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    TRANSISTOR ARRAY HBDM60V600W COMPLEX Search Results

    TRANSISTOR ARRAY HBDM60V600W COMPLEX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ARRAY HBDM60V600W COMPLEX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    case 202 transistor pinouts

    Abstract: hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1


    Original     		HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D DS30701 case 202 transistor pinouts hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D mbta06 PDF

    Untitled

    Abstract: No abstract text available
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N


    Original     		HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D MIL-STD-202, DS30701 PDF

    9V-12V DC INPUT

    Abstract: IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W NEW PROD PR OD UCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06 PDF

    9V-12V DC INPUT

    Abstract: sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01
    Text: HBDM60V600W Lead-free Green NEW PRODUCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01 PDF