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    TRANSISTOR AAC Search Results

    TRANSISTOR AAC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AAC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8201NG

    Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4

    8201NG

    Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G

    8204NG

    Abstract: GB8204N NGB8204N NGB8204NT4 NGB8204NT4G
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8204N NGB8204N/D 8204NG GB8204N NGB8204N NGB8204NT4 NGB8204NT4G

    8245NG

    Abstract: No abstract text available
    Text: NGB8245N Ignition IGBT 20 Amp, 450 Volt, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8245N NGB8245N/D 8245NG

    8205NG

    Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D 8205NG NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G

    B8204

    Abstract: NGB8204N NGB8204NT4
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8204N NGB8204N/D B8204 NGB8204N NGB8204NT4

    8204NG

    Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8204N NGB8204N/D 8204NG GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG

    NGD 8205NG

    Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D NGD 8205NG 8205NG NGD8205N NGD8205NT4 NGD8205NT4G

    0005P

    Abstract: 350VVGE
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8204N NGB8204N/D 0005P 350VVGE

    8205N

    Abstract: 8205 NGD8205N NGD8205NT4 0000001D
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D 8205N 8205 NGD8205N NGD8205NT4 0000001D

    G18N40B

    Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40
    Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD18N40CLBT4 NGD18N40CLB/D G18N40B N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40

    8201N

    Abstract: NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4

    Untitled

    Abstract: No abstract text available
    Text: NGP8203N Ignition IGBT 20 A, 400 V, N−Channel TO−220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGP8203N NGP8203N/D

    Untitled

    Abstract: No abstract text available
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D

    NGB8202NT4G

    Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D NGB8202NT4G NGB8202AN NGB8202ANT4G NGB8202N NGB8202A

    18n40b

    Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
    Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB18N40CLBT4 NGB18N40CLB/D 18n40b GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D

    8201N

    Abstract: NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    jedec Package TO-39

    Abstract: TRANSISTOR 545 buy49s
    Text: rZ 7 S G S -T H O M S O N RitlO [^©gLlig?i@MB01_ BUY49S SILICON NPN TRANSISTOR . • . ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION


    OCR Scan     		PDF BUY49S jedec Package TO-39 TRANSISTOR 545

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    BF 145 transistor

    Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor
    Text: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance


    OCR Scan     		PDF T0119 Q62702-F612 BF 145 transistor transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor

    BUV26

    Abstract: No abstract text available
    Text: S G S -T H O M S O N BUV26 NPN FAST SWITCHING TRANSISTOR • LOW SATURATION VOLTAGE ■ FAST TURN-ON AND TURN-OFF ■ BASE DRIVE SPECIFIED FOR DIFFERENT VALUES O F lc ■ W IDE SURGE AREA D E S C R IP T IO N High speed transistor suited for low voltage applica­


    OCR Scan     		PDF BUV26 BUV26