La 7676
Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES
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2SB1475
2SB1475
IEI-1209)
La 7676
La 7676 data sheet
marking b42
TC-2353
transistor B42
B44 transistor
marking B44
marking B43 TRANSISTOR
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UPA509TA
Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor
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PA509TA
SC-74A
UPA509TA
uPA50
MARKING UV
N-Channel Silicon Junction Field Effect Transistor
uPA509
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M28S
Abstract: M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio output driver amplifier * General purpose switch
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M28SL
M28SG
M28SL-x-AE3-R
M28SL-x-T92-B
M28S-x-AE3-R
M28S-x-T92-B
M28S-x-T92-K
M28SL-x-T92-K
M28SG-x-AE3-R
M28S
M28SL
M28S Equivalent
Transistor Audio Amplifier Application Note
M28SL TO-92
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M28S
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch
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M28SL-x-AE3-R
M28SL-x-T92-B
M28S-x-AE3-R
M28S-x-T92-B
M28S-x-T92-K
M28SL-x-T92-K
M28SG-x-AE3-R
M28SG-x-T92-B
M28SG-x-T92-K
M28S
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch
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M28SL-x-AE3-R
M28SL-x-T92-B
M28SL-x-T92-K
M28SG-x-AE3-R
M28SG-x-T92-B
M28SG-x-T92-K
QW-R201-015
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M28S
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch
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M28S-x-AE3-R
M28S-x-T92-B
M28S-x-T92-K
M28S-x-T92-R
M28SL-x-AE3-R
M28SL-x-T92-B
M28SL-x-T92-K
M28SL-x-T92-R
M28SG-x-AE3-R
M28S
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M28S
Abstract: transistor m28s
Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch
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M28S-x-AE3-R
M28S-x-T92-B
M28S-x-T92-K
M28S-x-T92-R
M28SL-x-AE3-R
M28SL-x-T92-B
M28SL-x-T92-K
M28SL-x-T92-R
M28SG-x-AE3-R
M28S
transistor m28s
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M28S
Abstract: transistor m28s
Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE
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600mA
QW-R201-015
M28S
transistor m28s
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transistor m28s
Abstract: No abstract text available
Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE
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QW-R201-015
transistor m28s
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2SA562TM
Abstract: 2SC1959
Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.
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2SA562TM
2SC1959.
2SA562TM
2SC1959
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTD1047B. ・Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING
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KTD1047B.
KTB817B
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC5197 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Recommended for 55W Audio Frequency Amplifier Output Stage. ・Complementary to KTA1940. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING
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KTC5197
KTA1940.
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ULN3718M
Abstract: power transistor audio amplifier 500 watts ULN3718 allegro radio 500 uf 1000 watts audio amplifier
Text: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Data Sheet 27117.25 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other
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ULN3718M
MA-001-8A
power transistor audio amplifier 500 watts
ULN3718
allegro radio
500 uf
1000 watts audio amplifier
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GP-009
Abstract: ULN3718M
Text: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other battery-operated equipment. The low-power audio amplifier’s wide
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ULN3718M
GP-009
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HN1B04F
Abstract: No abstract text available
Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity
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HN1B04F
-400mA
400mA
HN1B04F
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HN4B04J
Abstract: No abstract text available
Text: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity
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HN4B04J
-400mA
400mA
HN4B04J
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Untitled
Abstract: No abstract text available
Text: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity
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HN4B04J
400mA
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KTB2955
Abstract: KTD3055
Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD3055 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB2955. • Recommended for 30W —35W Audio Frequency Amplifier output Stage. MILLIMETERS
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KTD3055
KTB2955.
220AB
100mS
KTB2955
KTD3055
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Untitled
Abstract: No abstract text available
Text: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity
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HN4B04J
-400mA
400mA
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Untitled
Abstract: No abstract text available
Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity
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HN1B04F
400mA
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HN1B04F
Abstract: No abstract text available
Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity
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HN1B04F
-400mA
400mA
HN1B04F
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2SB1115
Abstract: 2SC1615 2SD1615 2SD1615A
Text: DATA SHEET SILICON TRANSISTOR 2SD1615, 1615A NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SD1615,
2SB1115,
2SB1115
2SC1615
2SD1615
2SD1615A
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TIP33C
Abstract: TIP34C
Text: SEMICONDUCTOR TECHNICAL DATA TIP34C EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP33C. • Recommended for 45W —50W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT
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TIP34C
TIP33C.
TIP33C
TIP34C
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KTB2955
Abstract: KTD3055 0,01 k 400mk
Text: SEMICONDUCTOR TECHNICAL DATA KTB2955 TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTD3055. • Recommended for 30W —35W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT
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KTB2955
KTD3055.
220AB
100msi&
500ms5K;
KTB2955
KTD3055
0,01 k 400mk
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