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    TRANSISTOR ALG 24 Search Results

    TRANSISTOR ALG 24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ALG 24 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    KTC3875

    Abstract: ALG Transistor MARKING
    Text: KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    High hFE Low noise Complementary to KTA1504 A L 3 3 C B Top View 1 1 CLASSIFICATION OF hFE


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    KTC3875 OT-23 KTA1504 KTC3875-Y KTC3875-GR 100mA, 22-Feb-2013 KTC3875 ALG Transistor MARKING PDF

    equivalent sb5100

    Abstract: EE25 transformer t1 EE25 core PKS605PN 1N4007 equivalent ALG TRANSISTOR diode FR107 equivalent t1 ee25 EE25 bobbin PC817A
    Text: DI-151 Design Idea PeakSwitch Audio Amplifier Power Supply Application Device Power Output Input Voltage Output Voltage Topology Audio PKS605PN 24 W, 36 W peak 90 – 265 VAC 12 V Flyback Design Highlights • Universal input voltage range • Efficiency meets CEC/ENERGY STAR requirements for 2008


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    DI-151 PKS605PN CISPR-22/EN55022 DI-151 equivalent sb5100 EE25 transformer t1 EE25 core PKS605PN 1N4007 equivalent ALG TRANSISTOR diode FR107 equivalent t1 ee25 EE25 bobbin PC817A PDF

    aly smd

    Abstract: transistor smd ALG
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    KTC3875 OT-23 100mA, aly smd transistor smd ALG PDF

    transistor smd ALG

    Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    KTC3875 OT-23 100mA, transistor smd ALG ALY SMD smd transistor marking KTC3875 transistor smd aly 10 PDF

    PR14X8

    Abstract: transistor smd ALG DPA424 DPA424G lm431 smd UV 471 DER-43 EN55022B LM431 transistor tip 3005
    Text: Design Example Report Title 24.5W Power Supply using DPA424G Specification Input: -40 VDC Output: -28V / 480mA, -65 V / 170mA Application Telecom Line Card Author Power Integrations Applications Department Document Number DER-43 Date November 18, 2004 Revision


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    DPA424G 480mA, 170mA DER-43 PR14X8 transistor smd ALG DPA424 DPA424G lm431 smd UV 471 DER-43 EN55022B LM431 transistor tip 3005 PDF

    ALY Transistor MARKING

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components KTC3875-Y KTC3875-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • High hFE and Low Noise Complementary to KTA1504 Lead Free Finish/Rohs Compliant "P"Suffix designates


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    KTC3875-Y KTC3875-GR KTA1504 OT-23 ALY Transistor MARKING PDF

    EER28

    Abstract: 1N4007 ZENER DIODE 1N4007 equivalent bav21 equivalent diode POWER INTEGRATIONS dual flyback converter EER28 BOBBIN ALG TRANSISTOR 12 pin transformer eer28 PKS607YN Diode 1N4007 transistor
    Text: DI-149 Design Idea PeakSwitch Audio Amplifier Power Supply Application Device Power Output Input Voltage Output Voltage Topology Audio PKS607YN 70 W, 126 W peak 90 – 132 VAC, 180 – 265 VAC 32 V Flyback Design Highlights • Delivers high peak power without amplifier distortion


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    DI-149 PKS607YN CISPR-22/EN55022 DI-149 EER28 1N4007 ZENER DIODE 1N4007 equivalent bav21 equivalent diode POWER INTEGRATIONS dual flyback converter EER28 BOBBIN ALG TRANSISTOR 12 pin transformer eer28 PKS607YN Diode 1N4007 transistor PDF

    U2479B

    Abstract: No abstract text available
    Text: 4 ME J> El flTEGCHb OOlQVTb ? S A L GG TELEFUNKEN ELECTRONIC U 2479 B •U 2480 B — AUTOM OTIVE LA M P M ONITOR Technolog y: B ipo lar A p p lica tio n : ' • The circuit permits individual monitoring of 9 lamps U 2 4 7 9 B or 11 lam ps (U 2 4 8 0 B) in automobiles.


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    OK115 U2479B PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 * 7 1 SCS-THOMSON TE A 2031A HD g ®[E[L[lOT(Q EOö i COLOR TV EAST-WEST CORRECTION • BUILD IN FRAME PARABOLA FROM EXTER­ NAL SAW-TOOTH ■ PARABOLA CORRECTION ADJUSTMENT ■ KEYSTONE CORRECTION ADJUSTMENT ■ LINE SIZE ADJUSTMENT ■ LINE DYNAMIC CORRECTION POSSIBILITY


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    TEA2031A 250mA) TEA2031A D5fl45ti PDF

    TOP258MN

    Abstract: DIODE 1N4007 Functions equivalent for TOP258MN top258 ic top258mn ic printer inkjet inkjet printer circuit 1N4007 operating frequency topswitch-hx diode zener 1n4007
    Text: DI-143 Design Idea TOPSwitch-HX High Efficiency Inkjet Power Supply Provides up to 80 Watts of Peak Power Application Device Power Output Input Voltage Output Voltage Topology Inkjet Printer TOP258MN 20 W cont, 80 W pk 90 – 264 VAC 32 V Flyback Design Highlights


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    DI-143 OP258MN DI-143 TOP258MN DIODE 1N4007 Functions equivalent for TOP258MN top258 ic top258mn ic printer inkjet inkjet printer circuit 1N4007 operating frequency topswitch-hx diode zener 1n4007 PDF

    LNK363PN

    Abstract: EE13 NC-2H core SB240 equivalent EE13 NC-2H sb240 diode core EE13 transformer sb240 replacement DI-179 LNK363 2n3906 TRANSISTOR REPLACEMENT
    Text: DI-179 Design Idea LinkSwitch-XT 2.7 W, Dual Output, Non-isolated Power Supply with High Ambient Temperature Operation Application Device Power Output Input Voltage Output Voltage Topology White Goods LNK363PN 2.7 W, 4.15 W pk 185 – 265 VAC 7 V, -5 V


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    DI-179 LNK363PN 135ion DI-179 LNK363PN EE13 NC-2H core SB240 equivalent EE13 NC-2H sb240 diode core EE13 transformer sb240 replacement LNK363 2n3906 TRANSISTOR REPLACEMENT PDF

    TOP265EN

    Abstract: TOP264EN TOP264EG TOp-264EG TOP265EG NC-2H Nicera P-1031 nichicon capacitor optocoupler pc 817 top265
    Text: Design Example Report Title High Efficiency 20 W Power Supply Using TOPSwitch -JX TOP264EG Specification 110 VDC – 400 VDC Input; 5 V, 4 A Output Application PC Standby Supply Author Applications Engineering Department Document Number DER-247 Date February 11, 2010


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    OP264EG DER-247 TOP265EN TOP264EN TOP264EG TOp-264EG TOP265EG NC-2H Nicera P-1031 nichicon capacitor optocoupler pc 817 top265 PDF

    ALG TRANSISTOR

    Abstract: AACD AACG AACE TRANSISTOR ALG 24 MAX1589AEZT MAX1589A MAX1589AETT T633-2 tdFN PACKAGE thermal resistance
    Text: 19-3664; Rev 0; 4/05 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589A low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is


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    500mA MAX1589A 175mV per10 T1433-2 ALG TRANSISTOR AACD AACG AACE TRANSISTOR ALG 24 MAX1589AEZT MAX1589AETT T633-2 tdFN PACKAGE thermal resistance PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-3664; Rev 0; 4/05 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589A low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is


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    500mA MAX1589A 175mV T1433-2 PDF

    ECG967

    Abstract: ECG969 TRANSISTOR ALG 24 ECG961 ecg971 ECG959 ECG963 EC09
    Text: PHI L I PS E C G INC 17E bf c, 53TSf l QQD443S b i ECG Semiconductors ECG959, ECG961, ECG963, ECG965, ECG967, ECG969, ECG971 Three-Terminal Negative Fixed Voltage Regulators Features • No external components required • Internal thermal overload protection


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    53TSf QQD443S ECG959, ECG961, ECG963, ECG965, ECG961 ECG965 ECG967 ECG969 TRANSISTOR ALG 24 ECG961 ecg971 ECG959 ECG963 EC09 PDF

    2n4390

    Abstract: MC7BT05
    Text: MC78T00 Series MOTOROLA SEMICONDUCTOR TECHNICAL DATA Three-Ampere Positive Voltage Regulators This fam ily of fixed voltage regulators are monolithic integrated circuits capable of driving loads in excess of 3.0 A. These three-term inal regulators em ploy internal current limiting, thermal shutdown, and safe-area


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    MC78T00 2N4398 2n4390 MC7BT05 PDF

    SLRS007B

    Abstract: SGSL293
    Text: SN754410 QUADRUPLE HALF-H DRIVER I SLRS007B - NOVEMBER 1986 - REVISED NOVEMBER 1995 1-A Output-Current Capability Per Driver Applications Include Half-H and Full-H Solenoid Drivers and Motor Drivers Designed for Positive-Supply Applications Wide Supply-Vottage Range of 4.5 V to 36 V


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    SN754410 SGSL293 SLRS007B PDF

    ALQQ

    Abstract: 369A-13 AN569 MTD15N06VL SG59 J50 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MTD15N06VUD DATA E DesignerkTMData Sheet — TMOS VTM Power Field Effect Wansistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETS. This


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    MTD15N06VUD 602-2W609 ALQQ 369A-13 AN569 MTD15N06VL SG59 J50 mosfet PDF

    transistor smd ALG

    Abstract: r23 transistor HM79-10100LFTR7 transistor smd ALG 33 HICAL HM00-A5861LF PoE adapter circuit diagrams SMD ZENER DIODE u6 transistor smd ALG c1 SIL6029
    Text: Engineering Prototype Report for EP-86 – 6.6 W Multi-Class Powered Device PD for Power over Ethernet (PoE) Using DPA-Switch (DPA423G) Title Specification Input: 33-57 VDC, Output: 3.3 V / 2.0 A Application PoE Class 2 PD – Including IEEE802.3af Compliant Interface Circuit


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    EP-86 DPA423G) IEEE802 EPR-86 transistor smd ALG r23 transistor HM79-10100LFTR7 transistor smd ALG 33 HICAL HM00-A5861LF PoE adapter circuit diagrams SMD ZENER DIODE u6 transistor smd ALG c1 SIL6029 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH0045/LH0045C National Semiconductor LH0045/LH0045C Two Wire Transmitter General Description The LH0045/LH0045C Two Wire Transmitters are linear in­ tegrated circuits designed to convert the voltage from a sen­ sor to a current, and send it through to a receiver, utilizing


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    LH0045/LH0045C LH0045/LH0045C LH0045 LH0045C LH0045/ 100ft PDF

    ECG960

    Abstract: ECG966 ECG964 ECG219 ECG972 ZK100 ECG962
    Text: 17E 0 PHILIPS E C G INC ECG • bbSBTEfl 000M427 7 ECG958, ECG960, ECG962, ECG964, ECG966, ECG968, ECG972 Three-Terminal Positive Fixed V o ltage R egulators Sem iconductors Features • O utput current In excess o f 1 amp • No external components required


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    000M427 T--58--11--13 ECG960 ECG960 ECG958 ECG962, ECG964 ECG966, ECG968, ECG966 ECG219 ECG972 ZK100 ECG962 PDF

    MI1600

    Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl
    Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s


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    MMDF4P03HDID MMDF4P03HD MMDF4P03HDm MI1600 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl PDF