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    TRANSISTOR ATF Search Results

    TRANSISTOR ATF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ATF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


    Original     		ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet PDF

    BLW80

    Abstract: transistor D 2578 transistor rf m 1104
    Text: , iJna. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


    Original     		BLW80 BLW80 transistor D 2578 transistor rf m 1104 PDF

    BLV97CE

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


    Original     		BLV97CE OT171 MDA443 OT171A BLV97CE PDF

    Untitled

    Abstract: No abstract text available
    Text: Gallium Arsenide Field Effect Transistors Characteristics The Gallium Arsenide field effect transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide. This


    Original     		noiseTF-34xxx: ATF-36xxx: ATF-44xxx: ATF-45xxx: ATF-46xxx: PDF

    fet ft 20 GHZ

    Abstract: transistor atf ATF-36xxx high power FET transistor s-parameters
    Text: Gallium Arsenide␣ Field Effect Transistors Characteristics The Gallium Arsenide field effect transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide. This


    Original     		ATF-45xxx: ATF-21xxx: ATF-25xx: ATF-44xxx: ATF-46xxx: fet ft 20 GHZ transistor atf ATF-36xxx high power FET transistor s-parameters PDF

    BLW85

    Abstract: No abstract text available
    Text: ^£m.L-Cona\j.ctoi LPiodueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and


    Original     		BLW85 OT123A BLW85 PDF

    Untitled

    Abstract: No abstract text available
    Text: <£s.m.i- 2onau,ctoi \Pioaucti, Una. TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f.


    Original     		BLV20 18-J20 OT123A PDF

    BLW96

    Abstract: No abstract text available
    Text: ].£.I±£.L ^zml-t-onauckoi iJ^iodueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		BLW96 OT121B BLW96 PDF

    GaAs FET operating junction temperature

    Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .


    Original     		ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2 PDF

    ATF-36077

    Abstract: ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma
    Text: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­ morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package.


    Original     		ATF-36077 ATF-36077 5965-8726E AV02-1222EN ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma PDF

    agilent pHEMT transistor

    Abstract: M2031 ATF-36077 Die Model TRANSISTOR A114 transistor D 2394 36077 ATF-36077 M2003
    Text: Agilent ATF-36077 PHEMT FET Reliability Data Sheet Description The devices referenced on this data sheet are made using the Agilent Technology Pseudomorphic High Electron Mobility Transistor PHEMT process. Life Tests The following cumulative test results have been obtained by


    Original     		ATF-36077 MIL-STD-202, 94-V0. 5988-8619EN agilent pHEMT transistor M2031 ATF-36077 Die Model TRANSISTOR A114 transistor D 2394 36077 ATF-36077 M2003 PDF

    circuit diagram of hearing aid using transistors

    Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter ATF54143 circuit diagram of digital hearing aid AN1222 IMT-2000 JP503
    Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a


    Original     		ATF-54143 MTT-28, ATF54143 5988-5688EN circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid AN1222 IMT-2000 JP503 PDF

    ATF-13736

    Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
    Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective


    Original     		ATF-13736 ATF-13736 5965-8722E 5967-5771E DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736 PDF

    Toko inductor 20211

    Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
    Text: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent


    Original     		ATF-21186 ATF-21186, 5962-6875E Toko inductor 20211 AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686 PDF

    GHZ micro-X ceramic Package

    Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original     		ATF-10736 ATF-10736 5965-8698E GHZ micro-X ceramic Package ATF-10736-STR ATF-10736-TR1 10736 PDF

    ATF-54143 application notes

    Abstract: ATF54143.s2p ATF-54143 atf54143 pHEMT Curtice AN1222 ATF54143 BCV62B agilent pHEMT transistor agilent ads
    Text: A 802.11a WLAN Driver Amplifier using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor Application Note 1286 Introduction Device Selection The driver amplifiers described in this application note are for use in applications covering 5.0 GHz to 5.8 GHz. This frequency range


    Original     		ATF-54143 5988-5845EN ECEN4228 ATF-54143 ATF-54143 application notes ATF54143.s2p atf54143 pHEMT Curtice AN1222 ATF54143 BCV62B agilent pHEMT transistor agilent ads PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features


    OCR Scan     		D03TD32 BLV38 PDF

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


    OCR Scan     		BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143 PDF

    BUK481-60A

    Abstract: F6 sot223
    Text: b^E J> N AUER PHILIPS/DISCRETE • bbS3T31 DG3G71S bl7 BiAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		003G715 BUK481-60A OT223 D3D72D OT223. BUK481-60A F6 sot223 PDF

    F18002

    Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS


    OCR Scan     		MJE/MJF18002 O-220 O-220 MJF18002, 15to20 AN1040. F18002 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002 PDF

    Untitled

    Abstract: No abstract text available
    Text: Gallium A rsenide Field Effect T ransistors The Gallium Arsenide field effect transistor is a semicon­ ductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide.


    OCR Scan     		ATF-44xxx: ATF-45xxx: ATF-46xxx: PDF

    BD807

    Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
    Text: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.


    OCR Scan     		G0fi47til BD805 BD809 BD806 BD807 Temperatu03 AN-415) transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 adc 809 PDF

    kl2 t1 transistor

    Abstract: FZ 300 R 06 KL
    Text: FZ 300 R 06 KL Transistor Transistor Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,1 R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 300 A R th C K V c es pro Baustein / per module


    OCR Scan     		34035S7 kl2 t1 transistor FZ 300 R 06 KL PDF