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    TRANSISTOR APPLICATIONS HF 12 V 150 WATT Search Results

    TRANSISTOR APPLICATIONS HF 12 V 150 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR APPLICATIONS HF 12 V 150 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


    Original     		PDF NTE236 27MHz, O220AB NTE236 O220AB 27MHz

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    D260-4118-0000

    Abstract: 0119A 0190A
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • 30 MHz 28 VOLTS POUT = 130 WATTS GP = 12 dB MINIMUM IMD -30 dB GOLD METALLIZATION


    Original     		PDF MS1078 MS1078

    erf7530

    Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
    Text: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS


    Original     		PDF ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


    OCR Scan     		PDF TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR

    10205 transistor

    Abstract: JF18004
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS


    OCR Scan     		PDF MJE/MJF18004 O-220 MJF18004, AN1040. 10205 transistor JF18004

    JE180

    Abstract: transistor 3707 switching transistor JF18002 3704 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE18002* M JF18002* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications "Motorola Preferred Dovtc« POW ER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS


    OCR Scan     		PDF MJE/MJF18002 MJF18002, AN1040. JE180 transistor 3707 switching transistor JF18002 3704 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in


    OCR Scan     		PDF BUH50/D BUH50 21A-06 O-220AB

    TRIMMER capacitor 5-60 pF

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and


    OCR Scan     		PDF R35-3 TRIMMER capacitor 5-60 pF

    30175 CW

    Abstract: No abstract text available
    Text: Afa MOSFET Power Transistor DU 1230V Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization


    OCR Scan     		PDF

    2SC2166

    Abstract: 2SC2166 equivalent transistor 2sC2166 2sc2166 transistor T30 transistor 2SC2166+equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. • • • • 03.6 9.1 ± 0 .7


    OCR Scan     		PDF 2SC2166 2SC2166 27MHz O-220 2SC2166 equivalent transistor 2sC2166 2sc2166 transistor T30 transistor 2SC2166+equivalent

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF Curre195 G-200, BCP56 BAV99

    S100 transistor

    Abstract: T30 transistor
    Text: M O S FET P o w e r Transistor Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization


    OCR Scan     		PDF 5b42205 S100 transistor T30 transistor

    2SC2166

    Abstract: 2sc2166 transistor transistor 2sC2166 RF POWER TRANSISTOR NPN T-30 transistor npn 12V 1A Collector Current
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in HF band mobile radio applications. • 03.6 ± 0.2 9.1 ± 0 . 7 FEATURES


    OCR Scan     		PDF 2SC2166 27MHz T0-220 2sc2166 transistor transistor 2sC2166 RF POWER TRANSISTOR NPN T-30 transistor npn 12V 1A Collector Current

    2sc1969

    Abstract: 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions in mm


    OCR Scan     		PDF 2SC1969 2SC1969 27MHz O-220 27MHz. 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .


    OCR Scan     		PDF BUD44D2 St254 MTP8P10 500nH

    2SC1969

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'


    OCR Scan     		PDF 2SC1969 2SC1969 27MHz O-220 27MHz. 150mA

    2SC1945

    Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2


    OCR Scan     		PDF 2SC1945 27MHz O-220 27MHz. T-30E TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945

    BUV20

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


    OCR Scan     		PDF BUV20/D BUV20 BUV20

    L147F

    Abstract: mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U M 47* BUL147F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications *Moton>la Pr*f«rr*d D *vic* POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state-of-the-art die designed


    OCR Scan     		PDF BUL147/BUL147F O-220 O-220 BUL147F, 22mperature L147F mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450

    2N649

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N 6498* High Voltage NPN Silicon Power Transistors ‘ Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, sw itching regulators and lin e -o p e ra te d


    OCR Scan     		PDF 2N6497/D 2N6497 2N6498 2N6498 2N6497 21A-06 O-220AB 2N649

    2sc2166

    Abstract: 2SC2166 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES


    OCR Scan     		PDF 2SC2166 2SC2166 2SC2166 equivalent

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON $ PTF 10022 65 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10022 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1,0 GHz. Its push-pull configuration allows for simpler broadband matching. It is rated


    OCR Scan     		PDF