZCS41H1
andMPS-A56.
a06 transistor
transistor 468
TRANSISTOR A06
mpsa065
a06 amplifier
transistor A55
MPSA55 GE
001755
a56 transistor
Transistor B C 468
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