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    TRANSISTOR A56 Search Results

    TRANSISTOR A56 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A56 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2GM sot-23 transistor

    Abstract: a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23
    Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN types available MMBTA55/A56 Pb Lead-free MMBTA05/MMBTA06 APPLICATIONS z Ideal for medium NPN amplification and switching.


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    MMBTA55/A56 MMBTA05/MMBTA06) OT-23 MMBTA55 MMBTA56 2GM sot-23 transistor a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23 PDF

    transistor f613

    Abstract: transistor bc 567
    Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


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    AO4604 AO4604 AO4604L -AO4604L 16789ABA2CDE9AFDC transistor f613 transistor bc 567 PDF

    a56 transistor smd

    Abstract: smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    ISO/TS16949 OT-23 CMBTA55 CMBTA56 C-120 a56 transistor smd smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55 PDF

    a56 transistor smd

    Abstract: SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    OT-23 CMBTA55 CMBTA56 C-120 a56 transistor smd SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56 PDF

    bulk inner box label ST

    Abstract: No abstract text available
    Text: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N6427 MMBT6427 2N6427 OT-23 MPSA14 bulk inner box label ST PDF

    A56 smd transistor

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H


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    OT-23 CMBTA55 CMBTA56 C-120 A56 smd transistor PDF

    a56 transistor

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP General Purpose Transistor PZTA56 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector current DC :IC=500mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power dissipation:PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1


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    PZTA56 OT-223 500mA PZTA06) -10mA -100mA -100mA 100MHz a56 transistor PDF

    a56 transistor

    Abstract: a56 equivalent CA56 SMA56
    Text: Cascadable Amplifier 5 to 400 MHz A56/ SMA56 V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES 26 dB MEDIUM OUTPUT LEVEL: +13.5 dBm TYP. HIGH THIRD ORDER I.P. + 27 dBm (TYP.) Description The A56 RF amplifier is a discrete hybrid design, which uses


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    SMA56 MIL-STD-883 a56 transistor a56 equivalent CA56 SMA56 PDF

    a56 transistor

    Abstract: CA56 SMA56
    Text: A56 / SMA56 Cascadable Amplifier 5 to 400 MHz Rev. V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES 26 dB MEDIUM OUTPUT LEVEL: +13.5 dBm TYP. HIGH THIRD ORDER I.P. + 27 dBm (TYP.) Description The A56 RF amplifier is a discrete hybrid design, which uses


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    SMA56 MIL-STD-883 a56 transistor CA56 SMA56 PDF

    a56 transistor

    Abstract: CA56 SMA56 transistor A56
    Text: A56/SMA56 5 TO 400 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · HIGH GAIN-TWO STAGES 26 dB TYP. · MEDIUM OUTPUT LEVEL +13.5 dBm (TYP.) · HIGH THIRD ORDER I.P. +27 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/02)*


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    A56/SMA56 SMA56 a56 transistor CA56 SMA56 transistor A56 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    CMBTA56

    Abstract: a56 transistor CMBTA55
    Text: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 o.ar 2.00 0.60


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    CMBTA55 CMBTA56 CMBTA56 a56 transistor CMBTA55 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02_ 0.89 0.60 0.40


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    CMBTA55 CMBTA56 23fi33TH PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    Untitled

    Abstract: No abstract text available
    Text: ffl. CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.4S 0.38 -^pT5§ 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.60 0.40


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    CMBTA55 CMBTA56 CMBTA55 PDF

    Untitled

    Abstract: No abstract text available
    Text: L CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLIN E DETAILS ALL DIM ENSIONS IN mm M arking CMBTA55 = 2H CMBTA56 = 2G 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 'S] 2.6 " 2.4 I 1.4


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    CMBTA55 CMBTA56 PDF

    a56 transistor

    Abstract: marking as6 CMBTA55 CMBTA56 transistor A56
    Text: COIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_ 2.8 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 0.60


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    CMBTA55 CMBTA56 CMBTA55 a56 transistor marking as6 CMBTA56 transistor A56 PDF

    gt116

    Abstract: a56 transistor
    Text: Transistors I PNP General Purpose Transistor SSTA56/MMSTA56/MPSA56 •Features •External dimensions Units : mm 1 } B V ceo < — 4 0 V (Ic ^ — 1m A) SSTA56 2 ) Com plem ents the SS T A 06/M M S T A 0 6/M PS A 06 . •P a ckag e, marking and packaging specifications


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    SSTA56/MMSTA56/MPSA56 SSTA56 SSTA56 PSA56 STA56 gt116 a56 transistor PDF

    MPS A56 transistor

    Abstract: MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA10 MPSA12 MPSA13 Schlumberger
    Text: FAIRCHILD SE MI CO ND UC TO R fi4 . . . 40 V T ' #X P \-'V A IVi^SAiy NPN A m plifier Transistor A Schlum berger C om pany Vceo |g 34^^1,74 D0S73TE -=| y P S A IO F A IR C H IL D dT Min PACKAGE MPSA10 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures


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    D0S73TE MPSA10 E74DE MPS A56 transistor MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA12 MPSA13 Schlumberger PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250


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    BC80S-16 BC80E-25 BC806-40 500mA 100mA 100MHz 100mA 150MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes


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    TC518129A 18129AFW-12, TC518129AFWL-12 TC518129AP/ASP/AF/AFWâ TC518129APL/ASPL/AFL/AFWLâ TC518129AFTL/ATRLâ TSOP32 PDF

    a06 transistor

    Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
    Text: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­


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    MPS-A05, MPS-A05 MPS-A55 MPS-A06 MPS-A56 IZCS41H1 andMPS-A56. a06 transistor transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468 PDF