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    TRANSISTOR A6C Search Results

    TRANSISTOR A6C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A6C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING A6C SOT-23

    Abstract: transistor A6A SOT-23 marking a6c sot23 marking A6g sot23 marking A6L MMUN2111LT1 MMUN2111LT3 MMUN2112LT3 MMUN2113LT1 MMUN2114LT1
    Text: MMUN2111LT1 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


    Original     		MMUN2111LT1 OT-23 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MARKING A6C SOT-23 transistor A6A SOT-23 marking a6c sot23 marking A6g sot23 marking A6L MMUN2111LT1 MMUN2111LT3 MMUN2112LT3 MMUN2113LT1 MMUN2114LT1 PDF

    transistor A6A

    Abstract: A6k SURFACE MOUNT transistor a6f MMUN2115 a6j* pnp transistor a6j datasheet transistor A6j MMUN2112 MMUN2113 MMUN2114
    Text: MMUN2111…MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


    Original     		MMUN2111. MMUN2134 OT-23 MMUN2133 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 transistor A6A A6k SURFACE MOUNT transistor a6f MMUN2115 a6j* pnp transistor a6j datasheet transistor A6j MMUN2112 MMUN2113 MMUN2114 PDF

    transistor A6A

    Abstract: transistor a6f a6j* pnp transistor MARKING A6C SOT-23 SOT-23 A6A k 49 transistor code A6J A6k SURFACE MOUNT MMUN2111 MMUN2112
    Text: MMUN2111 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting


    Original     		MMUN2111 OT-23 MMUN2132 MMUN2133 MMUN2134 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 transistor A6A transistor a6f a6j* pnp transistor MARKING A6C SOT-23 SOT-23 A6A k 49 transistor code A6J A6k SURFACE MOUNT MMUN2111 MMUN2112 PDF

    transistor A6A

    Abstract: a6j* pnp transistor transistor a6f A6F SURFACE MOUNT A6k SURFACE MOUNT MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115
    Text: MMUN2111…MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


    Original     		MMUN2111. MMUN2134 OT-23 MMUN2133 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 transistor A6A a6j* pnp transistor transistor a6f A6F SURFACE MOUNT A6k SURFACE MOUNT MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 PDF

    A6k SURFACE MOUNT

    Abstract: transistor A6j MMUN2115 a6j* pnp transistor transistor a6f MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2116
    Text: MMUN2111…MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


    Original     		MMUN2111. MMUN2134 OT-23 MMUN2133 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 A6k SURFACE MOUNT transistor A6j MMUN2115 a6j* pnp transistor transistor a6f MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2116 PDF

    a6j* pnp transistor

    Abstract: marking A6f MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network


    Original     		MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 a6j* pnp transistor marking A6f MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 PDF

    a6j* pnp transistor

    Abstract: transistor A6K transistor A6A transistor a6f 2111LT1 transistor A6A N A6k SURFACE MOUNT marking a6a A6L transistor A6k u
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devtc*» This new series of digital transistors is designed to replace a single device


    OCR Scan     		OT-23 MMUN2111LT1 2114LT1 a6j* pnp transistor transistor A6K transistor A6A transistor a6f 2111LT1 transistor A6A N A6k SURFACE MOUNT marking a6a A6L transistor A6k u PDF

    MOTOROLA DATE CODE MARKING

    Abstract: marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original     		OT-23 MOTOROLA DATE CODE MARKING marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2 PDF

    a6j* pnp transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    OCR Scan     		MMUN2111LT1 OT-23 MMUN2111LT1 MMUN2114LT1 GGT322D a6j* pnp transistor PDF

    A6c transistor

    Abstract: transistor a6c MARKING A6C SOT-23 LDTA144ELT1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		LDTA144ELT1G OT-23 A6c transistor transistor a6c MARKING A6C SOT-23 LDTA144ELT1G PDF

    a6j* pnp transistor

    Abstract: transistor a6f transistor A6A marking a6a marking a6h A6k SURFACE MOUNT marking A6f transistor A6A 5 transistor A6K transistor a6f motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUH2111LT1 S E R IE S PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Device« This new series of digital transistors is designed to replace a single device and its


    OCR Scan     		OT-23 MMUN2111LT1 MMUN2114LT1 a6j* pnp transistor transistor a6f transistor A6A marking a6a marking a6h A6k SURFACE MOUNT marking A6f transistor A6A 5 transistor A6K transistor a6f motorola PDF

    a6j* pnp transistor

    Abstract: MMUN2111T1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1
    Text: MOTOROLA Order this document by MMUN2111LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original     		MMUN2111LT1/D MMUN2111LT1 OT-23 MMUN2111LT1/D* a6j* pnp transistor MMUN2111T1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 PDF

    MMUN2111T1

    Abstract: A6J Main Board a6j* pnp transistor A6F SURFACE MOUNT MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 A6k SURFACE MOUNT MMUN2116LT1
    Text: MOTOROLA Order this document by MMUN2111LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original     		MMUN2111LT1/D MMUN2111LT1 OT-23 MMUN2111LT1/D* MMUN2111T1 A6J Main Board a6j* pnp transistor A6F SURFACE MOUNT MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 A6k SURFACE MOUNT MMUN2116LT1 PDF

    marking 6d

    Abstract: IPD110N12N3 G
    Text: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E


    Original     		IPD110N12N3 IPS110N12N3 8976BF6 marking 6d IPD110N12N3 G PDF

    a6j datasheet

    Abstract: MMUN2111 N MMUN2115 a6j* pnp transistor MMUN2111 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2112
    Text: MMUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 R1 1 BASE 3 R2 1 2 EMITTER 2 SOT-23 Maximum Ratings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value 50


    Original     		MMUN2111 OT-23 OT-23 a6j datasheet MMUN2111 N MMUN2115 a6j* pnp transistor MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2112 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS


    OCR Scan     		7C518129A-LV TC518129A-LV -12LV TC518129AFWL-80LV TC518129AFWL-10LV TC518129AFWL-12LV TC518129APL/AFL/AFWLâ -10LV, PDF

    Untitled

    Abstract: No abstract text available
    Text: S-251001A ►UNDER DEVELOPMENT 1M-bit CMOS static RAM The S-251001A is a 1,048,576-bit CMOS static RAM organized as 128KX8, based on a 6-transistor cell design, and fabricated using Sll’s advanced CMOS process. The S-251001A features low standby current, wide


    OCR Scan     		S-251001A S-251001A 576-bit 128KX8, 32-pin 0D2407 PDF

    UPD434000

    Abstract: CZ-70
    Text: NEC JUPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description The ¿JPD434000 is a 524,288-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with thin-film transistor TFT loads make the


    OCR Scan     		uPD434000 JPD434000 288-word /PD434000 The/jPD43 15/uA JJPD434000 D434000 JUPD434000 CZ-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: S-251000A ►UNDER DEVELOPMENT 1M-bit CMOS static RAM The S-251000A is a 1,048,576-bit CM OS static RAM organized as 1 2 8 K X 8 , based on a 6-transistor cell design, and fabricated using Sll’s advanced CM OS process. The S -251000A features low standby current, wide


    OCR Scan     		S-251000A S-251000A 576-bit -251000A 32-pin 00G24G5 PDF

    marking 6d

    Abstract: IPP147N12N
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )*( K R  - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N PDF

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE PDF

    9926C

    Abstract: IPI037N06L3 s4si IPP037N06L3 G
    Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 76BF6? 766substances. 9926C s4si IPP037N06L3 G PDF

    IPP05CN10N

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N 8976BF6 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		TC518129AFWI-10 TC518129AFWI TC518129AFWI D-121 D-122 D-123 PDF